reverse v oltage: 200 to 1000 v olts forward current: 0.8,1.0 a rohs device page 1 rev :a features -glass passivated chip junction. -plastic materrial has u/l flammability classification 94v-0. -save space on printed circuit boards. -pb free product. mechanical data -polarity: symbol molded on body . -case: molded plastic body over passivated junction. tb2s-g thru. tb10s-g pa ram ete r d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) t b s qw -bbr53 s y m b o l unit tb4s-g tb6s-g TB8S-g tb10s-g ma xim um re cur ren t p eak re ver se v olta ge ma xim um rm s v olta ge ma xim um dc bl ock ing v olta ge ma xim um a ver age fo rwa rd ou tpu t c urr ent tl =1 00 c pe ak fo rwa rd su rge cu rre nt, 8. 3m s s ing le ha lf s ine -wa ve, su per imp ose d o n r ate d l oad (je de c m eth od) ma xim um re ver se cu rre nt @ t a =2 5c at ra ted dc bl ock ing v olta ge op era ting ju nct ion t em per atu re ra nge sto rag e t em per atu re ra nge no tes : 1. on gla ss epo xy p .c. b 2 . o n a lum inu m sub str ate v rrm v rm s v dc i (a v) f i fsm v f i r r jl t j t stg 400 280 400 600 420 600 800 560 800 100 0 700 100 0 v v v 30 0.9 5 10 -55 to +1 50 -55 to +1 50 a a v a c /w c c 0.028 (0.70) 0.024 (0.60) 0.012 (0.30) 0.008 (0.20) 0.264 (6.70) comchip t echnology co., l td. tb2s-g 200 140 200 m a r k i n g tb4s tb6s TB8S tb10s tb2s 0.060 (1.45) 0.051 (1.15) 0.205 (5.20) 0.1 89 (4 .80 ) 0.249 (6.30) 0.179 (4.55) 0.167 (4.25) 0.028 (0.70) 0.024 (0.60) 0.161 (4.10) 0.154 (3.90) + - 0.006 (0.15) 0.002 (0.05) -high temperature soldering guaranteed: -high surge overload rating :30a peak 260c/10 seconds at 5 ibs. -t erminals: plated leads solderable per mil-std-750, -mounting position: any . method 2026. 1.0 2) 0.8 1) r ja 25 62. 5 80 t ypi cal th erm al j unc tion to lea d on alu min um su bst rat e on gla ss- epo xy sub str ate ma xim um in sta nta neo us fo rwa rd v olta ge at 0. 4a dc maximum ratings and electrical characteristics rating at 25c ambient temperature unless otherwise specified. single phase, half wave ,60hz, resistive or inductive load. for capacitive load, derate current by 20% silicon bridge rectifiers
ra ting and characteristic cur ves (tb2s-g thru tb10s-g) ambient temperature, (c) 150 125 100 75 50 25 fig.2 forward derating curve - 0 0.25 0.5 0.75 1.0 a v e r a g e f o r w a r d r e c t i f i e d c u r r e n t , ( a ) resistive or inductive load number of cycles at 60hz 1 fig.4 peak forward surge current - 0 p e a k f o r w a r d s u r g e c u r r e n t , ( a ) 10 20 30 40 10 100 pulse width 8.3ms, single half-sine wave (jedec method) percent of rated peak reverse v oltage, (%) 0 fig.3 t ypical reverse characteristics - 1.0 10 100 1000 10000 20 40 60 80 100 120 140 o t a =25 c o t a =100 c instantaneous forward v oltage, (v) 0.7 fig.1 - t ypical forward characteristics 0.01 i n s t a n t a n e o u s f o r w a r d c u r r e n t , ( a ) 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.1 1.0 comchip t echnology co., l td. qw -bbr53 page 2 rev :a 0.4 aluminum substrate glass p .c.b epoxy 10000 silicon bridge rectifiers i n s t a n t a n e o u s r e v e r s e c u r r e n t , ( a ) 0
page 3 comchip t echnology co., l td. qw -bbr53 8 . 0 0 0 . 1 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 0 5 1 2 . 0 0 0 . 3 0 1 8 . 0 0 0 . 1 s y m b o l ( m m ) ( i n c h ) 0 . 4 7 2 0 . 0 1 2 0 . 3 1 5 0 . 0 0 4 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 2 0 . 7 0 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 5 . 5 0 0 . 1 0 0 . 2 1 7 0 . 0 0 4 t b s 0 . 3 0 0 . 0 5 0 . 0 1 2 0 . 0 0 2 t o 1 2 0 d 1 d 2 d w 1 t railer device leader 10 pitches (min) 10 pitches (min) ....... ....... ....... ....... ....... ....... ....... ....... end start direction of feed reel t aping specification t c i n d e x h o l e d e f b w p p 0 p 1 a silicon bridge rectifiers b c d d d 2 d 1 t b s s y m b o l ( m m ) ( i n c h ) 2 . 9 5 3 0 . 0 0 4 1 . 5 5 0 . 0 5 7 5 0 . 1 1 3 . 0 0 . 1 0 3 3 0 0 . 1 0 . 0 6 1 0 . 0 0 2 1 2 . 9 9 2 0 . 0 0 4 0 . 5 1 2 0 . 0 0 4 5 . 5 0 0 . 1 0 0 . 2 1 7 0 . 0 0 4 6 . 8 5 0 . 1 0 0 . 2 7 0 0 . 0 0 4 2 . 1 0 0 . 1 0 0 . 0 8 3 0 . 0 0 4 a rev :a
comchip t echnology co., l td. page 4 rev :a standard packaging qw -bbr53 a d 0.027min 0.68min 4.00.1 0.62min 0.1570.004 0.024min 6.70max 0.264max b c suggested p ad layout size (inch) (mm) tbs a b c d c a s e t y p e t b s 1 , 5 0 0 r e e l ( p c s ) reel size (inch) 1 3 r e e l p a c k silicon bridge rectifiers
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