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| kli-8002-001 1 SI5311-H / SI5311-H(b) ired features ? colorless transparency lens type ? 5mm(t-1 3/4 ) all plastic mold type ? low power consumption ? high radiant intensity applications ? infrared remote control and free air transmi ssion systems with low forward voltage and comfortable radiation angle requirements in combination with pin photodiodes or phototransistors. outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r straight type stopper type 8.6 0.2 5.8 0.2 1 . 0 m i n 1 . 0 m i n 5.8 0.2 0 . 5 1 2 2.54nom 0 . 5 1 2 2.54nom 8.6 0.2 0.5 23.0 min 0.8 0.2 0.5 0.8 0.2 5.0 0.2 5.0 0.2 pin connections 1.anode 2.cathode
kli-8002-001 2 SI5311-H / SI5311-H ( b ) absolute maximum ratings characteristic symbol ratings unit power dissipation p d 150 mw forward current i f 100 ma * 1 peak forward current i fp 1 a reverse voltage v r 4 v operating temperature t opr -25 85 storage temperature t stg -30 100 * 2 soldering temperature t sol 260 for 5 seconds *1.duty ratio = 1/16, pulse width = 0.1ms *2.keep the distance more than 2.0mm from pcb to the bottom of ired package electrical characteristics characteristic symbol test co ndition min. typ. max. unit forward voltage v f i f = 50ma - 1.3 1.7 v radiant intensity i e i f = 50ma 25 50 - mw/sr peak wavelength p i f = 50ma - 950 - nm spectrum bandwidth i f = 50ma - 50 - nm reverse current i r v r =4v - - 10 ua * 3 half angle 1 / 2 i f = 50ma - 11 - deg *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity kli-8002-001 3 SI5311-H / SI5311-H ( b ) characteristic diagrams fig.4 spectrum distribution fig. 3 i f ? ta fig. 2 i e - i f fig. 1 i f - v f forward current i f [ma] ambient temperature ta [ ] relative intensity [%] wavelength [nm] forward voltage v f [v] forward current i f [ma] forward current i f [ma] fig. 5 radiation diagram 100 50 0 50 100 radiant intensity i e [mw/sr] relative radiant intensity i e [%] |
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