semiconductor rohs rohs nket800 series major ratings and characteristics symbol characteristics i t av ( ) 85 c i t rms ( ) a i tsm 50 hz 60 hz i t 2 50 hz ka 2 s 60 hz i 2 t range t j range 85 c units values a ka s 2 c v 800 1256 16000 16800 1280 1166 12800 400 to1600 40to125 n high power products ell page1of4 phase control thyristor, 800a ( ) super magn- a pak power modules features ? high voltage ? ( electrically isolated by dbc ceramic ai 2 3 o ) ? 3500 v rms isolating voltage ? industrial standard package ? high surge capability ? glass passivated chips ? modules uses high voltage power thyristor in basic configurations ? simple mounting ? ul approved file e320098 ? compliant to rohs ? designed and qualified for multiple level applications ? dc motor control and drives ? battery charges ? welders ? power converters ? lighting control ? heat and temperature control product summary i t av ( ) 800 a super magn-a-pak k g 1 3 v drm rrm /v 76 132 8.5 150 180 78 58 4 120 15 2 12 m
page2of4 semiconductor rohs rohs forward conduction parameter symbol test conditions maximum average onstate current at case temperature i t av ( ) 180 , conduction half sine wave ,50hz maximum rms on state current i t rms ( ) a maximum peak one cycle, , on state non repetitive surge current i tsm t ms = 10 no voltage reapplied sine half wave, initial t j = t j maximum t ms = 8.3 maximum i 2 t for fusing i 2 t ka 2 s maximum i 2 t for fusing i 2 t t ms to ms no = 0.1 10 , voltage reapplied maximum on state voltage drop v tm i tm = 1500a, t j = 25 , 180 c conduction maximum holding current i h anode supply v initial i = 12 t = 30 ,a t j =25 c ma maximum latching current i l anode supply v resistive load = 12 = 1 gate pulse v s t : 10 , 100 , j = 25 c 400 blocking parameter symbol test conditions values maximum peak reverse and off state leakage current i rrm , i drm t j = 125 c rms isolation voltage v iso 50 , , hz circuit to base all terminals shorted v critical rate of rise of off state voltage dv dt / t j = t j , maximum exponential to rated v 67 % drm / v s v units electrical specifications voltage ratings type number voltage code v rrm / v drm , maximum repetitive peak reverse voltage v v rsm / v dsm , maximum non repetitive peak reverse voltage v i rrm / i drm at c 125 ma nket800 04 400 500 40 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 180 , conduction half sine wave ,50hz ,t = 85 c j values 800 85 1256 16000 16800 1280 1166 12800 2.0 40~200 a c 40 2500(1min) 500 ma n high power products ell t ms = 10 t ms = 8.3 t ms = 10 t ms = 8.3 ka 2 s 896 815 reapplied 100%v rrm 3500(1s) units nket800 series
moduletype semiconductor rohs rohs triggering parameter symbol test conditions values units maximum peak gate power p gm t p 5 , ms t j = t j 10 maximum w maximum average gate power p g av ( ) f hz t = 50 , j = t j 3 maximum maximum peak gate current i gm t p 5 , ms t j = t j maximum 3 a maximum peak negative gate voltage v gt 10 v gate voltage v gt anode supply v = 12 , resistive load r ; a = 1 t j = 25 c i gt ma maximum gate voltage that will not trigger v gd t j = t j , maximum 66.7% v drm applied 0.25 maximum gate current that will not trigger i gd 10 ma maximum rate of rise of turned on current di dt / t j = 25 oc ,i = 1.5a ,t 0.5 s gm r 150 / a s thermal and mechanical specifications parameter symbol test conditions values units maximum junction operating temperature range t j 40 125 to c maximum storage temperature range t stg 40 125 to maximum thermal resistance, junction to ca se per junction r thjc dc operation c/w maximum thermal resistance, case to heatsink per module r thcs mounting surface smooth , , flat and greased mounting torque 10 % iap to heatsink ,m8 a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. lubricated threads. 6 14 to n.m busbar to iap ,m8 approximate weight 3500 123.4 case style super magnapark triggering j j j = t j j j v gt maximum required dc to trigger a maximum required dc gate current to trigger = t thcs ordering information table 1 2 3 : currentratingi t av ( ) 100= voltagecodex v rrm device code ? 0.7~2.0 30~200 v oz. g 0.009 n high power products ell page3of4 0.054 nket800 series 800
semiconductor rohs rohs n high power products ell page4of4 nket800 series onstatecurrentvsvoltagecharacteristic transientthermalimpedance(junctioncase) powerconsumptionvs.averagecurrent casetemperaturevs.onstateaveragecurrent onstatesurgecurrentvscycles i tcharacteristic 2 onstatepeakvoltage(v) transientthermalimpedance( c/w) maximumpowerconsumption(w) asetemperature( c) onstatesurgecurrent(ka) ( ) i t 10 2 3a2s cycles@50hz timet(ms) onstatecurrent(a) time(s) onstateaveragecurrent(a) onstateaveragecurrent(a) 90 30 180 30 90 60 120 180 180 120 90 60 30
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