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| semitrans ? 2 trench igbt modules skm 195gb126d skm 195gal126d features ! " # $ typical applications* % & ' ( ) & gb gal absolute maximum ratings * + , ! & symbol conditions values units igbt ) - * + , / * 0 0 $ - / + 0 , * + , * * 0 % 1 0 , / " 0 % $ 2 3 $ 2 3 * # $ 4 0 0 % 5 ) 6 * 0 " 0 0 7 5 8 * 0 7 ) 9 / * 0 0 - / * + , / 0 : inverse diode $ ; - / + 0 , * + , / < 0 % 1 0 , / / + % $ ; 2 3 $ ; 2 3 * # $ ; * 0 0 % $ ; ) 3 / 0 7 = - / + 0 , > 0 0 % freewheeling diode $ ; - / + 0 , * + , / < 0 % 1 0 , / / + % $ ; 2 3 $ ; 2 3 * # $ ; * 0 0 % $ ; ) 3 / 0 7 = - / + 0 , > 0 0 % module $ 2 3 ) * 0 0 % - ? @ 0 = = = a / + 0 , ? @ 0 = = = a / * + , % ! / = @ 0 0 0 characteristics * + , ! & symbol conditions min. typ. max. units igbt 5 5 ! $ " % + + ! 1 " ! + $ ) 5 0 ! ) - * + , 0 ! / 0 ! 4 % 0 - * + , / / ! * - / * + , 0 ! > / ! / 5 0 - * + , @ ! < " ! 4 b - / * + , < ! 4 > b $ / + 0 % ! 5 / + - * + , = / ! < * ! / + - / * + , = * * ! @ + / 0 ! + ; * + ! 5 0 / 3 c 0 ! > ; 0 ! 1 ; d 5 5 ? 1 = = = a * 0 / 4 1 0 2 5 - , + e & * 1 0 2 5 * b " 0 0 + 0 $ / + 0 % / " f & 2 5 * b - / * + , + " 0 5 6 / + < 0 * @ ! + f 2 - ? $ 5 g 0 ! / " h i j skm 195gb126d ... 1 01-09-2008 maj ? by semikron semitrans ? 2 trench igbt modules skm 195gb126d skm 195gal126d features ! " # $ typical applications* % & ' ( ) & gb gal characteristics symbol conditions min. typ. max. units inverse diode ; $ ; / 0 0 % 7 5 0 - * + , = * * ! + - / * + , = / ! 1 ; 0 - * + , / ! / / ! * - / * + , ; - * + , > / 4 b - / * + , b $ 2 2 3 $ ; / + 0 % - / * + , 1 " % d & i & * * 0 0 % i : / < : 5 ? / + 7 " 0 0 + ! 1 f 2 - ? k & & 0 ! 4 * h i j freewheeling diode ; $ ; / 0 0 % 7 5 0 - * + , = * * ! + - / * + , = / ! 1 ; 0 - * + , / ! / / ! * - / * + , ; - * + , > / 4 - / * + , $ 2 2 3 $ ; / + 0 % - / * + , 1 " % d & i & * * 0 0 % i : / < : 5 ? / + 7 " 0 0 + ! 1 f 2 - ? ; k & & 0 ! 4 * h i j module l 4 0 2 m a m = ! ? * + , 0 ! < + b / * + , / b 2 ? & 0 ! 0 + h i j 3 n 3 " 4 + o 3 3 + * ! + + o / " 0 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. * the specifications of our components may not be considered as an assurance of component characteristics. components have to be tested for the respective application. adjustments may be necessary. the use of semikron products in life support appliances and systems is subject to prior specification and written approval by semikron. we therefore strongly recommend prior consultation of our personal. skm 195gb126d ... 2 01-09-2008 maj ? by semikron semitrans ? 2 trench igbt modules skm 195gb126d skm 195gal126d features ! " # $ typical applications* % & ' ( ) & gb gal z th symbol conditions values units z th(j-c)l 2 / / / + n i j 2 * 4 @ n i j 2 4 > n i j 2 @ * n i j / 0 ! 0 @ > 4 * 0 ! 0 / < @ 4 0 ! 0 0 / * @ 0 ! 0 0 0 * z th(j-c)d 2 / * 0 0 n i j 2 * > 0 n i j 2 4 * " n i j 2 @ @ n i j / 0 ! 0 + @ * 0 ! 0 0 1 > 4 0 ! 0 0 / @ 0 ! 0 1 skm 195gb126d ... 3 01-09-2008 maj ? by semikron fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic skm 195gb126d ... 4 01-09-2008 maj ? by semikron fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt z thp(j-c) = f (t p ); d = t p /t c = t p *f fig. 10 transient thermal impedance of fwd z thp(j-c) = f (t p ); d = t p /t c = t p *f fig. 11 cal diode forward characteristic fig. 12 typ. cal diode peak reverse recovery current skm 195gb126d ... 5 01-09-2008 maj ? by semikron ul regognized file no. e 63 532 k " / 5 g k " / 5 % l k " * skm 195gb126d ... 6 01-09-2008 maj ? by semikron |
Price & Availability of SKM195GB126D08
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