summary npn transistor v ceo = 20v; r sat = 47m ; c = 4.5a schottky diode v r = 40v; v f = 500mv (@1a); i c =1a description packaged in the new innovative 3mm x 2mm mlp this combination dual comprises an ultra low saturation npn transistor and a 1a schottky barrier diode. this excellent combination provides users with highly efficient performance in applications including dc-dc and charging circuits. users will also gain several other key benefits : performance capability equivalent to much larger packages improved circuit efficiency & power levels pcb area and device placement savings lower package height (0.9mm nom) reduced component count features ? extremely low saturation voltage (150mv @1a) ? h fe characterised up to 6a ? i c = 4.5a continuous collector current ? extremely low v f , fast switching schottky ? 3mm x 2mm mlp applications ? dc - dc converters ? mobile phones ? charging circuits ? motor control device marking bs1 zx3cdbs1m832 issue 3- october 2007 mpps? miniature package power solutions 20v npn low saturation transistor and 40v, 1a schottky diode combination dual 1 cathode anode b c e device reel tape width quantity per reel ZX3CDBS1M832TA 7 8mm 3000 zx3cdbs1m832tc 13 8mm 10000 ordering information 3mm x 2mm dual die mlp 3mm x 2mm dual mlp underside view pinout
zx3cdbs1m832 issue 3- october 2007 2 parameter symbol value unit transistor collector-base voltage v cbo 40 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 7.5 v peak pulse current i cm 12 a continuous collector current (a)(f) i c 4.5 a continuous collector current (b)(f) i c 5a base current i b 1000 ma power dissipation at ta=25c (a)(f) linear derating factor p d 1.5 12 w mw/c power dissipation at ta=25c (b)(f) linear derating factor p d 2.45 19.6 w mw/c power dissipation at ta=25c (c)(f) linear derating factor p d 1 8 w mw/c power dissipation at ta=25c (d)(f) linear derating factor p d 1.13 9 w mw/c power dissipation at ta=25c (d)(g) linear derating factor p d 1.7 13.6 w mw/c power dissipation at ta=25c (e)(g) linear derating factor p d 3 24 w mw/c storage temperature range t stg -55 to +150 c junction temperature t j 150 c absolute maximum ratings. parameter symbol value unit junction to ambient (a)(f) r ja 83 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w thermal resistance notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz we ight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 500mw.
zx3cdbs1m832 issue 3- october 2007 3 0.1 1 10 0.01 0.1 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 note (a)(f) 100us 100ms 1s v ce(sat) limited 1ms safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 1oz cu note (d)(f) 1oz cu note (d)(g) 2oz cu note (a)(f) 2oz cu note (e)(g) derating curve t amb =25c max power dissipation (w) temperature (c) note (a)(f) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz copper note (g) 1oz copper note (f) 2oz copper note (f) 2oz copper note (g) thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz copper note (g) 2oz copper note (g) 1oz copper note (f) 2oz copper note (f) power dissipation v board area t amb =25c t jmax =150c continuous p d dissipation (w) boardcuarea(sqcm) transistor typical characteristics
zx3cdbs1m832 issue 3- october 2007 4 parameter symbol value unit schottky diode continuous reverse voltage v r 40 v forward voltage @ i f =1000ma(typ) v f 425 mv forward current i f 1850 ma average peak forward current d=50% i fav 3a non repetitive forward current t 100 s t 10ms i fsm 12 7 a a power dissipation at ta=25c (a)(f) linear derating factor p d 1.2 12 w mw/c power dissipation at ta=25c (b)(f) linear derating factor p d 2 20 w mw/c power dissipation at ta=25c (c)(f) linear derating factor p d 0.8 8 w mw/c power dissipation at ta=25c (d)(f) linear derating factor p d 0.9 9 w mw/c power dissipation at ta=25c (d)(g) linear derating factor p d 1.36 13.6 w mw/c power dissipation at ta=25c (e)(g) linear derating factor p d 2.4 24 w mw/c storage temperature range t stg -55 to +150 c junction temperature t j 125 c absolute maximum ratings. parameter symbol value unit junction to ambient (a)(f) r ja 83 c/w junction to ambient (b)(f) r ja 51 c/w junction to ambient (c)(f) r ja 125 c/w junction to ambient (d)(f) r ja 111 c/w junction to ambient (d)(g) r ja 73.5 c/w junction to ambient (e)(g) r ja 41.7 c/w thermal resistance notes (a) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditio ns with all exposed pads attached. the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) for a dual device surface mounted on 8 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with minimal lead connections only. (d) for a dual device surface mounted on 10 sq cm single sided 1oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (e) for a dual device surface mounted on 85 sq cm single sided 2oz copper on fr4 pcb, in still air conditions with all exposed pads attached attached . the copper area is split down the centre line into two separate areas with one half connected to each half of the dual device . (f) for a dual device with one active die. (g) for dual device with 2 active die running at equal power. (h) repetitive rating - pulse width limited by max junction temperature. refer to transient thermal impedance graph. (i) the minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. the thermal resistance for a dual device mounted on 1.5mm thick fr4 board using minimum copper 1 oz we ight, 1mm wide tracks and one half of the device active is rth = 250c/w giving a power rating of ptot = 400mw.
