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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SC1846 description with to-126 package complement to type 2sa885 low collector saturation applications for medium output power amplification pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximun ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 45 v v ceo collector-emitter voltage open base 35 v v ebo emitter-base voltage open collector 5 v i c collector current (dc) 1 a i cm collector current-peak 1.5 a 1.2* 1 p c collector power dissipation t c =25 5* 2 w t j junction temperature 150 t stg storage temperature -55~150 note) *1: without heat sink *2: with a 100 100 2 mm a1 heat sink
savantic semiconductor product specification 2 silicon npn power transistors 2SC1846 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =2ma;i b =0 35 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 45 v v cesat collector-emitter saturation voltage i c =0.5a ;i b =50ma 0.5 v i cbo collector cut-off current v cb =20v; i e =0 0.1 a i ceo collector cut-off current v ce =20v; i b =0 100 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.5a ; v ce =10v 85 340 h fe-2 dc current gain i c =1a ; v ce =5v 50 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 20 pf f t transition frequency i c =50ma ; v cb =10v,f=200mhz 200 mhz h fe-1 classifications q r s 85-170 120-240 170-340 savantic semiconductor product specification 3 silicon npn power transistors 2SC1846 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC1846 |
Price & Availability of 2SC1846
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