1 high speed cmos logic ic elm7sh04xb inverter general description features application selection guide elm7sh04xb-el symbol a function 04: inverter b package m: sot-25 t : sc-70-5(sot-353) c product version b d taping direction el: refer to pkg file maximum absolute ratings parameter symbol limit unit power supply voltage vdd -0.5 to +6.0 v input voltage vin -0.5 to +6.0 v output voltage vout -0.5 to vdd+0.5 v input protection diode current iik - 20 ma output parasitic diode current iok 20 ma output current iout 25 ma vdd/gnd current idd, ignd 50 ma power dissipation pd 150 mw storage temperature tstg -65 to +150 c elm7sh04xb is cmos inverter which is suitable for battery-operated devices because of its low voltage and ultra high speed operation. the low power consumption contributes to longer battery life, which allows long time operation of devices. the internal circuit which provides high noise immunity and stable output is composed of 3 stages, including buffered output. ? same electrical characteristic and high speed operation as 74vhc series ? low consumption current : idd=1.0a(max.)(top=25 c) ? wide power voltage range : 2.0v to 5.5v ? wide input voltage range : vih=5.5v(max.)(vdd=0 to 5.5v) ? high speed : tpd=2ns(typ.)(vdd=5.0v) ? small package : sot-25, sc-70-5(sot-353) ? same function and pin con?guration as elm7sxxb ? cell phones ? digital cameras ? portable electrical appliances like pda, etc. ? computers and peripherals ? digital electrical appliances like lcd tv sets, dvd recorders/players, stb, etc. ? modi?cation inside print board, adjustment of timing, solution to noise ? power voltage change from 5v to 3v elm7sh 0 4 x b - el a b c d 3 -
2 pin con?guration top view dc electrical characteristics suggested operating condition parameter symbol limit unit power voltage vdd 2.0 to 5.5 v input voltage vin 0 to 5.5 v output voltage vout 0 to vdd v operating temperature top -40 to +85 c high-input down-time tr, tf vdd=3.3 0.3v 0 to 200 ns vdd=5.0 0.5v 0 to 100 pin no. pin name 1 nc 2 iny 3 gnd 4 outx 5 vdd input output iny outx low high high low high speed cmos logic ic elm7sh04xb inverter parameter sym. vdd top=25c top=-40 to +85c unit condition min. typ. max. min. max. input voltage vih 2.0 1.50 1.50 v 3.0 2.10 2.10 5.5 3.85 3.85 vil 2.0 0.50 0.50 v 3.0 0.90 0.90 5.5 1.65 1.65 output voltage voh 2.0 1.90 2.00 1.90 v vin=vil ioh=-50a 3.0 2.90 3.00 2.90 4.5 4.40 4.50 4.40 3.0 2.58 2.48 ioh=-4ma 4.5 3.94 3.80 ioh=-8ma vol 2.0 0.10 0.10 v vin=vih iol=50a 3.0 0.10 0.10 4.5 0.10 0.10 3.0 0.36 0.44 iol=4ma 4.5 0.36 0.44 iol=8ma input current iin 5.5 -0.1 0.1 -1.0 1.0 a vin=vdd or gnd static current idd 5.5 1.0 10.0 a vin=vdd or gnd 3 - 1 2 3 5 4
3 ac electrical characteristics test circuit measured wave pattern marking * output should be opened when measuring current consumption. sot-25 sym. mark content a f elm7sh series b 5 elm7sh04xb c a to z (except i, o, x) lot no. sc-70-5 tr=tf=3ns parameter sym. vdd cl top=25c top=-40 to +85c unit condition min. typ. max. min. max. propagation delay-time tplh 3.3 0.3 15 2.7 7.1 1.0 8.5 ns refer to test circuit tphl 2.5 7.1 1.0 8.5 tplh 3.3 0.3 50 4.1 10.6 1.0 12.0 tphl 3.9 10.6 1.0 12.0 tplh 5.0 0.5 15 2.1 5.5 1.0 6.5 tphl 2.0 5.5 1.0 6.5 tplh 5.0 0.5 50 3.2 7.5 1.0 8.5 tphl 3.0 7.5 1.0 8.5 input capacity cin 5.0 2.0 10.0 10.0 pf vin=vdd or gnd equivalent inner capacity cpd 8.9 pf f=1mhz * cpd is ic's inner equivalent capacity which is calculated from non-loaded operating current consumption referred to test circuit. averaged operating current consumption at non load is calculated as following formula: idd(opr)=cpd ? vdd ? fin+idd 3 - high speed cmos logic ic elm7sh04xb inverter a b c 3 n s 3 n s t p h l 5 0 % 5 0 % 9 0 % 9 0 % 1 0 % 1 0 % 5 0 % 5 0 % i n p u t t p l h v d d g n d v o h v o l o u t p u t b c a p u l s e o s c i l l a t o r v d d o u t p u t c l i n p u t 5 0 ?
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