document number: 93519 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 1 standard recovery diodes (stud version), 6 a 6f(r) series vishay high power products features ? high surge current capability ? avalanche types available ? stud cathode and stud anode version ? wide current range ? types up to 1200 v v rrm ? rohs compliant typical applications ? converters ? power supplies ? machine tool controls ? battery charges electrical specifications note (1) avalanche version only available from v rrm 400 v to 1200 v product summary i f(av) 6 a do-203aa ( do-4 ) rohs compliant major ratings and characteristics parameter test conditions values units i f(av) 6a t c 160 c i f(rms) 9.5 a i fsm 50 hz 159 a 60 hz 167 i 2 t 50 hz 134 a 2 s 60 hz 141 v rrm range 100 to 1200 v t j - 65 to 175 c voltage ratings type number voltage code v rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v v r(br) , minimum avalanche voltage v (1) i rrm maximum at t j = 175 c ma 6f(r) 10 100 150 - 12 20 200 275 - 40 400 500 500 60 600 725 750 80 800 950 950 100 1000 1200 1150 120 1200 1400 1350
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93519 2 revision: 29-sep-08 6f(r) series vishay high power products standard recovery diodes (stud version), 6 a note (1) available only for avalanch e version, all other par ameters the same as 6f forward conduction parameter symbol test conditions values units maximum average forward current at case temperature i f(av) 180 conduction, half sine wave 6a 160 c maximum rms forward current i f(rms) 9.5 a maximum non-repetitive peak reverse power p r (1) 10 s square pulse, t j = t j maximum 4 k/w maximum peak, one cycle forward, non-repetitive surge current i fsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 159 a t = 8.3 ms 167 t = 10 ms 100 % v rrm reapplied 134 t = 8.3 ms 141 maximum i 2 t for fusing i 2 t t = 10 ms no voltage reapplied 127 a 2 s t = 8.3 ms 116 t = 10 ms 100 % v rrm reapplied 90 t = 8.3 ms 82 maximum i 2 t for fusing i 2 t t = 0.1 to 10 ms, no voltage reapplied 1270 a 2 s low level value of threshold voltage v f(to)1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 0.63 v high level value of threshold voltage v f(to)2 (i > x i f(av) ), t j = t j maximum 0.86 low level value of forward slope resistance r f1 (16.7 % x x i f(av) < i < x i f(av) ), t j = t j maximum 15.7 m high level value of forward slope resistance r f2 (i > x i f(av) ), t j = t j maximum 5.6 maximum forward voltage drop v fm i pk = 19 a, t j = 25 c, t p = 400 s rectangular wave 1.10 v thermal and mechanical specifications parameter symbol test conditions values units maximum junction temperature range t j - 65 to 175 c maximum storage temperature range t stg - 65 to 200 maximum thermal resistance, junction to case r thjc dc operation 2.5 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.5 mounting torque, 10 % lubricated threads (not lubricated threads) 1.2 (1.5) n m (lbf in) approximate weight 7g 0.25 oz. case style see dimensions - link at the end of datasheet do-203aa (do-4)
