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specification (pr e liminary) item new white side view led m o d e l s z a f 0 b cust o m e r customer appr ov ed by appr ov ed by appr ov ed by / / / supplier dr awn by check e d by appr ov ed by / / / seoul se miconductor co. , ltd.
rev. 1.00 szaf0 b contents 1. f e atures 2. application 3. absolute maximum r a tings 4. electr o -optical char acteristics 5. cie chromaticit y diagr a m 6. char acteristic diagr a m 7. r e liabilit y 8. pr ecautions 9. soldering p r of ile 10. outli n e di mension 11. p a cking 12. r eel p a cking structure 13. history 02 02 03 03 04 05 08 09 10 11 12 13 14 seoul semiconduc tor co., ltd. 1 ssc-qp - 7 - 03 -44( ?
rev. 1.00 szaf0 b mm ) low th ermal r e sist ance r o hs compliant, l e ad fr ee suitable f o r s m all applications own p a ten t r e ser v ed SZAF0B i s v e ry usef ul side view l e d in back light unit application
rev. 1.00 szaf0 b 3. absolute maximu m ratings ( t a = 25 c ) p a r a m e t e r s y m b o l v a l u e u n i t p o wer di ssipa tion p d *1 120 mw f o rw ar d curr ent i f 30 ma p e ak f o r w ar d curr ent i fm *2 100 ma r e v e rse v o ltage v r 5 v oper ating t e mper atur e t opr -30 ~ +85 c stor ag e t e mp er atur e t stg -40 ~ +100 c junction t e m p er atur e t j 125 c * 1 care is to b e tak e n t h at p o w e r dis s ip at io n d o e s no t exceed the a b sol u te maxim u m rating of t h e p r od uc t. *2 i fm cond it io ns : pu lse w i d t h t w 0.1ms , dut y r a t i o 1/10 4. electro-optical characterist ics ( t a = 25 c ) i t e m s y m b o l c o n d i t i o n m i n t y p m a x u n i t r a nk y 2. 7 - 3.0 r a nk z 3.0 - 3.3 fo r w a r d v o l t a g e ra n k a v f i f = 20 ma 3 . 3 - 3. 7 v r e v e rse curr ent i r v r = 5 v - - 5 0 a r a nk i8 800 - 900 r a nk i9 900 - 1000 r a n k j 0 1 0 0 0 - 1 1 0 0 luminous i n tensit y *1 ra n k j 1 i v i f = 20 ma 1 1 0 0 - 1 2 0 0 mcd viewing angle *2 2 1/2 i f = 20 ma 120 x 0 . 2 6 4 - 0 . 2 9 5 y 0 . 2 4 8 - 0 . 2 9 5 color coor dinates *3 r a n k b y i f = 20 ma 0 . 2 7 6 - 0 . 3 1 5 - *1 the l u mi nous i n tens i t y i v is m e asured at the p e ak of the spatial patter n which m a y no t be aligned with t h e mechanic al ax is o f th e led pack age . lumi no us in ten s i t y mea s uremen t all o wanc e is 10 % . *2 1/ 2 is the o f f - axi s w h ere the lum i nou s in te ns i t y is 1 / 2 of t h e p e ak in ten s i t y . * 3 measurem e n t u n cer t ai nt y o f the co lor co ord i nate s 0.01 not e : a l l produc ts conf i r m to t h e l i sted mi nimum and maxi m u m sp ec if ica t i o n s f o r e l ec tri c an d op tica l char ac t e ris t i c s, when o pe r a t e d a t 20ma wi t h in the maxi mum r a t i ngs shown abov e. all mea s uremen ts wer e made und er the standa r d ized en vironmen t of se ou l semico n d uctor . seoul semiconduc tor co., ltd. 3 ssc-qp - 7 - 03 -44( e )
