unisonic technologies co., ltd uf830 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2011 unisonic technologies co., ltd qw-r502-046,g 4.5a, 500v, 1.5 , n-channel power mosfet ? description the n-channel enhancement mode silicon gate power mosfet is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ? features * r ds(on) =1.5 ? * single pulse avalanche energy rated * rugged- soa is power dissipation limited * fast switching speeds * linear transfer characteristics * high input impedance ? symbol to-220 to-220f to-262 1 to-252 1 to-251 1 to-263 1 to-220f1 1 to-220f2 1 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 uf830l-ta3-t uf830g-ta3-t to-220 g d s tube uf830l-tf3-t uf830g-tf3-t to-220f g d s tube uf830l-tf1-t uf830g-tf1-t to-220f1 g d s tube uf830l-tf2-t UF830G-TF2-T to-220f2 g d s tube uf830l-tm3-t uf830g-tm3-t to-251 g d s tube uf830l-tn3-r uf830g-tn3-r to-252 g d s tape reel uf830l-t2q-t uf830g-t2q-t to-262 g d s tube uf830l-tq2-r uf830g-tq2-r to-263 g d s tape reel uf830l-tq2-t uf830g-tq2-t to-263 g d s tube note: pin assignment: g: gate d: drain s: source
uf830 power mosfet unisonic technologies co., ltd 2 of 8 www.unisonic.com.tw qw-r502-046,g ? absolute maximum ratings ( t a = 25c, unless otherwise specified.) parameter symbol ratings unit drain to source voltage (t j =25c ~125c) v ds 500 v drain to gate voltage (r gs =20k ? , t j =25c ~125c) v dgr 500 v gate to source voltage v gs 30 v drain current continuous i d 4.5 a pulsed i dm 18 a power dissipation (t c = 25c) to-220/to-262/to-263 p d 73 w to-220f/ to-220f1 38 w to-220f2 40 to-251/to-252 46 w single pulse avalanche energy rating (note 2) e as 300 mj junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values be yond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. v dd =50v, starting t j =25c, l=25mh, r g =25 ? , peak i as =4.5a ? thermal data parameter symbol ratings unit junction to ambient to-220/to-262/to-263 ja 62.5 c/w to-220f/ to-220f1 62.5 c/w to-220f2 62.5 to-251/to-252 100.3 c/w junction to case to-220/to-262/to-263 jc 1.71 c/w to-220f/ to-220f1 3.31 c/w to-220f2 3.125 to-251/to-252 2.7 c/w ? electrical specifications (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit drain-source breakdown voltage bv dss i d =250 a, v gs =0v 500 v gate threshold voltage v gs ( th ) v gs =v ds , i d =250 a 2.0 4.0 v on-state drain current (note 1) i d ( on ) v ds >i d ( on ) r ds ( on ) ma x , v gs =10v 4.5 a drain-source leakage current i dss v ds = rated bv dss , v gs =0v 25 a v ds =0.8rated bv dss v gs =0v, t j = 125c 250 a gate-source leakage current i gss v gs =30v 100 na static drain-source on-state resistance r ds ( on ) i d =2.5a, v gs =10v (note 2) 1.3 1.5 ? forward transconductance (note 1) g fs v ds 10v, i d =2.7a 2.5 4.2 s turn-on delay time t d ( on ) v dd =250v, i d 4.5a r gs =12 ? , r l =54 ? (note 2) 10 17 ns turn-on rise time t r 15 23 ns turn-off delay time t d ( off ) 33 53 ns turn-off fall time t f 16 23 ns note: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. mosfet switching times are essentia lly independent of oper ating temperature. 3. gate charge is essentially i ndependent of operat ing temperature.
