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mil-prf-19500/564e 22 december 1997 superseding mil-s-19500/564d 9 december 1994 performance specification sheet semiconductor device, field effect transistor, p-channel, silicon types 2n6849, 2n6849u, 2n6851 and 2n6851u jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all depart- ments and agencies of the department of defense. 1. scope 1.1 scope. this specification covers the performance requirements for a p-channel, enhancement-mode, mosfet, power transistor. four levels of product assurance are provided for each encapsulated device type as specified in mil -prf -19500. two levels of product assurance are provided for each unencapsulated device type. 1.2 physical dimensions. see figures 1 and 2, to-205af (formerly to-39), 3 (lcc), and figures 4, 5, and 6 for janhc and jankc die dimensions. 1.3 maximum ratings. unless otherwise specified, t a = +25 ( c. type p t 1/ p t v ds v dg v gs i d1 2 / i d2 2 / i s i dm t j and 3/ t c = +25 ( c t a = +25 ( c t c = +25 ( c t c = +100 ( c t stg w w v dc v dc v dc a dc a dc a dc a(pk) ( c 2n6849 25 0.8 -100 -100 20 -6.5 -4.1 -6.5 -25 -55 to +150 2n6851 25 0.8 -200 -200 20 -4.0 -2.4 -4.0 -20 -55 to +150 1/ derate linearly 0.2 w/ ( c for t c > +25 ( c. t j max - t c p t = r jc 2/ 3/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified. amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 22 march 1998. inch-pound d jc jc ds jmax i = t - t ( r ) x ( r at t ) on max q beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: commander, defense supply center columbus, attn: dscc-vat, 3990 east broad st., columbus, oh 43216-5000, by using the addressed standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter.
mil-prf-19500/564e ltr dimensions notes inches millimeters min max min max cd .305 .335 7.75 78.51 ch .160 .180 4.07 4.57 lc .200 tp 5.08 tp 6 ld .016 .021 0.41 0.53 7,8 lu .016 .019 0.41 0.48 7,8 hd .335 .370 8.51 9.40 cd .305 .335 7.75 8.51 tw .028 .034 0.71 0.86 2 tl .029 .045 0.74 1.14 3 ll .500 .750 12.70 19.05 7,8 l 1 .050 1.27 7,8 l 2 .250 6.35 7,8 p .100 2.54 5 q .050 1.27 4 r .010 0.25 9 a 45 tp 45 tp 6 notes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. beyond radius (r) maximum, tw shall be held for a minimum length of .011 inch (0.28 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is not controlled. 5. dimension cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods or by the gauge and gauging procedure shown on figure 2. 7. lu applies between l 1 and l 2 . ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 8. all three leads. 9. radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. 11. in accordance with ansi y14.5m, diameters are equivalent to 1 x symbology. figure 1. physical dimensions for to-205af. 2
mil-prf-19500/564e 3 dimensions ltr notes inches millimeters min max min max 1 b 1 .0595 .0605 1.511 1.537 1 b 2 .0325 .0335 0.826 0.851 e .1995 .2005 5.067 5.093 e 1 .0995 .1005 2.527 2.553 h .150 nominal 3.81 nominal j .0175 .0180 0.444 0.457 j 1 .0350 .0355 0.889 0.902 k .009 .011 0.23 0.28 k 1 .125 nominal 3.18 nominal l .372 .378 9.45 9.60 l 1 .054 .055 1.37 1.40 s .182 .199 4.62 5.05 2 44.90 ( 45.10 ( 44.90 ( 45.10 ( notes: 1. dimensions are in inches. metric equivalents are given for general information only. 2. the location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of the device being checked. 3. gauging procedure. the device being measured shall be inserted until its seating plane is .125 .010 inch (3.18 0.25 mm) from the seating surface of the gauge. a force of 8 .5 ounces shall then be applied parallel and symmetrical to the device's cylindrical axis. when examined visually after the force application (the force need not be removed), the seating plane of the device shall be seated against the gauge. the use of a pin straightener prior to insertion in the gauge is permissible. 4. gauging plane. 5. drill angle. figure 2. gauge for lead and tab location.