rev. 1.00 szaf0 b 5. cie chromaticity diagram 0. 0 0 . 1 0. 2 0 . 3 0 . 4 0 . 5 0. 6 0 . 7 0. 8 0. 0 0. 1 0. 2 0. 3 0. 4 0. 5 0. 6 0. 7 0. 8 0. 9 460 470 475 480 485 490 495 500 505 510 515 520 525 530 535 540 545 550 555 560 565 570 575 58 0 585 590 595 600 610 620 630 830 y co ord . x c o o r d . 0. 24 0. 26 0 . 2 8 0 . 3 0 0. 3 2 0. 34 0. 36 0. 22 0. 24 0. 26 0. 28 0. 30 0. 32 0. 34 0. 36 e f b y coord . x c o o r d . lumino us intensity ranking b y color coordinates ranking by lumino us intensity r a n k m i n m a x u n i t b e f i 8 8 0 0 9 0 0 i 9 9 0 0 1 0 0 0 j 0 1 0 0 0 1 1 0 0 j 1 1 1 0 0 1 2 0 0 mcd * the check e d r a nks ar e a v a i lable c o l o r r a n k ( i f = 20 ma, t a = 25 c) b e f x y x y x y 0 . 2 6 4 0 . 2 6 7 0 . 2 9 6 0 . 2 7 6 0 . 3 1 1 0 . 2 9 4 0 . 2 8 0 0 . 2 4 8 0 . 3 1 1 0 . 2 9 4 0 . 3 3 0 0 . 3 1 8 0 . 2 9 6 0 . 2 7 6 0 . 3 0 7 0 . 3 1 5 0 . 3 3 0 0 . 3 3 9 0 . 2 8 7 0 . 2 9 5 0 . 2 8 7 0 . 2 9 5 0 . 3 0 7 0 . 3 1 5 seoul semiconduc tor co., ltd. 4 ssc-qp - 7 - 03 -44( e )
rev. 1.00 szaf0 b 6. characteristic diagram forw ard current vs. forw ard voltage intensity vs. forward c u rrent 2. 5 2 . 6 2. 7 2 . 8 2. 9 3 . 0 3. 1 3 . 2 3. 3 3 . 4 1 10 t a = 25 o c forw ard cu rrent [ ma ] for w ar d vol t age [ v ] 0 5 10 15 2 0 25 30 35 0 20 0 40 0 60 0 80 0 100 0 120 0 140 0 160 0 t a = 25 o c intensit y [ mcd ] forw a r d cu rren t [ ma ] forw ard current vs. amb i ent temperature radiation diagram - 3 0 - 1 5 0 1 53 0 4 56 0 7 5 9 0 0 5 10 15 20 25 30 forwa r d cu rren t [ ma ] amb i ent temperature [ o c ] - 1 0 0 -8 0 - 6 0 -4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 0. 0 0. 5 1. 0 x coor d . y coor d . in ten s i t y th e t a seoul semiconduc tor co., ltd. 5 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 szaf0 b color coordi nat e v s . f o r w a r d c u r r e n t spectrum 0. 274 0. 276 0.278 0.280 0. 263 0. 264 0. 265 0. 266 t a = 25 o c 1 ma 30 ma y coord. x coord. 400 50 0 600 700 800 t a = 25 o c i f = 20 ma in t e nsity [ % ] wa ve length [ nm ] forward voltage vs. am bient temp erature color coordinate vs. a m bient tem p erature - 4 5 - 30 -15 0 15 30 45 60 75 90 0. 9 4 0. 9 6 0. 9 8 1. 0 0 1. 0 2 1. 0 4 1. 0 6 i f = 20 ma v f / v f [25 o c ] am b i en t tem p eratu r e [ o c ] 0. 282 0 . 284 0. 286 0. 288 0. 290 0. 270 0. 272 0. 274 0. 276 0. 278 0. 280 i f = 20 ma y coord . x coor d. 25 o c 85 o c -3 0 o c seoul semiconduc tor co., ltd. 6 ssc-qp - 7 - 03 -44( ? )
rev. 1.00 szaf0 b relati ve luminosity vs. am b i ent t e mper atur e allowab l e for w ar d c u rr ent vs. dut y ratio - 3 0 - 1 5 0 1 5 3 04 56 0 7 59 0 0. 7 0. 8 0. 9 1. 0 1. 1 1. 2 i v / i v [25 o c ] am bi e n t t e mp er a t u r e [ o c ] 1 1 0 100 20 40 60 80 100 120 t a = 25 o c a llo w a ble f o rw ar d c u r r ent [ ma ] duty rati o [ % ] seoul semiconduc tor co., ltd. 7 ssc-qp - 7 -03 -44( ? )
