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inchange semiconductor product specification silicon npn power transistors 2SD1023 description ? with to-220 package ? high dc current gain ? darlington pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 200 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current-continuous 5 a i cm collector current-peak 8 a i b base current 0.5 a i bm base current-peak 1 a p t total power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 4.17 ??/w
inchange semiconductor product specification 2 silicon npn power transistors 2SD1023 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =3a; i b =5ma 1.5 v v besat base-emitter saturation voltage i c =3a ;i b =5ma 2.0 v i ceo collector cut-off current v ce =200v; i b =0 0.1 ma i cbo collector cut-off current v cb =200v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 5 ma h fe dc current gain i c =3a ; v ce =3v 1500 30000 f t transition frequency i c =0.5a ; v ce =10v 20 mhz t on turn-on time 2 | s t s storage time 8 | s t f fall time i c =3a; i b =5ma r l =10 |? v bb2 =4v 5 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SD1023 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm)

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