mil-prf-19500/564e 4 sym. inches millimeters min max min max bl .345 .360 8.77 9.14 bw .280 .295 7.12 7.49 ch .095 .115 2.42 2.92 ll1 .040 .055 1.02 1.39 ll2 .055 .065 1.40 1.65 ls .050 bsc 1.27 bsc ls1 .025 bsc 0.635 bsc notes: 1. dimensions are in inches. metric equivalents are ls2 .008 bsc 0.203 bsc given for information only. 2. in accordance with ansi y14.5m, diameters are lw .020 .030 0.51 0.76 equivalent to 1 x symbology. q1 .105 ref 2.67 ref q2 .120 ref 3.05 ref q3 .045 .055 1.15 1.39 tl .070 .080 1.78 2.03 tw .120 .130 3.05 3.30 figure 3. physical dimensions for lcc.
mil-prf-19500/564e 5 2n6849 and 2n6851 dimensions 2n6849 2n6851 ltr inches millimeters inches millimeters min max min max min max min max a .106 .122 2.69 3.10 .108 .124 2.74 3.15 b .172 .188 4.37 4.78 .173 .189 4.39 4.80 c .021 .029 0.53 0.74 .022 .030 0.56 0.76 d .035 .043 0.89 1.09 .030 .038 0.76 0.97 e .028 .036 0.71 0.91 .021 .029 0.53 0.74 f .014 .022 0.36 0.56 .012 .020 0.30 0.51 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: the back metals are chromium, nickel, and silver and comprise the drain. the top metal is aluminum. 4. die thickness is .0187 inch (0.475 mm), the tolerance is .0050 inch ( 0.13 mm). figure 4. janhca and jankca die dimensions.
mil-prf-19500/564e 6 2n6849 and 2n6851 dimensions ltr inches millimeters min max min max a .124 .128 3.15 3.25 b .180 .182 4.57 4.62 c .012 .016 0.31 0.41 d .033 .037 0.84 0.94 e .025 .029 0.64 0.74 f .022 .026 0.56 0.66 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: the back metals are chromium, nickel, and silver and comprise the drain. the top metal is aluminum. 4. die thickness is .014 inch (0.36 mm), the tolerance is .0050 inch ( 0.13 mm). figure 5. janhcb and jankcb die dimensions.
mil-prf-19500/564e 7 2n6849 and 2n6851 dimensions ltr inches millimeters min max min max a .116 .120 2.94 3.05 b .178 .182 4.52 4.62 c .034 .036 0.86 0.91 d .033 .037 0.84 0.94 e .020 .024 0.50 0.61 f .021 .025 0.53 0.64 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. the physical characteristics of the die are: the back metals are chromium, nickel, and silver and comprise the drain. the top metal is aluminum. 4. die thickness is .018 inch (0.46 mm), the tolerance is .0050 inch ( 0.13 mm). figure 6. janhcc and jankcc die dimensions.
mil-prf-19500/564e 8 . 1.4 primary electrical characteristics at t a = +25 ( c. min v (br)dss v gs(th)1 max i dss1 max r ds(on) 1/ r jc type v gs = 0 v dc v ds v gs v gs = 0 v dc v gs = -10 v dc maximum 2/ i d = -1.0 ma dc i d = -0.25 ma dc v ds = 80 t j = +25 ( c t j = +150 ( c percent of at i d2 at i d2 rated v ds v dc v dc a dc ohm ohm ( c/w min max 2n6849 -100 -2.0 -4.0 -25 0.30 0.60 5.0 2n6851 -200 -2.0 -4.0 -25 0.80 1.68 5.0 1/ pulsed (see 4.5.1). 2/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified. 2. applicable documents 2.1 general. the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other sections of this specification or recommended for additional information or as examples. while every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 specifications, standards, and handbooks. the following specifications, standards, and handbooks form a part of this document to the extent specified herein. unless otherwise specified, the issues of these documents are those listed in the issue of the department of defense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devices, general specification for. standard military mil-std -750 - test methods for semiconductor devices. (unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the standardization document order desk, 700 robbins avenue, building 4d, philadelphia, pa 19111-5094.) 2.3 order of precedence. in the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements
mil-prf-19500/564e 9 3.1 associated specification. the individual item requirements shall be in accordance with mil -prf -19500 and as specified herein. 3.2 abbreviations, symbols, and definitions. abbreviations, symbols, and definitions used herein shall be as specified in mil-prf -19500 and as follows: c - - - - - - - - - - - - - - - - - - - - - coulomb. g fs - - - - - - - - - - - - - - - - - - - - dc forward transconductance. i s - - - - - - - - - - - - - - - - - - - - - source current through drain (forward biased v sd ). v (br)dss - - - - - - - - - - - - - - - - - - drain to source breakdown voltage, all other terminals short-circuited to source. i (iso) - - - - - - - - - - - - - - - - - - source pin to case isolation current. 