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| inchange semiconductor isc product specification isc silicon pnp power transistor 2SB628 description c ollector-emitter breakdown voltage- : v (br)ceo = -160v(min) complement to type 2sd608 applications designed for audio frequency power amplifier and low speed switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage -160 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -5 v i c collector current-continuous -1.5 a i cm collector current-peak -3.0 a i b b base current-continuous -0.3 a collector power dissipation @ t a =25 1.5 p c collector power dissipation @ t c =25 20 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp power transistor 2SB628 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = -1a; i b = -0.1a b -2.0 v v be (sat) base-emitter saturation voltage i c = -1a; i b = -0.1a b -1.5 v i cbo collector cutoff current v cb = -120v; i e = 0 -1.0 a i ebo emitter cutoff current v eb = -3v; i c = 0 -1.0 a h fe-1 dc current gain i c = -5ma; v ce = -5v 25 h fe-2 dc current gain i c = -0.3a; v ce = -5v 40 200 c ob collector output capacitance i e = 0; v cb = -10v; f= 1mhz 35 pf f t current-gain?bandwidth product i c = -0.1a; v ce = -5v 40 mhz ? h fe- 2 classifications s r q 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
Price & Availability of 2SB628
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