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| savantic semiconductor product specification silicon npn power transistors 2SC3231 d escription with to-220 package wide area of safe operation applications switching regulators general purpose power amplifiers tv horizontal output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 150 v v ebo emitter-base voltage open collector 7 v i c collector current (dc) 4 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3231 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =25ma ;i b =0 150 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 200 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =4a; i b =0.4a 1.0 v i cbo collector cut-off current v cb =200v;i e =0 100 a i ebo emitter cut-off current v eb =7v; i c =0 100 a h fe dc current gain i c =1a ; v ce =5v 30 150 f t transition frequency i c =0.5a ; v ce =5v 8 mhz savantic semiconductor product specification 3 silicon npn power transistors 2SC3231 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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