uf830 power mosfet unisonic technologies co., ltd 3 of 8 www.unisonic.com.tw qw-r502-046,g ? electrical specifications(cont.) (t a =25c, unless otherwise specified.) parameter symbol test conditions min typ max unit total gate charge q g v gs =10v, i d =4.5a v ds =0.8rated bv dss i g(ref) =1.5ma (note 3) 22 32 nc gate-source charge q gs 3.5 nc gate-drain charge q gd 11 nc input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 600 pf output capacitance c oss 100 pf reverse transfer capacitance c rss 20 pf note: 1. pulse test: pulse width 300 s, duty cycle 2%. 2. mosfet switching times are essentia lly independent of oper ating temperature. 3. gate charge is essentially i ndependent of operat ing temperature. ? internal package inductance parameter symbol min typ max unit internal drain inductance measured from the contact scr ew on tab to center of die l d 3.5 nh measured from the drain lead(6mm from package) to center of die 4.5 nh internal source inductance measured from the source lead(6mm from header) to source bond pad l s 7.5 nh remark: modified mosfet symbol showing the internal devices inductances as below. ? source to drain diode specifications parameter symbol test conditions min typ max unit source to drain diode voltage v sd t j =25c,i sd =4.5a, v gs =0v(note 1) 1.6 v continuous source to drain current i sd note 2 5.5 a pulse source to drain current i sdm 18 a reverse recovery time t r r t j =25c, i sd =4.5a, di/dt=100a/ s 180 350 760 ns reverse recovery charge q rr t j =25c, i sd =4.5a, di/dt=100a/ s 0.96 2.2 4.3 c note : 1. pulse test: pulse width 300 s, duty cycle 2%. 2. modified mosfet symbol showing the integral reverse p-n junction diode as below. g s d
uf830 power mosfet unisonic technologies co., ltd 4 of 8 www.unisonic.com.tw qw-r502-046,g ? test circuits and waveforms v gs t p r g i as dut 0.01 v ds l + - v dd 0v vary t p to obtain required peak i as unclamped energy test circuit unclamped energy waveforms v gs r g dut r l + - v dd switching time test circuit
uf830 power mosfet unisonic technologies co., ltd 5 of 8 www.unisonic.com.tw qw-r502-046,g ? test circuits and waveforms (cont.) t on t dly(on) t r 90% 10% 0 v ds t dly(off) t off t f 90% 10% 90% 50% 50% v gs 0 10% pulse width resistive switching waveforms gate charge test circuit gate charge waveforms
uf830 power mosfet unisonic technologies co., ltd 6 of 8 www.unisonic.com.tw qw-r502-046,g ? typical characteristics 0 case temperature, t c (c) 50 100 150 1.2 normalized power dissipation vs. case temperature 1.0 0.6 0.2 0 0.4 0.8 case temperature,t c (c) 75 100 150 maximum contionuous drain current vs. case temperature 0 125 50 25 1 2 3 4 5 0.01 rectangular pulse duration, t 1 (s) normalized maximum transient thermal impedance 1 10 -5 10 -4 10 -3 10 -2 10 -1 10 single pulse 0.2 0.1 0.01 0.1 1 p dm t1 t2 0.05 0.02 0.5 100 10 0.1 drain to source voltage, v ds (v) forward bias safe operating area 10 2 10 1 1 1 m s 10 3 operation in this region is limited by r ds (on) 100m s 1 0m s 1 0 s t c =25c t j =max rated single pulse 1 0 0 s d c drain to source voltage, v ds (v) 100 150 300 output characteristics 0 250 50 0 1 3 4 5 6 v gs =10v v gs =5.5v v gs =4.0v v gs =4.5v v gs =5.0v pulse duration=80 s duty cycle = 0.5% max 200 2 drain to source voltage, v ds (v) 4 6 10 saturation characteristics 0 8 2 0 1 2 3 4 5 v gs =10v v gs =5.5v v gs =5.0v v gs =4.5v v gs =4.0v pulse duration=80 s duty cycle = 0.5% max *notes: duty factor, d=t1/t2 peak t j =p dm z jc r jc +t c
uf830 power mosfet unisonic technologies co., ltd 7 of 8 www.unisonic.com.tw qw-r502-046,g ? typical characteristics (cont.) drain to source current, i ds (on) (a) gate to source voltage, v gs (v) 2 5 7 transfer characteristics 0 6 1 0 1 2 3 4 5 4 3 t j = 25c t j = -40c t j = 125c drain to source on resistance, r ds (on) ( ? ) case temperature, t c (c) 4 16 20 drain to source on resistance vs. gate voltage and drain current 0 0 2 12 v gs =10v v gs =20v 8 4 6 8 10 pulse duration=80 s duty cycle = 0.5% max pulse duration=80 s duty cycle = 0.5% max v ds > i d(on) r ds(on)max normalized drain to source on resistance junction temperature, t j (c) 0 80 normalized drain to source on resistance vs. junction temperature 0.2 120 -40 0.6 1.0 1.4 1.8 2.2 40 pulse duration=80 s duty cycle = 0.5% max v gs =10v, i d =2.5a 140 100 60 20 -20 -60 normalized drain to source breakdown voltage junction temperature, t j (c) 0 80 normalized drain to source breakdown voltage vs. junction temperature 0.75 160 -40 1.25 40 120 0.85 0.95 1.05 1.15 140 100 60 20 -20 i d =250 a capacitance vs. drain to source voltage capacitance, c (pf) drain to source voltage, v ds (v) 0 1 400 800 2000 20 c iss 50 1600 1200 10 30 30 v gs =0v, f=1mhz c iss =c gs +c gd c rss =c gd c oss =c ds +c gs c rss c oss transconductance, g fs (s) drain current, i d (a) 2 35 transconductance vs. drain current 0 4 1 0 1 2 3 4 5 t j = -40c t j = 25c t j = 125c pulse duration=80 s duty cycle = 0.5% max
uf830 power mosfet unisonic technologies co., ltd 8 of 8 www.unisonic.com.tw qw-r502-046,g ? typical characteristics (cont.) source to drain current, i sd (a) gate to source voltage, v gs (v) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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