document number: 93519 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 3 6f(r) series standard recovery diodes (stud version), 6 a vishay high power products note ? the table above shows the increment of thermal resistance r thjc when devices operate at di fferent conduction angles than dc fig. 1 - current ratings characteristics f ig. 2 - current ratings characteristics fig. 3 - forward powe r loss characteristics r thjc conduction conduction angle sinusoidal conduction rect angular conduction test conditions units 180 0.34 0.29 t j = t j maximum k/w 120 0.44 0.48 90 0.57 0.63 60 0.85 0.88 30 1.37 1.39 155 160 165 170 175 01234567 30 60 90 120 1 8 0 maxim u m allo w a b le case temperat u re (c) cond u ction angle a v erage for w ard c u rrent (a) 6f(r) series r (dc) = 2. 5 k/ w thjc 155 160 165 170 175 0246 8 10 dc 30 60 90 120 1 8 0 maxim u m allo w a b le case temperat u re (c) cond u ction period a v erage for w ard c u rrent (a) 6f(r) series r (dc) = 2.5 k/ w thjc 0 255075100 maxim u m allo w a b le am b ient temperat u re (c) 1 5 k / w r = 2 0 k / w - d e l t a r t h s a 3 0 k / w 4 0 k / w 5 0 k / w 0 1 2 3 4 5 6 0123456 a v erage for w ard c u rrent (a) rms li mi t maxim u m a v erage for w ard po w er loss ( w ) cond u ction angle 1 8 0 120 90 60 30 6f(r) series t = 175c j
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93519 4 revision: 29-sep-08 6f(r) series vishay high power products standard recovery diodes (stud version), 6 a fig. 4 - forward power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - forward volt age drop characteristics fig. 8 - thermal impedance z thjc characteristics 0 255075100 maxim u m allo w a b le am b ient temperat u re (c) 2 0 k / w 3 0 k / w 4 0 k/ w 5 0 k/ w r = 1 5 k / w - d e l t a r 1 0 k / w t h s a 0 1 2 3 4 5 6 7 8 0246 8 10 dc 1 8 0 120 90 60 30 a v erage for w ard c u rrent (a) rms limit maxim u m a v erage for w ard po w er loss ( w ) cond u ction period 6f(r) series t = 175c j 40 50 60 70 8 0 90 100 110 120 130 140 150 110100 peak half sine w a v e for w ard c u rrent (a) nu m b er of e qu al amplit u de half cycl e c u rrent p u lses ( n ) initi al t = 175c @ 60 hz 0.00 8 3 s @ 50 hz 0.0100 s 6f(r) series at any rated load condition and w ith ra t e d v applied follo w ing s u rge. rrm j 30 40 50 60 70 8 0 90 100 110 120 130 140 150 160 0.01 0.1 1 pea k hal f sine w a v e for w ard c u rrent (a) p u lse train d u ration (s) 6f(r) series initial t = 175c n o v ol tage reapplied ra t e d v reapplied v ers u s p u lse train d u ration. maxim u m n on repeti ti v e s u rge c u rrent rrm j 1 10 100 1000 00.511.522.5 t = 25c j instantaneo u s for w ard c u rrent (a) instantaneo u s for w ard v oltage ( v ) 6f(r) series t = 175c j 0.1 1 10 0.001 0.01 0.1 1 10 s qu are w a v e p u lse d u ration (s) thjc transient thermal impedance z (k/ w ) 6f(r) series steady state v al u e r = 2 .5 k/ w (dc operation) thjc
document number: 93519 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 29-sep-08 5 6f(r) series standard recovery diodes (stud version), 6 a vishay high power products ordering information table 4 - voltage code x 10 = v rrm (see voltage ratings table) - current rating: code = i f(av) 3 1 - f = standard device 2 - none = stud normal polarity (cathode to stud) r = stud reverse polarity (anode to stud) none = stud base do-203aa (do-4) 10-32unf-2a m = stud base do-203aa (do-4) m5 x 0.8 (not available for avalanche diode) 5 - device code 5 13 24 6 f r 120 m links to related documents dimensions http://www.vishay.com/doc?95311
document number: 95311 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 30-jun-08 1 do-203aa (do-4) outline dimensions vishay semiconductors dimensions in millimeters (inches) 3.30 (0.13) 4.00 (0.16) 5.50 (0.22) min. 10.20 (0.40) max. 11.50 (0.45) 10.70 (0.42) 10/32" unf-2a for metric devices: m5 x 0.8 0.8 0.1 (0.03 0.004) r 0.40 r (0.02) ? 6.8 (0.27) ? 1.80 0.20 (? 0.07 0.01) 3.50 (0.14) 20.30 (0.80) max. 11 (0.43) 2 + 0.3 0 (0.08 ) + 0.01 0
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