3.3 interface requirements and physical dimensions. the interface requirements and physical dimensions shall be as specified in mil-prf-19500, and figures 1 (t0-205af), 3 (lcc), 4, 5, and 6 (die) herein. 3.3.1 lead material and finish. lead material shall be kovar, alloy 52, and a copper core is permitted (for t0-205af). lead finish shall be solderable in accordance with mil -prf-19500, mil -std -750, and herein. where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.3). 3.3.2 internal construction. multiple chip construction shall not be permitted. 3.4 marking. marking shall be in accordance with mil -prf -19500. at the option of the manufacturer, marking of country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.5 electrostatic discharge protection. the devices covered by this specification require electrostatic protection. 3.5.1 handling. mos devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. the following handling practices shall be followed: a. devices shall be handled on benches with conductive handling devices. b. ground test equipment, tools, and personnel handling devices. c. do not handle devices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, rubber, or silk in mos areas. f. maintain relative humidity above 50 percent if practical. g. care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. gate must be terminated to source, r 100 k, whenever bias voltage is to be applied drain to source. 3.6 electrical performance characteristics. unless otherwise specified herein, the electrical performance characteristics are as specified in paragraph 1.3, 1.4, and table i. 3.7 electrical test requirements. the electrical test requirements shall be the subgroups specified in paragraphs 4.4.2 and 4.4.3. 3.8 qualification. devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.2 ). 4. verification 4.1 classification of inspections. the inspection requirements specified herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3) c. conformance inspection (see 4.4).
mil-prf-19500/564e 10 4.2 qualification inspection. qualification inspection shall be in accordance with mil -prf -19500 and table ii herein. alternate flow is allowed for qualification inspection in accordance with figure 4 of mil -prf-19500. 4.2.1 group e inspection. group e inspection shall be conducted in accordance with mil -prf -19500 and table ii herein. 4.2.2 janhc and jankc die. qualification shall be in accordance with appendix h of mil -prf-19500. 4.3 screening (jans, jantx, and jantxv levels only). screening shall be in accordance with table iv of mil -prf -19500 and as specified herein. the following measurements shall be made in accordance with table i herein. devices that exceed the limits of table i herein shall not be acceptable. 4.3.1 screening (janhc and jankc). screening of die shall be in accordance with mil -prf -19500. as a minimum, die shall be 100-percent probed in accordance with group a, subgroup 2. measurement screen (see table iv of mil-prf-19500) jans level jantx and jantxv levels 1/ gate stress test (see 4.5.5) gate stress test (see 4.5.5) 1/ method 3161 (see 4.5.3) method 3161 (see 4.5.3) 2/ method 3470 (optional) method 3470 (optional) 3 method 1051, test condition g method 1051, test condition g 9 1/ i gss1, i dss1 , subgroup 2 of table i herein subgroup 2 of table i herein 10 method 1042, test condition b method 1042, test condition b 11 i gss1 , i dss1 , r ds(on)1 , v gs(th)1 , i gss1 , i dss1 , r ds(on)1 , subgroup 2 of table i herein; v gs(th)1 , subgroup 2 of table i i gss1 = 20 na dc or 100 percent herein. of initial value, whichever is greater. i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. 12 method 1042, test condition a, method 1042, test condition a 13 subgroups 2 and 3 of table i herein; subgroup 2 of table i herein; i gss1 = 20 na dc or 100 percent of i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. initial value, whichever is greater. i dss1 = 25 a dc or 100 percent of i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. initial value, whichever is greater. r ds(on)1 = 20 percent of initial r ds(on)1 = 20 percent of initial value. value. v gs(th)1 = 20 percent of initial v gs(th)1 = 20 percent of initial value. value. 1/ shall be performed anytime before screen 10. 2/ method 3470 is optional if performed as a sample in group a, subgroup 5. 4.4 conformance inspection. conformance inspection shall be in accordance with mil -prf -19500. alternate flow is allowed for conformance inspection in accordance with figure 4 of mil -prf-19500.
