2009. 10. 29 1/8 semiconductor technical data KGT25N120NDA revision no : 0 general description kec npt igbts offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as ih(induction heating), microwave oven, etc. features ? high speed switching ? high system efficiency ? soft current turn-off waveforms ? extremely enhanced avalanche capability maximum rating (ta=25 ? ) *repetitive rating : pulse width limited by max. junction temperature g c e characteristic symbol rating unit collector-emitter voltage v ces 1200 v gate-emitter voltage v ges ?? 20 v collector current @tc=25 ? i c 50 a @tc=100 ? 25 a pulsed collector current i cm * 90 a diode continuous forward current @tc=100 ? i f 25 a diode maximum forward current i fm 150 a maximum power dissipation @tc=25 ? p d 310 w @tc=100 ? 125 w maximum junction temperature t j 150 ? storage temperature range t stg -55 to + 150 ? characteristic symbol max. unit thermal resistance, junction to case (igbt) r jc 0.4 ? /w thermal resistance, junction to case (diode) r jc 2.8 ? /w thermal resistance, junction to ambient r ja 40 ? /w thermal characteristic e c g to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 1. gate 2. collector 3. emitter 0.60+0.15-0.05 15.60 0.20 + 4.80 0.20 + + + + + + + + + + + + + + + 3.20 0.10 + 18.70 0.20 +
2009. 10. 29 2/8 KGT25N120NDA revision no : 0 electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit static collector-emitter breakdown voltage bv ces v ge =0v , i c =1ma 1200 - - v collector cut-off current i ces v ge =0v, v ce =1200v - - 1.0 ma gate leakage current i ges v ce =0v, v ge = ?? 20v - - ?? 100 na gate threshold voltage v ge(th) v ge =v ce, i c =25ma 4.0 5.5 7.0 v collector-emitter saturation voltage v ce(sat) v ge =15v, i c =25a - 1.95 2.30 v v ge =15v, i c =25a, t c = 125 ? - 2.25 - v v ge =15v, i c =50a - 2.50 - v dynamic total gate charge q g v cc =600v, v ge =15v, i c = 25a - 200 300 nc gate-emitter charge q ge - 20 - nc gate-collector charge q gc - 80 - nc turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v,r g =10 ? inductive load, t c = 25 ? - 60 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 290 - ns fall time t f - 100 - ns turn-on switching loss e on - 4.1 6.1 mj turn-off switching loss e off - 0.86 1.4 mj total switching loss e ts - 4.96 7.5 mj turn-on delay time t d(on) v cc =600v, i c =25a, v ge =15v, r g =10 ? inductive load, t c = 125 ? - 60 - ns rise time t r - 50 - ns turn-off delay time t d(off) - 300 - ns fall time t f - 150 - ns turn-on switching loss e on - 4.3 6.3 mj turn-off switching loss e off - 1.2 2.1 mj total switching loss e ts - 5.5 8.4 mj input capacitance c ies v ce =30v, v ge =0v, f=1mhz - 3100 - pf ouput capacitance c oes - 100 - pf reverse transfer capacitance c res - 80 - pf
2009. 10. 29 3/8 KGT25N120NDA revision no : 0 electrical characteristic of diode characteristic symbol test condition min. typ. max. unit diode forward voltage v f i f = 25a t c =25 - 1.8 2.5 v t c =125 - 1.9 - diode reverse recovery time t rr i f = 25a di/dt = 200a/ s t c =25 - 230 330 ns t c =125 - 300 - diode peak reverse recovery current i rr t c =25 - 27 35 a t c =125 - 31 - diode reverse recovery charge q rr t c =25 - 3100 4700 nc t c =125 - 4650 -
2009. 10. 29 4/8 KGT25N120NDA revision no : 0 fig 1. saturation voltage characteristics collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) collector - emitter voltage v ce (v) 45 23 1 0 collector current i c (a) collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector current i c (a) 0 20 16 12 4 8 08 20 41216 0246810 0 20 40 60 80 100 120 140 160 180 40 20 80 100 60 0 25 50 2.0 1.5 2.5 3.0 75 100 125 case temperature t c ( ) c 1 10 40 capacitance (pf) 0 500 3000 2500 4000 4500 5000 3500 1000 1500 2000 common emitter v ge = 15v t c = t c = fig 2. saturation voltage characteristics fig 3. saturation voltage vs. case temperature fig 4. saturation voltage vs. v ge fig 5. saturation voltage vs. v ge fig 6. capacitance characteristics 25 c 125 c common emitter v ge = 15v 20v 8v 15v 10v 12v i c = 25a 40a common emitter t c = 25 c i c = 12.5a 25a 40a collector - emitter voltage v ce (v) gate - emitter voltage v ge (v) collector - emitter voltage v ce (v) 0 20 16 12 4 8 08 20 41216 common emitter t c = 125 c common emitter v ge = 0v, f = 1mhz t c = 25 c i c = 12.5a 25a 40a ciss coss crss ?? t c =25 c common emitter typical performance characteristics
