CPH5809 no.7267-1/5 features ? the CPH5809 composite device consists of follow- ing two devices to facilitate high-density mounting. one is an n-channel mosfet that features low on- resistance, ultrahigh-speed switching, and low driving voltage. the other is a schottky barrier diode that features short reverse recovery time and low forward voltage. ? each device incorporated in the CPH5809 is equiva- lent to the mch3411 and to the sbs005, respectively. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7267 CPH5809 package dimensions unit : mm 2171 [CPH5809] 83002 ts im ta-3482 mosfet : n-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss 30 v gate-to-source voltage v gss 10 v drain current (dc) i d 3a drain current (pulse) i dp pw 10 m s, duty cycle 1% 12 a allowable power dissipation p d mounted on a ceramic board (600mm 2 5 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg --55 to +125 c [sbd] repetitive peak reverse voltage v rrm 30 v nonrepetitive peak reverse surge voltage v rsm 30 v average output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj --55 to +125 c storage temperature tstg --55 to +125 c marking : qk any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5 preliminary
CPH5809 no.7267-2/5 electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0 30 v zero-gate voltage drain current i dss v ds =30v, v gs =0 1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 m a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance ? yfs ? v ds =10v, i d =1.5a 3.5 5.0 s static drain-to-source on-state resistance r ds (on)1 i d =1.5a, v gs =4v 69 90 m w r ds (on)2 i d =1a, v gs =2.5v 84 118 m w input capacitance ciss v ds =10v, f=1mhz 270 pf output capacitance coss v ds =10v, f=1mhz 38 pf reverse transfer capacitance crss v ds =10v, f=1mhz 23 pf turn-on delay time t d (on) see specified test circuit. 10 ns rise time t r see specified test circuit. 30 ns turn-off delay time t d (off) see specified test circuit. 42 ns fall time t f see specified test circuit. 52 ns total gate charge qg v ds =10v, v gs =4v, i d =3.0a 3.7 nc gate-to-source charge qgs v ds =10v, v gs =4v, i d =3.0a 0.7 nc gate-to-drain miller charge qgd v ds =10v, v gs =4v, i d =3.0a 0.5 nc diode forward voltage v sd i s =3.0a, v gs =0 0.85 1.2 v [sbd] reverse voltage v r i r =1ma 30 v forward voltage v f 1i f =0.5a 0.35 0.4 v v f 2i f =1a 0.42 0.47 v reverse current i r v r =15v 500 m a interterminal capacitance c v r =10v, f=1mhz cycle 35 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 15 ns thermal resistance rthj-a mounted on a ceramic board (600mm 2 5 0.8mm) 110 c / w electrical connection switching time test circuit t rr test circuit [mosfet] [sbd] pw=10 m s d.c. 1% p. g 50 w g s d i d =1.5a r l =10 w v dd =15v v out CPH5809 v in 4v 0v v in duty 10% 50 100 10 --5v t rr 100ma 100ma 10ma 10 s 543 12 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode (top view)
CPH5809 no.7267-3/5 25 50 75 100 125 150 0 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 1 2 3 4 5 0 --60 --40 --20 0 20 40 60 80 100 120 140 r ds (on) -- v gs it04634 0 0.1 0.5 1.0 1.5 2.0 2.5 3.0 0 0 0.2 0.3 0.4 1.0 0.5 0.6 0.7 0.8 0.9 i d -- v ds 1.5v 2.5v 2.0v 10.0v it04632 i d -- v gs v ds =10v it04633 r ds (on) -- ta it04635 024681012 50 100 150 200 300 250 ta=25 c 1.5a i d =1.0a i d =1.0a, v gs =2.5v i d =1.5a, v gs =4.0v 4.0v 4.5v v gs =1.0v 25 c --25 c 75 c ta=75 c ta= -- 2 5 c 25 c [mosfet] [mosfet] [mosfet] [mosfet] 0 5 10 15 20 25 30 100 1000 7 5 3 2 7 5 3 2 10 0.1 23 5 23 5 7 7 1.0 sw time -- i d v dd = 15 v v gs = 4 v t d (on) t d (off) t r t f it04638 ciss, coss, crss -- v ds it04636 0.01 23 5 77 0.1 23 57 1.0 23 5 23 5 7 0.001 7 5 0.01 3 2 7 5 0.1 3 2 7 5 1.0 3 2 10 10 2 7 5 3 7 5 3 2 100 ? y fs ? -- i d v ds =10v 75 c ta= --25 c it04637 0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.01 10 7 5 3 2 0.1 7 5 3 2 1.0 7 5 3 2 7 5 3 2 i f -- v sd v gs =0 f=1mhz ciss coss crss it04639 25 c --25 c 25 c ta=75 c [mosfet] [mosfet] [mosfet] [mosfet] static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c drain current, i d -- a switching time, sw time -- ns drain current, i d -- a forward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v forward current, i f -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf
CPH5809 no.7267-4/5 1.0 0.01 0.1 10 23 5 23 5 7 23 57 23 57 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 v gs -- qg it04640 0 0 20 40 0.2 0.4 0.6 0.8 0.9 1.0 60 80 100 120 140 160 p d -- ta it04655 a s o 0.01 10 1.0 0.1 2 3 5 7 2 3 5 7 2 3 5 7 3 2 it04654 operation in this area is limited by r ds (on). 100ms 100 m s dc operation 1ms 10ms <10 m s v ds = 10 v i d = 3 a i dp =12a i d =3a 0 0.3 0.4 0.5 0.1 0.2 0.1 0.01 1.0 7 5 3 2 7 5 3 2 i f -- v f ta=125 c 25 c 75 c it00627 50 c [sbd] [mosfet] [mosfet] [mosfet] 100 c is 20ms t 180 360 q 360 (2) (4) (3) (1) 7 0.01 27 0.1 0 52 23 3 37 1.0 5 12 10 8 6 4 2 i s -- t 2 3 5 100 1000 1.0 10 7 2 3 5 7 2 3 5 7 1.0 10 23 57 23 5 c -- v r f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 30 15 25 520 10 i r -- v r 0 0 0.2 0.4 0.6 0.8 1.0 0.8 0.9 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 p f (av) -- i o ta=125 c 25 c 50 c 75 c 100 c it00628 it00629 it00631 it00630 [sbd] [sbd] [sbd] [sbd] sine wave (1) rectangular wave q =60 (2) rectangular wave q =120 (3) rectangular wave q =180 (4) sine wave q =180 rectangular wave average forward current, i o -- a average forward power dissipation, p f (av) -- w ta=25 c single pulse mounted on a ceramic board(600mm 2 5 0.8mm)1unit gate-to-source voltage, v gs -- v allowable power dissipation, p d -- w drain current, i d -- a total gate charge, qg -- nc ambient temperature, ta -- c drain-to-source voltage, v ds -- v forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- ma mounted on a ceramic board(600mm 2 5 0.8mm)1unit time, t -- s surge forward current, i fsm (peak) -- a current waveform 50hz sine wave reverse voltage, v r -- v interterminal capacitance, c -- pf
CPH5809 no.7267-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2002. specifications and information herein are subject to change without notice. ps
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