application high speed power switching features ? high breakdown voltage (v dss = 1500 v) high speed switching no secondary breakdown suitable for switching regulator, dc ?dc converter 1 2, 4 3 hdpak 1 2 3 4 1 2 3 4 1. gate 2. drain 3. source 4. drain table 1 absolute maximum ratings (ta = 25?) item symbol ratings unit drain to source voltage v dss 1500 v gate to source voltage v gss ?0 v drain current i d 2.5 a drain peak current i d(pulse) *7 a body?rain diode reverse drain current i dr 2.5 a channel dissipation pch** 100 w channel temperature tch 150 ? storage temperature tstg ?5 to +150 ? * pw 10 ?, duty cycle 1 % ** value at tc = 25 ? 2sk2278 l , 2sk2278 s silicon n channel mos fet
2sk2278 l , 2sk2278 s table 2 electrical characteristics (ta = 25?) item symbol min typ max unit test conditions drain to source breakdown v (br)dss 1500 v i d = 10 ma, v gs = 0 voltage gate to source leak current i gss 1 av gs = ?0 v, v ds = 0 zero gate voltage drain current i dss 500 ? v ds = 1200 v, v gs = 0 gate to source cutoff voltage v gs(off) 2.0 4.0 v i d = 1 ma, v ds = 10 v static drain to source on state r ds(on) ? 12 ? i d = 2 a resistance v gs = 15 v * forward transfer admittance |y fs | 0.45 0.75 s i d = 1 a v ds = 20 v * input capacitance ciss 990 pf v ds = 10 v output capacitance coss 125 pf v gs = 0 reverse transfer capacitance crss 60 pf f = 1 mhz turn?n delay time t d(on) 17 ns i d = 2 a rise time t r 70 ns v gs = 10 v turn?ff delay time t d(off) 110 ns r l = 15 ? fall time t f ?0 ns body?rain diode forward v df 0.9 v i f = 2 a, v gs = 0 voltage body?rain diode reverse t rr 1750 s i f = 2 a, v gs = 0, recovery time dif / dt = 100 a / ? * pulse test see characteristic curves of 2sk1317.
120 80 40 channel dissipation pch (w) 50 100 150 case temperature tc (?) power vs. temperature derating 0 2sk2278 l , 2sk2278 s
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