gbu8kd ... GBU8KG gbu8kd ... GBU8KG protectifiers ? C lowv f bridge rectifier with overvoltage protection protectifiers ? C lowv f -brckengleichrichter mit berspannungsschutz version 2011-08-25 dimensions - ma?e [mm] nominal current nennstrom 8 a alternating input voltage eingangswechselspannung 140 v, 280 v plastic case kunststoffgeh?use 20.8 x 3.3 x 18 [mm] weight approx. C gewicht ca. 7 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging bulk standard lieferform lose im karton features vorteile low v f for reduced power losses high inrush surge capability i fsm reverse overvoltage protection p ppm ul recognized product C file e175067 niedriges v f fr reduzierte verluste hoher einschalt-stromsto? i fsm sperrseitiger berspannungsschutz p ppm ul-anerkanntes produkt C file nr. e175067 maximum ratings and charactistics (t j = 25c) grenz- und kennwerte (t j = 25c) type typ alternating input voltage eingangswechselspannung max. rev. current max. sperrstrom 1 ) breakdown voltage abbruch-spannung forward voltage fluss-spannung 1 ) v vrms [v] i d [a] @ v wm [v] v br [v] @ i t [ma] v f [v] @ i f [a] gbu8kd < 140 < 5 190 > 210 1 < 0.9 8 GBU8KG < 280 < 5 380 > 400 1 < 0.9 8 repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 60 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 300/330 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 450 a 2 s operating junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c thermal resistance junction to case w?rme widerstand sperrschicht C geh?use r thc < 3 k/w admissible torque for mounting zul?ssiges anzugsdrehmoment m3 9 10% lb.in. 1 10% nm 1 valid per diode C gltig pro diode 2 valid, if leads are kept at ambient temperature t a = 50c at a distance of 5 mm from case gltig, wenn die anschlussdr?hte in 5 mm vom geh?use auf umgebungstemperatur t a = 50c gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 21.5 0.7 3.6 0.2 5.08 1.1 +0.2 1 . 7 0 . 1 5 . 6 0.5 +0.1 2.2 3.4 0.1 5 . 3 1 8 . 2 0 . 2 gbu ... + C ~ ~ 1.8 - 0.1
gbu8kd ... GBU8KG characteristics kennwerte esd rating according to jesd22-a114 / contact discharge esd-festigkeit gem?? jesd22-a114 / kontaktentladung c = 100pf r = 1.5k 10 kv reverse peak pulse power dissipation 10/1000s pulse 1 ) impuls-verlustleistung in sperr-richtung t a = 25c p ppm 800 w max. forward peak pulse current 10/1000s pulse 1 ) max. impuls-strom in fluss-richtung t a = 25c i fpm 120 a 1 see curve i pp = f (t) 10/1000s C s iehe kurve i pp = f (t) 10/1000s 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current versus ambient temperature zul. richtstrom in abh. von der umgebungstemp. i fav [%] 120 100 80 60 40 20 0 [c] t a 150 100 50 0 10/1000s - pulse waveform 10/1000s - impulsform i pp p pp 100 80 60 40 20 0 0 t 1 2 3 4 [ms] [%] t p i /2 ppm p /2 ppm t = 10 s r 10 10 10 1 10 3 2 -1 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 270a-(12a-1v)
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