1 item symbol ratings unit remarks drain-source voltage v ds 120 v dsx 90 continuous drain current i d 67 6.3 pulsed drain current i d(puls] 268 gate-source voltage v gs 30 repetitive or non-repetitive i ar 67 non-repetitive maximum avalanche energy e as 719.1 repetitive maximum avalanche energy 27.0 maximum drain-source dv/dt dv ds /dt 20 peak diode recovery dv/dt dv/dt 5 maximum power dissipation p d 2.02 270 operating and storage t ch +150 temperature range t stg electrical characteristics (t c =25c unless otherwise specified) thermalcharacteristics 2SK3922-01 fuji power mosfet n-channel silicon power mosfet features high speed switching low on-resistance no secondary breadown low driving power avalanche-proof applications switching regulators dc-dc converters ups (uninterruptible power supply) maximum ratings and characteristic absolute maximum ratings (tc=25c unless otherwise specified) item symbol test conditions zero gate voltage drain current i dss v ds =120v v gs =0v v ds =96v v gs =0v v gs =30v i d =33.5a v gs =10v i d =33.5a v ds =25v v cc =48v i d =33.5a v gs =10v r gs =10 v v a na m s pf nc v ns c ns min. typ. max. units thermal resistance r th(ch-c) channel to case r th(ch-a) channel to ambient r th(ch-a) *1 channel to ambient 0.463 87.0 52.0 c/w c/w c/w symbol v (br)dss v gs(th) i gss r ds(on) g fs c iss c oss c rss td (on) t r td (off) t f q g q gs q gd v sd t rr q rr item drain-source breakdown voltage gate threshold voltage gate-source leakage current drain-source on-state resistance forward transcondutance input capacitance output capacitance reverse transfer capacitance turn-on time t on turn-off time t off total gate charge gate-source charge gate-drain charge diode forward on-voltage reverse recovery time reverse recovery charge test conditions i d = 250 a v gs =0v i d = 250 a v ds =v gs t ch =25c t ch =125c v ds =0v v ds =75v v gs =0v f=1mhz v cc =60v i d =67a v gs =10v i f =67a v gs =0v t ch =25c i f =67a v gs =0v -di/dt=100a/ s t ch =25c v v a a a v a mj mj kv/ s kv/ s w w c c 120 3.0 5.0 25 250 100 24.6 30.0 14 28 1880 2820 360 540 30 45 20 30 35 53 50 75 23 35 52 78 16 24 18 27 1.10 1.50 150 0.9 -55 to +150 outline drawings [mm] equivalent circuit schematic gate(g) source(s) drain(d) super f ap-g series 200509 = < vgs=-30v ta=25c note *1 note *2 note *3 note *4 vds 120v note *5 ta=25 c note*1 tc=25 c tfp min. typ. max. units http://www.fujielectric.co.jp/fdt/scd/ foot print pattern = < = < note *1 surface mounted on 1000mm 2 ,t=1.6mm fr-4 pcb (drain pad area:500mm 2 ) note *2 tch 150c note *3 starting tch=25c, i as =27a, l=1.32mh, v cc =48v, r g =50 e as limited by maximum channel temperrature and avalanche current. see to ?avalanche energy? graph. note *4 repetitve rating : pulse width limited by maximum channel temperature. see to ?transient thermal impedance? graph. note *5 i f -i d , -di/dt=50a/ s, vcc bv dss , tch 150c = < = < = <
2 characteristics 2SK3922-01 fuji power mosfet 0 25 50 75 100 125 150 0 40 80 120 160 200 240 280 allowable power dissipation pd=f(tc) pd [w] tc [ c] 01234567 0 20 40 60 80 100 120 140 6.0v 7.0v 7.5v 20v 10v 8.0v 6.5v vgs=5.5v id [a] vds [v] typical output characteristics id=f(vds):80 s pulse test,tch=25 c 012345678910 0.1 1 10 100 id[a] vgs[v] typical transfer characteristic id=f(vgs):80 s pulse test,vds=25v,tch=25 c 0.1 1 10 100 0.1 1 10 100 gfs [s] id [a] typical transconductance gfs=f(id):80 s pulse test,vds=25v,tch=25 c 0 20406080100120 0.00 0.04 0.08 0.12 0.16 0.20 7.5v 6.0v rds(on) [ ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 7.0v 6.5v vgs=5.5v 0 25 50 75 100 125 150 0 1 2 3 4 5 surface mounted on 1000mm2,t=1.6mm fr-4 pcb (drain pad area : 500mm2) allowable power dissipation pd=f(tc) pd [w] tc [ c]
3 2SK3922-01 fuji power mosfet -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 max. min. gate threshold voltage vs. tch vgs(th)=f(tch):vds=vgs,id=250 a vgs(th) [v] tch [ c] 0 102030405060708090 0 2 4 6 8 10 12 14 vcc=60v qg [nc] typical gate charge characteristics vgs=f(qg):id=67a,tch=25 c vgs [v] 10 0 10 1 10 2 10 1 10 2 10 3 c [pf] vds [v] typical capacitance c=f(vds):vgs=0v,f=1mhz crss coss ciss 0.00 0.25 0.50 0.75 1.00 1.25 1.50 0.1 1 10 100 if [a] vsd [v] typical forward characteristics of reverse diode if=f(vsd):80 s pulse test,tch=25 c 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 typical switching characteristics vs. id t=f(id):vcc=48v,vgs=10v,rg=10 td(on) tr tf td(off) t [ns] id [a] -50 -25 0 25 50 75 100 125 150 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 rds(on) [ ] tch [ c] typ. max. drain-source on-state resistance rds(on)=f(tch):id=33.5a,vgs=10v
4 2SK3922-01 fuji power mosfet http://www.fujielectric.co.jp/fdt/scd/ 10 -8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 single pulse maximum avalanche current pulsewidth i av =f(t av ):starting tch=25 c,vcc=48v avalanche current i av [a] t av [sec] 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -3 10 -2 10 -1 10 0 10 1 maximum transient thermal impedance zth(ch-c)=f(t):d=0 zth(ch-c) [c/w] t [sec] 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 i as =27a i as =41a i as =67a eav [mj] starting tch [ c] maximum avalanche energy vs. starting tch e(av)=f(starting tch):vcc=48v,i(av)<=67a 0 1000 2000 3000 4000 5000 0 10 20 30 40 50 60 70 80 90 100 rth(ch-a) [c/w] drain pad area [mm 2 ] thermal resistance vs. drain pad area t=1.6mm fr-4 pcb
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