for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc816lp4e smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz v00.1108 general description features functional diagram typical applications electrical specifcations, t a = +25 c, rbias 1, 2 = 10k ohms*, vdd = vdd1, vdd2 = +5v, idd = idd1, idd2 the h m c816 lp 4 e is a gaas ph em t dual channel l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 230 and 660 m hz. the amplifer has been optimized to provide 0.5 db noise fgure, 22 db gain and +37 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent with minimal external matching and bias decoupling components. the h m c816 lp 4 e shares the same package and pinout with the h m c817- lp 4 e & h m c818 lp 4 e l nas. the h m c817 lp 4 e can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of each channel of the l na for each application. l ow noise f igure: 0.5 db high gain: 22 db high o utput ip 3: +37 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 24 l ead 4x4mm q fn p ackage: 16 mm 2 the h m c816 lp 4 e is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emtocells ? p ublic s afety r adio ? m ulti-channel applications p arameter vdd = +3v vdd = +5v units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 230 - 450 450 - 660 230 - 450 450 - 660 m hz gain 17 21 14 17 19 22 15 19 db gain variation o ver temperature 0.001 0.002 0.005 0.007 db/ c noise f igure 0.5 0.9 0.5 0.9 0.5 0.9 0.5 0.9 db i nput r eturn l oss 13 17 15 16 db o utput r eturn l oss 12 10 13 10 db o utput p ower for 1 db compression ( p 1db) 10 14 13 16 15 19 18 21 dbm s aturated o utput p ower ( p sat) 10 15 14 16.5 16 20 18 21 dbm o utput third o rder i ntercept ( ip 3) 26 28 34 37 dbm s upply current ( i dd) 24 34 44 24 34 44 68 97 126 68 97 126 ma * r bias sets current, see application circuit herein
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 input return loss vs. temperature [1] output return loss vs. temperature [1] broadband gain & return loss hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz [1] vdd = 5v [2] vdd = 3v gain vs. temperature [2] gain vs. temperature [1] reverse isolation vs. temperature [1] -25 -20 -15 -10 -5 0 5 10 15 20 25 0.2 0.4 0.6 0.8 1 1.2 1.4 vdd= 5v vdd= 3v response (db) frequency (ghz) s21 s22 s11 14 16 18 20 22 24 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25c +85c - 40c gain (db) frequency (ghz) 14 16 18 20 22 24 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25c +85c - 40c gain (db) frequency (ghz) -20 -15 -10 -5 0 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25c +85c - 40c return loss (db) frequency (ghz) -20 -15 -10 -5 0 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25c +85c - 40c return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25c +85c - 40c reverse isolation (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 p1db vs. temperature psat vs. temperature hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz output ip3 and supply current vs. supply voltage @ 400 mhz [1] m easurement reference plane shown on evaluation p cb drawing. output ip3 vs. temperature noise figure vs. temperature [1] output ip3 and supply current vs. supply voltage @ 500 mhz 0 0.2 0.4 0.6 0.8 1 0.2 0.3 0.4 0.5 0.6 0.7 vdd=5v vdd=3v noise figure (db) frequency (ghz) +85c +25 c -40c 10 12 14 16 18 20 22 24 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) vdd=3v vdd=5v 10 12 14 16 18 20 22 24 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 +25 c +85 c - 40 c psat (dbm) frequency (ghz) vdd=3v vdd=5v 20 25 30 35 40 45 0.2 0.3 0.4 0.5 0.6 0.7 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) vdd=5v vdd=3v 22 24 26 28 30 32 34 36 38 0 18 36 54 72 90 108 126 144 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v) 22 25 28 31 34 37 40 43 0 20 40 60 80 100 120 140 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 ip3 (dbm) idd (ma) voltage supply (v)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 power compression @ 500 mhz [1] hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz