CPDH3V3UP-HF features -iec61000-4-2 (esd)15kv(contact),20kv(air). -w orking voltage: 3.3v -low leakage current. -low operating and clamping voltages. mechanical data -case: sod-523 standard package ,molded plastic. -t erminals: solderable per mil-std-750, method 2026. -marking code: e3 -mounting position: any -w eight: 0.0012 gram(approx.). circuit diagram maximum ratings (at t a =25c unless otherwise noted) kv a w 20 5 40 v esd i pp p pp o c -55 to +125 -55 to +125 t j operating temperature esd per iec 61000-4-2(air) peak pulse current ( tp = 8/20 us) peak pulse power ( tp = 8/20 us) parameter symbol v alue unit esd per iec 61000-4-2(contact) storage temperature t stg 15 o c v v 3.3 v pt v r wm punch-through voltage reverse stand-off voltage parameter conditions symbol min t yp ma x unit i pt = 2ua electrical characteristic s (at t a =25c unless otherwise noted) snap-back voltage i sb = 50ma v sb reverse leakage current v r wm = 3.3v v i r 2.8 clamping voltage i pp = 1 a, tp=8/20us v c v 0.5 0.05 3.5 5.5 ua i pp = 5 a, tp=8/20us v c v 8.0 i ppr = 1 a, tp=8/20us v cr v 2.4 reverse clamping voltage junction capacitance v r = 0 v , f = 1mhz c j pf 16 12 page 1 comchip t echnology co., l td. rev :a qw -jp018 d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) sod-523 0.014(0.35) 0.010(0.25) 0.051(1.30) 0.043(1.10) 0.033(0.85) 0.030(0.75) 0.067(1.70) 0.059(1.50) 0.006(0.15) 0.003(0.08) 0.008(0.20) ref 0.031(0.77) 0.020(0.51) 0.003(0.07) 0.001(0.01) smd esd protection diode rohs device halogen free
page 2 comchip t echnology co., l td. ra ting and characteristic cur ves (CPDH3V3UP-HF) fig. 2 - power rating derating curve p o w e r r a t i n g ( % ) 0 ambient temperature ( ) o c 0 1 0 0 5 0 2 5 1 2 5 7 5 1 5 0 1 0 2 0 3 0 4 0 5 0 6 0 7 0 8 0 9 0 1 0 0 1 1 0 fig. 1 - non-repetitive max. peak pulse power vs. pulse time m a x . p e a k p u l s e p o w e r - p p p ( k w ) pulse duration-tp(us) 0 . 1 1 1 0 1 0 0 0 . 1 1 0 . 0 1 1 0 0 0 fig.3 - clamping voltage vs. peak pulse current c l a m p i n g v o l t a g e ( v ) peak pulse current(a) 0 0 1 2 3 4 5 6 1 6 1 4 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us rev :a fig.4 - forward voltage vs. forward current f o r w a r d v o l t a g e ( v ) forward current(a) 0 0 1 2 3 4 5 6 1 2 1 0 8 6 4 2 w aveform parameters: tr=8us td=20us qw -jp018 fig.5 - junction capacitance vs. reverse voltage reverse voltage (v) n o r m a l i z e d c a p a c i t a n c e - c j ( p f ) 0 1 2 3 4 0 4 8 1 2 1 6 2 0 smd esd protection diode
page 3 comchip t echnology co., l td. rev :a qw -jp018 b c d d d 2 d 1 s o d - 5 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 1 6 2 . 0 0 0 . 1 0 1 . 5 0 + 0 . 1 0 5 4 . 4 0 0 . 4 0 1 3 . 0 0 0 . 2 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 1 . 0 0 0 . 0 5 9 0 . 0 0 4 + 7 . 0 0 8 0 . 0 3 9 0 . 5 1 2 0 . 0 0 8 s y m b o l ( m m ) ( i n c h ) 0 . 0 7 9 0 . 0 0 4 0 . 1 5 8 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 0 5 0 . 1 3 8 0 . 0 0 2 s o d - 5 2 3 0 . 9 0 0 . 1 0 0 . 0 3 5 0 . 0 0 4 1 . 9 4 0 . 1 0 0 . 0 7 6 0 . 0 0 4 0 . 7 3 0 . 1 0 0 . 0 2 9 0 . 0 0 4 9 . 5 0 1 . 0 0 0 . 3 7 4 0 . 0 3 9 8 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 3 1 5 0 . 0 1 2 / + C 0 . 0 0 4 smd esd protection diode o 1 2 0 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start d 1 d 2 d w 1 t c direction of feed reel t aping specification i n d e x h o l e d e f b w p p 0 p 1 a
c p d h 3 v 3 u p - h f e 3 marking code suggested p ad layout size (inch) 0.055 (mm) 1.40 0.60 0.70 0.024 0.028 sod-523 2.00 0.079 e 0.80 0.031 sod-523 a b c d a c b e d e3 page 4 comchip t echnology co., l td. rev :a qw -jp018 smd esd protection diode part number marking code standard packaging c a s e t y p e 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k
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