mil-prf-19500/564e 11 4.4.1 group a inspection. group a inspection shall be conducted in accordance with mil -prf -19500 and table i herein. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. 4.4.2 group b inspection. group b inspection shall be conducted in accordance with the conditions specified for subgroup testing in table via (jans) and table vib (jan, jantx, and jantxv) of mil-prf -19500 and herein. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500. subgroup method condition 3 1051 test condition g. 4 1042 test condition d; 2,000 cycles. the heating cycle shall be 1 minute minimum. 5 1042 accelerated steady-state operation life; test condition a; v ds = rated t a = +175 ( c, t = 120 hours. read and record v (br)dss (pre and post) at 1 ma = i d . read and record i dss (pre and post). deltas for v (br)dss shall not exceed 10 percent and i dss shall not exceed 25 a. accelerated steady-state gate stress; condition b, v gs = rated, t a +175 ( c, t = 24 hours. 5 2037 bond strength (al-au die interconnects only); test condition a. 6 3161 see 4.5.2. 4.4.2.2 group b inspection, table vib (jan, jantx, and jantxv) of mil-prf-19500. subgroup method condition 2 1051 test condition g, 25 cycles. 3 1042 test condition d, 2,000 cycles. the heating cycle shall be 1 minute minimum. 3 2037 test condition a. all internal bond wires for each device shall be pulled separat ely. 4.4.3 group c inspection. group c inspection shall be conducted in accordance with the conditions specified for subgroup testing in table vii of mil -prf -19500 and as follows. electrical measurements (end-points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. subgroup method condition 2 2036 test condition e (not required for lcc). 6 1042 test condition d, 6,000 cycles. the heating cycle shall be 1 minute minimum. 4.5 methods of inspection. methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 pulse measurements. conditions for pulse measurement shall be as specified in section 4 of mil -std -750.
mil-prf-19500/564e 12 4.5.2 thermal resistance. thermal resistance measurements shall be performed in accordance with method 3161 of mil -std -750. r jc(max) = 5.0 ( c/w. a. measuring current (i m ) - - - - - - - - - - - - 10 ma. b. drain heating current (i h ) - - - - - - - - - - 1 a minimum (1.3 a minimum for lcc). c. heating time (t h ) - - - - - - - - - - - - - - steady -state (see mil -std -750, method 3161 for definition). d. drain-source heating voltage (v h ) - - - - - - 25 v dc minimum (15 v minimum for lcc). e. measurement time delay (t md ) - - - - - - - - - 10 to 80 s. f. sample window time (t sw ) - - - - - - - - - - - 10 s maximum. 4.5.3 thermal impedance (z jc(max) measurements) . the z jc measurements shall be performed in accordance with mil-std -750, method 3161. the maximum limit (not to exceed figure 6, thermal impedance curves and the group a, subgroup 2 limits) for z jc in screening (table iv of mil-prf -19500) shall be derived by each vendor by means of statistical process control. when the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. in addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable x, r chart. if a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. this procedure may be used in lieu of an in line process monitor. a. measuring current (i m ) - - - - - - - - - - - - - - 10 ma. b. drain heating current (i h ) - - - - - - - - - - - - 1 a minimum (1.3 a minimum for lcc). c. heating time (t h ) - - - - - - - - - - - - - - - - - 10 ms. d. drain-source heating voltage (v h ) - - - - - - 25 v dc minimum (15 v minimum for lcc). e. measurement time delay (t md ) - - - - - - - - - 30 to 60 s. f. t sw sample window time - - - - - - - - - - - - 10 s (maximum). 4.5.4 unclamped inductive switching. a. peak current (i d ) - - - - - - - - - - - - - - - - - rated i d1 . b. peak gate voltage (v gs ) - - - - - - - - - - - - -10 v dc. c. gate to source resistor (r gs ) - - - - - - - - - 25 6 r gs 200 6 . d. initial case temperature (t c ) - - - - - - - - - +25 ( c +10 ( c, -5 ( c. e. inductance (l) - - - - - - - - - - - - - - - - - - - 100 h 10 percent. f. number of pulses to be applied - - - - - - - - 1 pulse minimum. g. pulse repetition rate - - - - - - - - - - - - none. 4.5.5 gate stress test. v gs = 30 v dc minimum. t = 250 s minimum.