rev. 1.00 szaf0 b 7. reliability (1) test it ems and resul t s test item test conditions note num b er of damaged reference lif e t e st 1 t a = 25 c ; i f = 20 ma 1000 hrs . 0/20 eiaj ed -4701 100 101 lif e t e st 2 t a = 25 c ; i f = 30 ma 500 hr 0/20 eiaj ed -4701 100 101 therm a l shoc k -30 c ~ 85 c (30 mi n ) (30 mi n ) 20 cycle 0/50 eiaj ed -4701 300 307 high t e mper atur e lif e t e st t a = 85 c ; i f = 5 ma 1000 hrs . 0 / 2 0 - low t e mper atur e lif e t e st t a = - 30 c ; i f = 20 ma 1000 hrs . 0 / 2 0 - high t e mper atur e stor age t a = 100 c 1000 hrs . 0/50 eiaj ed -4701 200 201 low t e mper atur e stor age t a = - 40 c 1000 hrs . 0/50 eiaj ed -4701 200 202 high humidit y hea t lif e t e st *1 t a = 60 c ; rh = 90 % , i f = 20 ma 500 hrs . 0/20 eiaj ed -4701 100 102 humidit y hea t load t a = 60 c ; rh = 90 % 1000 hrs . 0/50 eiaj ed -4701 100 103 r e sist ance to soldering he at t sld = 260 c , 10 sec pr e tr eatment ; 30 c , 70 % , 168 hr 2 ti m e s 0/50 eiaj ed -4701 301 302 solder abilit y (r eflo w solderi n g) t sld = 215 5 c , 3 sec (lead solder) 1 ti m e ove r 95 % 0/50 eiaj ed -4701 303 t e mper atur e cy cle - 40 c ~ 25 c ~ 100 c ~ 2 5 c (30 mi n ) (5 mi n ) (30 mi n ) (5 mi n ) 100 cycle 0/50 eiaj ed -4701 100 105 moi stur e r e si st ance cy cle 25 c ~ 65 c ~ - 10 c rh = 90 % , 24 hr / 1 cycle 10 cycle 0/50 eiaj ed -4701 200 203 (2) criteria for j u dg ing the da mage criter ia for judgment i t e m s y m b o l t e s t c o n d i t i o n m i n . m a x . fo r w a r d v o l t a g e v f i f = 20 ma - u . s . l 1.2 r e v e rse curr ent i r v r = 5 v - u . s . l 2.0 luminous i n tensit y i v i f = 20 ma l.s . l 0.5 - u . s . l. : upper st andar d lev e l , l.s . l. : low e r st andar d lev e l , seoul semiconduc t or co., ltd. 8 ssc-qp - 7 - 03 -44( e )
rev. 1.00 szaf0 b c to 30 c and at a hu midit y of less than 60 % rh . i n case of being stor ed f o r mor e than 3 month s , th e pr oduct sh ould be sealed with nitr ogen gas. (2) after op enin g th e p a cka g e when solderi n g, this c o uld r e sult in a decr ease of th e photoelectric ef f e ct or light intensit y . a. soldering should be done right after m o unting the pr oduct. b. k eep the tem p er atur e in th e r a nge f r om 5 c to 40 c and the humidi t y at less th an 30 % . soldering should be done within 7 days after op ening the desi ccant package. if the pr oduct has been exposed f o r mor e than 7 day s af ter openi n g the package or th e indi cating c o lor of the desi ccator changes, the pr oduct mu st be bak e d at a temper atur e between 60 c and 65 c f o r 10 to 12 hours. an unused and unsealed pr oduct sh ould be r e pack ed in a desicc ant pack age and k e pt sealed in a dr y atmo spher e . ( 3 ) pr e c au t i on s f o r u s e an y external mechanic al f o r c e or exc e ssi v e vibr a tion should not be applied to the pr