zx3cdbs1m832 issue 3- october 2007 5 0 25 50 75 100 125 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1oz cu note (d)(f) 1oz cu note (d)(g) 2oz cu note (a)(f) 2oz cu note (e)(g) derating curve t amb =25c max power dissipation (w) temperature (c) note (a)(f) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz copper note (g) 1oz copper note (f) 2oz copper note (f) 2oz copper note (g) thermal resistance v board area thermal resistance (c/w) boardcuarea(sqcm) 1oz copper note (g) 2oz copper note (g) 1oz copper note (f) 2oz copper note (f) power dissipation v board area t amb =25c t jmax =125c continuous p d dissipation (w) board cu area (sqcm) schottky typical characteristics
zx3cdbs1m832 issue 3- october 2007 6 parameter symbol min. typ. max. unit conditions. transistor electrical characteristics collector-base breakdown voltage v (br)cbo 40 100 v i c =100 a collector-emitter breakdown voltage v (br)ceo 20 27 v i c =10ma* emitter-base breakdown voltage v (br)ebo 7.5 8.2 v i e =100 a collector cut-off current i cbo 25 na v cb =32v emitter cut-off current i ebo 25 na v eb =6v collector emitter cut-off current i ces 25 na v ces =16v collector-emitter saturation voltage v ce(sat) 8 90 115 190 210 15 150 135 250 270 mv mv mv mv mv i c =0.1a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =50ma* i c =3a, i b =100ma* i c =4.5a, i b =125ma* base-emitter saturation voltage v be(sat) 0.98 -1.05 v i c =4.5a, i b =125ma* base-emitter turn-on voltage v be(on) 0.88 -0.95 v i c =4.5a, v ce =2v* static forward current transfer ratio h fe 200 300 200 100 400 450 360 180 i c =10ma, v ce =2v* i c =0.2a, v ce =2v* i c =2a, v ce =2v* i c =6a, v ce =2v* transition frequency f t 100 140 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 23 30 pf v cb =10v, f=1mhz turn-on time t (on) 170 ns v cc =10v, i c =3a i b1 =i b2 =10ma turn-off time t (off) 400 ns schottky diode electrical characteristics reverse breakdown voltage v (br)r 40 60 v i r =300 a forward voltage v f 240 265 305 355 390 425 495 420 270 290 340 400 450 500 600 ? mv mv mv mv mv mv mv mv i f =50ma* i f =100ma* i f =250ma* i f =500ma* i f =750ma* i f =1000ma* i f =1500ma* i f =1000ma,t a =100c* reverse current i r 50 100 av r =30v diode capacitance c d 25 pf f=1mhz,v r =25v reverse recovery time t rr 12 ns switched from i f = 500ma to i r = 500ma measured at i r = 50ma electrical characteristics (at t amb = 25c unless otherwise stated). *measured under pulsed conditions.
zx3cdbs1m832 issue 3- october 2007 7 1m 10m 100m 1 10 1m 10m 100m 1m 10m 100m 1 10 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 v ce(sat) vi c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) vi c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe vi c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) vi c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) vi c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe ) transistor typical characteristics
zx3cdbs1m832 issue 3- october 2007 8 schottky typical characteristics
zx3cdbs1m832 issue 3- october 2007 9 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc lansdowne road, chadderton oldham, ol9 9ty united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2004 controlling dimensions in millimetres approx. converted dimensions in inches mlp832 package outline (3mm x 2mm micro leaded package) dim millimetres inches dim millimetres inches min. max. min. max. min. max. min. max. a 0.80 1.00 0.031 0.039 e 0.65 ref 0.0256 bsc a1 0.00 0.05 0.00 0.002 e 2.00 bsc 0.0787 bsc a2 0.65 0.75 0.0255 0.0295 e2 0.43 0.63 0.017 0.0249 a3 0.15 0.25 0.006 0.0098 e4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 l 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 l2 0.1250.000.005 d 3.00 bsc 0.118 bsc r 0.075 bsc 0.0029 bsc d2 0.82 1.02 0.032 0.040 0 12 0 12 d3 1.01 1.21 0.0397 0.0476 mlp832 package dimensions
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