2009. 10. 29 5/8 KGT25N120NDA revision no : 0 collector current i c ( ) switching time (ns) 020 40 30 50 100 10 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tr td(on) fig 10. turn-on characteristics vs. collector curren t collector current i c ( ) switching time (ns) common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c tf td(off) fig 11. turn-off characteristics vs. collector current gate resistance r g ( ? ) switching loss (mj) fig 9. switching loss vs. gate resistance collector current i c ( ) switching loss (mj) 010 30 20 40 50 0.1 10.0 1.0 common emitter v ge = 15v, r g = 10 ? t c = t c = 25 c 125 c fig 12. switching loss vs. collector current eoff eon eoff eon fig 7. turn-on characteristics vs. gate resistance gate resistance r g ( ? ) gate resistance r g ( ? ) switching time (ns) switching time (ns) 0204 060 10 30 50 70 10 100 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c tr td(on) 0204060 10 30 50 70 10 100 1000 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c tf td(off) fig 8. turn-off characteristics vs. gate resistance 0204060 10 30 50 70 0.1 1 10 25 common emitter v cc = 600v, v ge = 15v i c = 25a t c = t c = c 125 c 02040 10 30 50 10 100 1000 typical performance characteristics (continued)
2009. 10. 29 6/8 KGT25N120NDA revision no : 0 fig 13. gate charge characteristics gate charge q g ( nc ) gate-emitter voitage v ge (v) 080 160 40 120 60 140 20 100 200 180 0 2 4 6 8 10 12 14 16 common emitter r l = 24 ? t c = 25 c t urn-off safe operating area v ge = 15v, t c = 125 c fig 14. soa characteristics 1 100 10 1000 1 10 100 fig 15. turn-off soa fig 16. transient thermal impedance of igbt 400v 600v vcc = 200v rectan g ular pulse duration (sec) 10.000 1.000 1e-5 1e-4 1e-3 1e-2 1e-1 1e+00 1e+01 thermal resistance (zthjc) 0.010 0.001 0.100 1. duty factor d=t1/t2 2. peak tj = pdm zthjc + t c t 1 t 2 p dm collector current i c (a) collector-emitter voltage v ce (v) collector current i c (a) collector-emitter voltage v ce (v) 1.00 1 0.01 0.10 0.1 10.00 100.00 10 100 1000 1ms 200 s dc operation 50 s single pluse 0.01 0.02 0.1 0.2 0.5 0.05 single nonrepetitive pulse t c = 25 curves must be derated linearly with increase in temperature c 10ms typical performance characteristics (continued)
2009. 10. 29 7/8 KGT25N120NDA revision no : 0 fig 17. forward characteristics forward voltage v f (v) forward current i f (a) forward current i f (a) reverse recovery current i rrm (a) reverse recovery time t rr (ns) forward current i f (a) 01020 51525 0 20 25 30 15 5 10 fig 18. reverse recovery current fig 19. reverse recovery time di/dt=100a/ s di/dt=200a/ s 01020 51525 0 400 300 100 200 0 0.4 1.2 1.6 2.0 0.8 2.4 0.1 10 50 1 t c = t c = 25 c 125 c t c = 25 c t c = 125 c di/dt=200a/ s di/dt=100a/ s typical performance characteristics
2009. 10. 29 8/8 KGT25N120NDA revision no : 0 fig 21. switching test circuit fig 22. definition switching time & loss fig 23. definition diode switching time 90% 90% 10% 10% + vge vge vce vce ic ic ic ic t2 t1 td tf vce ic dt eoff t1 ? t2 = (off) vcc 10% irr qrr vpk ic diode reverse waveforms trr tx ic dt tx trr = ? gate voltage dut 10% + vg 10% 90% + vg vce vce ic dt eon vcc ic ic ic ipk td tr t1 t1 t2 t2 (on) out voltage and current = ? diode clamp c c g g e e l measurement pulse /dut dut/ vge = 15v -10v 600v rg driver + + _ _ definition switching time & loss.
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