15 high speed gaalas infrared emitter OPE5T87 the OPE5T87 is gaalas infrared emitting diode dimensions (unit : mm) that is designed for high power, low forward voltage and high speed rise / fall time. this device is optimized for speed and efficiency at emission wavelength 880nm and has a high radiant efficiency over a wide range of forward current. this device is packaged t1-3/4 plastic package and has narrow beam angle with lensed package and cup frame. especially this device is suited as the emitter of data transmission without cable. features ? ultra high-speed : 25ns rise time ? 880nm wavelength ? narrow beam angle ? low forward voltage ? high power and high reliability ? available for pulse operating applications ? emitter of irda ? ir audio and telephone ? high speed ir communication ? ir lans ? available for wireless digital data transmission storage ? condition : 5 c~35 c,r.h.60% ? terms : within 3 months from production date ? remark : once the package is opened, the products should be used within a day. otherwise, it should be keeping in a damp proof box with desiccants. * please take proper steps in order to secure reliability and safety in required conditions and environments for this device. maximum ratings (ta=25 c ) item symbol rating unit power dissipation p d 150 forward current i f 100 pulse forward current 1 i fp 1.0 a reverse voltage v r 4.0 operating temp. topr. -25~ +85 c solderin g tem p . 2 tsol. 260 . c 1 .duty ratio = 1/100, pulse width=0.1ms. 2 .lead soldering temperature (2 mm from case for 5sec.). electro-opticalcharacteristics (ta=25 c) item symbol conditions min. typ. max. unit forward voltage v f i f =50 1.5 2.0 v reverse current i r v r =4v 10 capacitance ct f=1 20 radiant intensity ie i f =50 50 120 / peak emission wavelength p i f =50 880 spectral bandwidth 50% i f =50
45 half angle i f =50
8 deg. optical rise & fall time(10%~90%) tr/tf i f =50
25/15 ns cut off frequency *3 fc i f
14 mhz *3 . 10logpo(fc mhz )/po(0.1 mhz )=-3 2- 0.5 23.0 min cathode anode 9.0 7.8 1.5 max 2.54 1 .0 min 5.8 4.8 tolerance : 0.2m m
16 high speed gaalas infrared emitter OPE5T87 relative radiant intensity vs. emission wavelength. 1.0 0.8 0.6 0.4 0.2 0.0 700 750 800 850 900 950 emission wavelen g th ( nm ) ta=25 forward current vs. ambient temp. -20 0 20 40 60 80 100 100 80 60 40 20 0 ambient temperature ta( ) relative radiant intensity vs. ambient temp. 3 2 1 0.8 0.5 0.3 0.2 0.1 -20 0 20 40 60 80 100 ambient temperature ta( ) i f =50ma radiant intensity vs. forward current. ta=25 200 100 50 30 10 5 3 1 0.5 0.3 0.1 1 3 5 10 30 5 0 100 2 00 500 forward current if(ma) ta=25 forward current vs. forward voltage 100 50 30 20 10 5 4 3 2 1 1.0 1.1 1.2 1.3 1.4 1.5 1.6 forward voltage v f (v) ta=25 angular displacement vs relative radiant intensity 20 30 40 50 60 70 80 -20 -30 -40 -50 -60 -70 -80 -90 -10 10 0 90 ta=25 1.0 0.5 0 0.5 1.0 relative radiant intensity
|
