unisonic technologies co., ltd mmbt1015 pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2005 unisonic technologies co., ltd qw-r206-015,f low frequency pnp amplifier transistor ? features * collector-emitter voltage: bv ceo =-50v * collector current up to 150ma * high h fe linearity * complement to mmbt1815 lead-free: mmbt1015l halogen-free: mmbt1015g ? ordering information ordering number pin assignment normal lead free halogen free package 1 2 3 packing mmbt1015-x-ac3-r mmbt1015l-x-ac3-r mmbt 1015g-x-ac3-r sot-113 e b c tape reel mmbt1015-x-ae3-r mmbt1015l-x-ae3-r mmbt1015g-x-ae3-r sot-23 e b c tape reel mmbt1015-x-al3-r mmbt1015l-x-al3-r mmbt 1015g-x-al3-r sot-323 e b c tape reel mmbt1015-x-an3-r mmbt1015l-x-an3-r mmbt 1015g-x-an3-r sot-523 e b c tape reel ? marking package marking y gr bl sot-23 a4y l: lead free g: halogen free a4g l: lead free g: halogen free a4b l: lead free g: halogen free sot-113 sot-323 sot-523 a4 l: lead free g: halogen free
mmbt1015 pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-015,f ? absolute maximum rating ( ta=25 c , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -50 v emitter-base voltage v ebo -5 v sot-23 250 mw collector dissipation sot-523/sot-113/sot-323 p c 200 mw collector current i c -150 ma base current i b -50 ma junction temperature t j 125 storage temperature t stg -55 ~ +150 note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta=25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo ic = -100 a, i e = 0 -50 v collector-emitter breakdown voltage bv ceo ic = -10ma, i b = 0 -50 v emitter-base breakdown voltage bv ebo i e = -10 a, ic = 0 -5 v collector-emitter satu ration voltage v ce(sat) ic = -100ma, i b = -10ma -0.1 -0.3 v base-emitter satura tion voltage v be(sat) ic = -100ma, i b = -10ma -1.1 v collector cut-off current i cbo v cb = -50v, i e = 0 -100 na emitter cut-off current i ebo v eb = -5v, ic = 0 -100 na h fe1 v ce = -6v, ic = -2ma 120 700 dc current gain h fe2 v ce = -6v, ic = -150ma 25 transition frequency f t v ce = -10v, ic = -1ma 80 mhz output capacitance c ob v cb = -10v, i e = 0, f = 1mhz 4.0 7.0 pf noise figure nf ic = -0.1ma, v ce = -6v r g = 1k , f = 100hz 0.5 6 db ? classification of h fe1 rank y gr bl range 120-240 200-400 350-700
mmbt1015 pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-015,f ? typical characteristics static characteristics collector-emitter voltage ( v) -0 -4 -8 -12 -16 -20 0 -10 -20 -30 -40 -50 i b =-50 a i b =-100 a i b =-150 a i b =-200 a i b =-250 a i b =-300 a dc current gain collector current, ic (ma) 10 2 10 1 10 0 10 3 -10 3 -10 2 -10 1 -10 0 -10 -1 v ce =-6v
mmbt1015 pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-015,f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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