MJD41C d-pak(to-252) npn plastic encapsulate tra n sistors 1.base 2.collector 3.emitter 1 2 3 weitron http://www .weitron.com.tw 1/ 5 19-nov-09 l e a d( p b) features: - f r ee p b absolute maximum ratings (t a =25?c) collector-base voltage collector-emitter voltage emitter-base voltage symbol value unit rating t j p d 100 100 5.0 6.0 1.25 collector power dissipation i c ?c ?c w storage temperature range t stg +150 -65 to +150 collector current v cbo v ceo v ebo a v v v junction temperature * designed for general purpose ampli er and low speed switching applications. * monolithic construction with built?in base?emitter resistors.
on characteristics dc current gain v ce =4v, i c =0.3a v ce =4v, i c =6a v ce =10v, i c =0.5a, f=1mhz v ce =4v, i c =3a collector-emitter saturation voltage i c =6a, i b =0.6a h fe(1) 30 - - - h fe(2) 15 - 75 v ce(sat) - - 1.5 v transition frequency 3 - - mhz weitron http://www .weitron.com.tw 2/ 5 19-nov-09 f t base-emitter voltage v be - - 2 v symbol parameter min typ max unit electrical characteristics(t a =25?c unless otherwise noted) collector-emitter breakdown voltage i c =30ma collector-base breakdown voltage i c =0.1ma emitter-base breakdown voltage i e =0.1ma bv ebo bv ceo bv cbo 100 100 5.0 - - - - - - v v v v cb =60v i ceo - 50 - a v eb =5.0v i ebo - 0.5 - ma MJD41C
mjd 41c weitron http://www .weitron.com.tw 3/5 19-nov-09
mjd 41c weitron http://ww w .weitron.com.tw 4/5 19-nov-09 t ypical characteristics
to-252 outline dimensions MJD41C weitron http://ww w .weitron.com.tw 5/5 19-nov-09 u n i t : m m dim min max 6.40 6.80 9.00 10.00 0.50 0.80 - 2.30 2.20 2.50 0.45 0.55 1.00 1.60 5.40 5.80 0.30 0.64 0.70 1.70 0.90 1.50 to-252 e g a h j b m d k c l 1 2 3 4 a b c d e g h j k l m
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