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  sot23 silicon planar high speed switching series diode pair issue 2 - may 1995 pin configurations partmarking details bav99...........a7 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetitive peak reverse voltage v rrm 70 v average rectified forward current ( over any 20ms period) i f(av) 100 ma repetitive peak forward current i frm 200 ma peak forward surge current i fm(surge) 500 ma (dc) power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f =1ma i f =10ma i f =50ma i f =100ma reverse current i r 30 2.5 50 m a m a m a v r =25v, t amb =150c v r =70v v r =70v, t amb =150c diode capacitance c d 1.5 pf f=1mhz forward recovery voltage v fr 1.75 v switched to i f =10ma, t r =20ns reverse recovery time t rr 6 ns switched from if=10ma, v r =1v r l =100 w ,i r =1ma spice parameter data is available upon request for this device bav99 page no 1 2 3 1 3 2 sot23 sampling oscilloscope c< 1.0pf r in =50 w v in =1v r s =50 w pulse generator t rr i f i r =1ma recovery time equivalent test circuit output waveform 1k w 0.2 m f v b 0.1 m f dut + - pulse rise time < = 0.5ns pulse width = 1 00 ns oscilloscope rise time < 0.35ns adjust v b for i f =10ma switching circuit bav99 ? above switching diagram also applies to device types ? bal99 ? bar99 ? baw56 ? bav70
sot23 silicon planar high speed switching series diode pair issue 2 - may 1995 pin configurations partmarking details bav99...........a7 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetitive peak reverse voltage v rrm 70 v average rectified forward current ( over any 20ms period) i f(av) 100 ma repetitive peak forward current i frm 200 ma peak forward surge current i fm(surge) 500 ma (dc) power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f =1ma i f =10ma i f =50ma i f =100ma reverse current i r 30 2.5 50 m a m a m a v r =25v, t amb =150c v r =70v v r =70v, t amb =150c diode capacitance c d 1.5 pf f=1mhz forward recovery voltage v fr 1.75 v switched to i f =10ma, t r =20ns reverse recovery time t rr 6 ns switched from if=10ma, v r =1v r l =100 w ,i r =1ma spice parameter data is available upon request for this device bav99 page no 1 2 3 1 3 2 sot23 sampling oscilloscope c< 1.0pf r in =50 w v in =1v r s =50 w pulse generator t rr i f i r =1ma recovery time equivalent test circuit output waveform 1k w 0.2 m f v b 0.1 m f dut + - pulse rise time < = 0.5ns pulse width = 1 00 ns oscilloscope rise time < 0.35ns adjust v b for i f =10ma switching circuit bav99 ? above switching diagram also applies to device types ? bal99 ? bar99 ? baw56 ? bav70


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