advance technical information g c e to-247 g c e min typ max 1200 4.5 5.5 6.5 2.5 3.0 3.1 3.7 0.6 3.0 100 characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 0.6ma) gate threshold voltage (v ce = v ge , i c = 350a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 25c) collector-emitter on voltage (v ge = 15v, i c = i c2 , t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) gate-emitter leakage current (v ge = 20v, v ce = 0v) symbol bv ces v ge (th) v ce (on) i ces i ges maximum ratings (igbt) all ratings: t c = 25c unless otherwise specified. static electrical characteristics (igbt) unit volts ma na symbol v ces v cgr v ge i c1 i c2 i cm1 i cm2 p d t j ,t stg t l parameter collector-emitter voltage collector-gate voltage (r ge = 20k ? ) gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c pulsed collector current 1 @ t c = 110c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. APT11GF120BRD1 1200 1200 20 22 11 44 22 125 -55 to 150 300 unit volts amps watts c 052-6258 rev f 1-2003 APT11GF120BRD1 1200v 22a the fast igbt ? is a new generation of high voltage power igbts. using non- punch through technology the fast igbt? combined with an apt free- wheeling ultrafast recovery epitaxial diode (fred) offers superior ruggedness and fast switching speed. ? low forward voltage drop ? high freq. switching to 20khz ? low tail current ? ultra low leakage current ? rbsoa and scsoa rated ? ultrafast soft recovery antiparallel diode fast igbt & fred caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com
advance technical information symbol c ies c oes c res q g q ge q gc t d (on) t r t d (off) t f t d (on) t r t d (off) t f e on e off e ts t d (on) t r t d (off) t f e ts gfe dynamic characteristics (igbt) APT11GF120BRD1 unit c/w oz gm lb?in n?m min typ max 1.00 2.0 40 0.22 6.1 10 1.1 characteristic junction to case (igbt) junction to case (fred) junction to ambient package weight mounting torque using a 6-32 or 3mm binding head machine screw symbol r jc r ja w t torque thermal and mechanical characteristics (igbt and fred) test conditions capacitance v ge = 0v v ce = 25v f = 1 mhz gate charge v ge = 15v v cc = 0.5v ces i c = i c2 resistive switching (25c) v ge = 15v v cc = 0.8v ces i c = i c2 r g = 10 ? inductive switching (125c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +125c inductive switching (25c) v clamp (peak) = 0.66v ces v ge = 15v i c = i c2 r g = 10 ? t j = +25c v ce = 20v, i c = i c2 min typ max 600 800 90 130 38 65 60 8 38 10 50 55 110 13 20 125 90 .5 1.0 1.5 13 20 110 90 1.0 4.7 unit pf nc ns ns mj ns mj s 052-6258 rev f 1-2003 characteristic input capacitance output capacitance reverse transfer capacitance total gate charge 2 gate-emitter charge gate-collector ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on delay time rise time turn-off delay time fall time turn-on switching energy 3 turn-off switching energy total switching losses 3 turn-on delay time rise time turn-off delay time fall time total switching losses 3 forward transconductance 1 repetitive rating: pulse width limited by maximum junction temperature. 2 see mil-std-750 method 3471 3 switching losses include the fred and igbt. apt reserves the right to change, without notice, the specifications and information contained herein.
advance technical information characteristic / test conditions maximum d.c. reverse voltage maximum peak repetitive reverse voltage maximum working peak reverse voltage maximum average forward current (t c = 85c, duty cycle = 0.5) rms forward current non-repetitive forward surge current (t j = 45c, 8.3ms) symbol v r v rrm v rwm i f (av) i f (rms) i fsm symbol v f i rm l s characteristic / test conditions i f = 15a maximum forward voltage i f = 30a i f = 15a, t j = 150c maximum reverse leakage current v r = v r rated v r = v r rated, t j = 125c series inductance (lead to lead 5mm from base) static electrical characteristics (fred) unit volts amps unit volts a nh min typ max 2.5 2.5 2.2 250 500 10 APT11GF120BRD1 1200 15 29 110 maximum ratings (fred) all ratings: t c = 25c unless otherwise specified. ultrafast soft recovery parallel diode 052-6258 rev f 1-2003 maximum reverse leakage current min typ max 48 tbd 60 132 192 211 4.0 tbd 7 tbd 126 523 12 18 166 81 unit ns amps nc volts a/s characteristic reverse recovery time, i f = 1.0a, di f /dt = -15a/s, v r = 30v, t j = 25c reverse recovery time t j = 25c i f = 15a, di f /dt = -100a/s, v r = 650v t j = 100c forward recovery time t j = 25c i f = 15a, di f /dt = 100a/s, v r = 650v t j = 100c reverse recovery current t j = 25c i f = 15a, di f /dt = -100a/s, v r = 650v t j = 100c recovery charge t j = 25c i f = 15a, di f /dt = -100a/s, v r = 650v t j = 100c forward recovery voltage t j = 25c i f = 15a, di f /dt = 100a/s, v r = 650v t j = 100c rate of fall of recovery current t j = 25c i f = 15a, di f /dt = -100a/s, v r =650v t j = 100c dynamic characteristics (fred) symbol t rr1 t rr2 t rr3 t fr1 t fr2 i rrm1 i rrm2 q rr1 q rr2 v fr1 v fr2 dim/dt APT11GF120BRD1
advance technical information APT11GF120BRD1 052-6258 rev f 1-2003 pearson 411 current transformer 0.5 i rrm di f /dt adjust 30 h d.u.t. +15v -15v 0v v r dimensions in millimeters and (inches) 4 3 1 2 5 5 0.75 i rrm t rr / q rr waveform zero 6 1 2 3 4 6 di f /dt - current slew rate, rate of forward current change through zero crossing. i f - forward conduction current i rrm - peak reverse recovery current. t rr - reverse recovery time measured from point of i f q rr - area under the curve defined by i rrm and t rr . dim/dt - maximum rate of current change during the trailing portion of t rr. current falling through zero to a tangent line { dim/dt } extrapolated through zero defined by 0.75 and 0.50 i rrm . 6 figure 25, diode reverse recovery test circuit and waveforms figure 8, diode reverse recovery waveform and definitions q rr = 1 / 2 ( t rr . i rrm ) 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) bsc 3.55 (.140) 3.81 (.150) 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) 2-plcs. collector (cathode) emitter (anode) gate collector (cathode) to-247 package outline
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