power compression @ 500 mhz [2] power compression @ 400 mhz [1] power compression @ 400 mhz [2] [1] vdd = 5v [2] vdd = 3v gain, power & noise figure vs. supply voltage @ 400 mhz gain, power & noise figure vs. supply voltage @ 500 mhz 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 0 5 10 15 20 25 30 35 40 45 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 40 45 -18 -16 -14 -12 -10 -8 -6 -4 -2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 40 45 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 5 10 15 20 25 30 35 40 45 50 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz cross channel isolation [1] output ip3 vs. rbias @ 400 mhz magnitude balance [1] output ip3 vs. rbias @ 500 mhz phase balance [1] [1] vdd = 5v -1 -0.5 0 0.5 1 0.2 0.3 0.4 0.5 0.6 0.7 amplitude balance (db) frequency (ghz) 22 24 26 28 30 32 34 36 38 40 1000 10000 vdd= 3v vdd= 5v ip3 (dbm) rbias (ohms) 500 -40 -30 -20 -10 0 0.2 0.3 0.4 0.5 0.6 0.7 rfin1 to rfout2 rfin2 to rfout1 isolation (db) frequency (ghz) 22 24 26 28 30 32 34 36 38 40 1000 10000 vdd= 3v vdd= 5v ip3 (dbm) rbias (ohms) 500 -2 -1 0 1 2 0.2 0.3 0.4 0.5 0.6 0.7 phase balance (degrees) frequency (ghz) absolute bias register for idd range & recommended bias resistor vdd (v) rbias ? idd (ma) min max r ecommended 3v 4.7k open circuit 10k 34 5v 0 open circuit 820 65 2k 80 3.92k 90 10k 97 with vdd = 3v rbias <4.7k is not recommended and may result in lna becoming conditionally unstable.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz absolute maximum ratings ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s typical supply current vs. vdd (rbias = 10k) drain bias voltage (vdd1, vdd2) +6 v rf input p ower ( rfin1, rfin2) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 17.86 m w /c above 85 c) 1.16 w thermal r esistance (channel to ground paddle) 56 c/w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vdd1, vdd2 (v) idd1, idd2 (ma) 2.7 24 3.0 34 3.3 44 4.5 82 5.0 97 5.5 110 note: amplifer will operate over full voltage range shown above. outline drawing p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [1] h m c816 lp 4 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] h816 xxxx [1] 4-digit lot number xxxx [2] m ax peak refow temperature of 260 c n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n. package information
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz pin number f unction description i nterface schematic 1, 6 rfin1, rfin2 this pins are dc coupled. an off-chip dc blocking capacitor is required. 2, 5, 7, 12, 14, 17, 19, 24 gnd these pins and package bottom must be connected to rf /dc ground. 3, 4, 8 - 10, 21 - 23 n/c no connection required. these pins may be connected to rf /dc ground without affecting performance. 18, 13 rfout1, rfout2 these pins are matched to 50 o hms. 15, 16 res1, res2 these pins are used to set the dc current of each amplifer via external bias resistor. s ee application circuit. 20, 11 vdd1, vdd2 p ower s upply voltages for each amplifer. choke inductor and bypass capacitors are required. s ee application circuit. pin descriptions application circuit
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 hmc816lp4e v00.1108 smt gaas phemt dual channel low noise amplifier, 230 - 660 mhz evaluation pcb i tem description j1 - j4 p cb m ount sm a rf connector j5, j6 2mm vertical m olex 8pos connector c1, c2 100 p f capacitor, 0402 p kg. c5, c6 1000 p f capacitor, 0603 p kg. c9, c10 0.47 f capacitor, 0402 p kg. c11, c12 10k p f capacitor, 0402 p kg. r 3, r 4 0 o hm r esistor, 0402 p kg. r 5, r 6 ( r bias1,2) 10k o hm r esistor, 0402 p kg. l 1, l 2 51 nh i nductor, 0402 p kg. l 3, l 4 47 nh i nductor, 0603 p kg. u1 h m c816 lp 4 e amplifer p cb [2] 122725 e valuation p cb [1] r eference this number when ordering complete evaluation p cb [2] circuit board m aterial: r ogers 4350 or arlon 25 fr list of materials for evaluation pcb 123191 [1] the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request.
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