mil-prf-19500/564e 13 table i. group a inspection. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 1 visual and mechanical 2071 inspection subgroup 2 thermal impedance 2/ 3161 see 4.5.3 z jc 1.6 ( c/w breakdown voltage, 3407 v gs = 0 v dc; i d = -1.0 ma dc; v (br)dss drain to source bias condition c 2n6849 -100 v dc 2n6851 -200 v dc gate to source voltage 3403 v ds v gs ; v gs(th)1 -2.0 -4.0 v dc (threshold) i d = -0.25 ma dc gate current 3411 bias condition c; v ds = 0 v dc; i gss1 100 na dc v gs = +20 v dc and -20 v dc drain current 3413 v gs = 0; bias condition c; i dss1 -25 a dc v ds = 0 v dc; v ds = 80 percent of rated v ds static drain to source 3421 v gs = -10 v dc; condition a; r ds(on)1 on-state resistance pulsed (see 4.5.1); i d = i d2 2n6849 0.30 6 2n6851 0.80 6 drain to source 3421 v gs = -10 v dc; condition a; r ds(on)2 on-state resistance pulsed (see 4.5.1); i d = i d1 2n6849 0.32 6 2n6851 0.83 6 forward voltage 4011 pulsed (see 4.5.1); v sd (source drain diode) v gs = 0 v dc; i s = i d1 (for devices with a multiple diode structure) 2n6849 -4.3 v dc 2n6851 -5.6 v dc see footnote at end of table.
mil-prf-19500/564e 14 table i. group a inspection - cont inued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 3 high temperature t c = t j = +125 ( c operation: gate current 3411 bias condition c; i gss2 200 na dc v ds = 0 v dc; v gs = +20 v dc and -20 v dc drain current 3413 bias condition c; i dss2 -.25 ma dc v gs = 0 v dc; v ds = 80 percent rated v ds gate to source voltage 3403 v ds v gs ; v gs(th)2 -1.0 v dc (threshold) i d = -.25 ma static drain to source 3421 v gs = -10 v dc; r ds(on)3 on-state resistance pulsed (see 4.5.1); i d = i d2 2n6849 0.54 ohms 2n6851 1.60 ohms low temperature t c = t j = -55 ( c operation: gate to source voltage 3403 v ds v gs ; v gs(th)3 -5.0 v dc (threshold) i d = -.25 ma subgroup 4 switching time test 3472 i d = rated i d1 ; (see 1.3); v gs = -10 v dc; gate drive impedance = 7.5 6 turn -on delay time t d(on) 2n6849 v dd = -40 v dc 60 ns 2n6851 v dd = -75 v dc 50 ns rise time t r 2n6849 v dd = -40 v dc 140 ns 2n6851 v dd = -75 v dc 100 ns see footnote at end of table.
mil-prf-19500/564e 15 table i. group a inspection - continued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 4 - continued turn -off delay time t d(off) 2n6849 v dd = -40 v dc 140 ns 2n6851 v dd = -75 v dc 80 ns fall time t f 2n6849 v dd = -40 v dc 140 ns 2n6851 v dd = -75 v dc 80 ns subgroup 5 single pulse unclamped 3470 see 4.5.4 inductive switching 3/ electrical measurements see table i, group a; subgroup 2. safe operating area test 3474 see figure 8; v ds = 80 percent of rated v ds ; v ds 200 v dc maximum; t p = 10 ms electrical measurements see table i, group a, subgroup 2. subgroup 6 not applicable subgroup 7 gate charge 3471 condition b test 1 on-state gate charge q g(on) 2n6849 34.8 nc 2n6851 34.8 nc test 2 gate to source charge q gs 2n6849 6.8 nc 2n6851 6.1 nc see footnote at end of table.
mil-prf-19500/564e 16 table i. group a inspection - continued. inspection 1/, 4 / mil-std -750 symbol limits unit method conditions min max subgroup 7 - continued test 3 gate to drain charge q gd 2n6849 23.1 nc 2n6851 20.5 nc reverse recovery time 3473 v dd -50 v dc t rr 2n6849 di/dt -100 a/ s; 250 ns i f = -6.5 a 2n6851 di/dt -100 a/ s; 400 ns i f = -4.0 a 1/ for sampling plan, see mil -prf-19500. 2/ this test is required for the following endpoint measurements only (not intended for screen 13): jans - group b, subgroups 3 and 4 jan, jantx and jantxv - group b, subgroups 2 and 3; group c, subgroup 6; group e, subgroup 1 3/ this test is optional if performed as a 100 percent screen. 4/ electrical characteristics for "u" suffix devices are identical to the corresponding non"u" suffix devices unless otherwise specified.
mil-prf-19500/564e 17 table ii. group e inspection (all quality levels) for qualification only. inspection 1/ mil-std -750 qualification conformance method conditions inspection subgroup 1 45 devices, c = 0 thermal shock 1051 condition g, 500 cycles (temperature cycling) electrical measurements see table i, group a, subgroup 2. subgroup 2 2 / 45 devices, c = 0 steady-state reverse bias 1042 condition a; 1,000 hours electrical measurements see table i, group a, subgroup 2. steady-state gate bias 1042 condition b; 1,000 hours electrical measurements see table i, group a, subgroup 2. subgroup 3 not applicable subgroup 4 5 devices, c = 0 thermal resistance 3161 r jc = 5.0 ( c/w maximum, see 4.5.2 subgroup 5 not applicable 1/ janhc and jankc devices are qualified in accordance with mil-prf-19500. 2/ a separate sample may be pulled for each test.
mil-prf-19500/564e 18 2n6849, 2n6849u, 2n6851, and 2n6851u figure 7. normalized transient thermal impedance.
mil-prf-19500/564e 19 active region - 2n6849, 2n6849u figure 8. maximum safe operating
mil-prf-19500/564e 20 active region - 2n6851, 2n6851u figure 8. maximum safe operating area - continued.
mil-prf-19500/564e 21 5. packaging 5.1 packaging. for acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). when actual packaging of material is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging activity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense agency's automated packaging files, cd-rom products, or by contacting the responsible packaging activity. 5.2 marking. unless otherwise specified (see 6.2), marking shall be in accordance with mil-prf-19500. 6. notes (this section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 notes. the notes specified in mil -prf -19500 are applicable to this specification. 6.2 cross -reference and complement list. parts from this specification may be used to replace the following commercial part or identifying number (pin's). the term pin is equivalent to the term part number which was previously used in this specification. preferred types commercial types 1/ 2n6849 irff9130, irff9131, irff9132, irff9133 2n6851 irff9230, irff9231, irff9232, irff9233 2n6849u irfe9130, irfe9131, irfe9132, irfe9133 2n6851u irfe9230, irfe9231, irfe9232, irfe9233 1/ complementary devices can be found on mil-prf-19500/557 6.3 acquisition requirements. acquisition documents must specify the following: a. issue of dodiss to be cited in the solicitation (see 2.1.1 and 2.2). b. the lead finish as specified (see 3.3.1). c. for die acquisition, specify the janhc or jankc letter version (see figures 3 through 5). d. type designation and quality assurance level. 6.4 suppliers of janhc and jankc die. the qualified die suppliers with the applicable letter version (example, janhca2n6849) will be identified on the qpl. 6.5 changes from previous issue. marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. concluding material custodians: preparing activity: army - cr dla - cc navy - ec air force - 17 (project 5961-1927) nasa - na review activities: army - ar, mi, sm navy - as, cg, mc, td air force - 19, 70, 80, 85
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a reply within 30 days from receipt of the form. note: this form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. i recommend a change: 1. document number mil-prf-19500/564e 2. document date 22 december 1997 3. document title semiconductor device, field effect transistor, p-channel, silicon; types 2n6849, 2n6849u; 2n6851, 2n6851u jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include proposed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) (1) commercial (2) autovon (if applicable) 7. date submitted (yymmdd) 8. preparing activity a. name alan barone b. telephone (include area code) (1) commercial (2) autovon 614-692-0510 850-0510 c. address (include zip code) defense supply center columbus 3990 east broad st. columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense quality and standardization office 5203 leesburg pike, suite 1403, falls church, va 22041-3466 telephone (703) 756 -2340 autovon 289-2340 dd form 1426, oct 89 previous editions are obsolete 198/290

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