oduct duri ng cooling after soldering, and it is pr ef er able to av oid r a pid cool ing. the pr oduct should not be mounted on a distorted part of pcb . g l o v e s o r w r i s t b a n d s f o r e s d ( e l e c t r i c s t a t i c d i s c h a r g e ) s h o u l d b e w o r e i n o r d e r t o p r e v e n t e s d a n d sur g e damag e , and all dev i ces and equi pmen ts mu st be gr ounded to the earth . (4) miscellaneous r a diation r e si stance is n o t consider ed. when cleanin g the pr oduc t, an y kind of fluid such as w a ter , oil and or ganic solv ent must not be used and ip a(i s opr o pyl alcohol) must be used . when u s ing the pr oduct, oper ating curr ent sh ould be settled in c o nsider ation of the maxim u m ambient temper atur e. its appe ar anc e or spe c if ication f o r impr o v ement i s sub j ect t o chang e without n o ti ce. seoul semiconduc t or co., ltd. 9 ssc-qp - 7 - 03 -44( e )
- 7 - 03 -44( e ) rev. 1.00 szaf0 b 9. soldering profile the led c a n be solder ed i n place using the r e flow sol d ering method. (1) lead solder pr eliminary heating to be at maximum 210 c f o r maximum 2 minutes. soldering heat to be at maximum 240 c f o r maximu m 10 second s. 0 1 5 3 0 4 5 6 0 7 5 9 0 105 12 0 1 35 1 5 0 165 18 0 1 9 5 0 40 80 120 160 200 240 280 solder i n g t i m e s [ s ec ] dev i c e surfac e tem p er at ure [ o c] (2) lead-f ree solder pr eliminary heating to be at maximum 220 c f o r maximum 2 minutes. soldering heat to be at maximum 260 c f o r maximu m 10 second s. 0 1 5 3 0 4 5 6 0 7 5 9 0 1 05 120 135 1 50 16 5 1 80 195 0 40 80 12 0 16 0 20 0 24 0 28 0 d e v i c e s u r f ac e t e m p er atu r e [ o c] s o lde r ing ti me s [sec] (3) hand soldering conditi o ns not mor e th an 5 second s @max 300 c , under soldering ir on. seoul semiconduc t or co., ltd. 10 ssc-qp
rev. 1.00 szaf0 b 1 0 . o u t l i n e d i m e n s i o n ( t o ler a nce : 0.2 , unit : mm ) seoul semiconduc t or co., ltd. 11 ssc-qp - 7 - 03 -44( ? re com m e nded solder pattern cathode anode mol d ga t e
rev. 1.00 szaf0 b 1 1 . p a c k i n g ( t o ler a nce : mm ) an od e ca th od e s e c t i o n b-b' labe l 180 13 0 .3 60 22 2 0 .2 +1 -0 15.4 13 +0 -3 -0 +0. 2 1 . 0 mm (3) adhesion s t r e ngth of cov e r t a pe: adhesi on str e ngth to be 0.1 - 0. 7 n when the cov e r tape i s turned of f f r o m the carrier tape at 10 q angle to be th e carrier tape (4) p a ckage: p/n , manuf acturi ng data code no. and quantit y to be indicated on a damp pr oof p a ckage seoul semiconduc t or co., ltd. 12 ssc-qp - 7 - 03 -44( ?
rev. 1.00 szaf0 b 12. reel packing structure l o t n u m b e r : x xxxxx xx s s c p a r t n u m b e r : xxxx xxxx m a teria l : pa pe r(sw 3b (b )) seou l se m i c o n d u c t o r e c oli g h t 245 ( mm) ac r i c h e ro hs tuv 22 0 ( m m ) ma d e i n k o r e a ty p e 7i n c h 14 2 ( m m ) si z e ( m m ) 245 22 0 245 22 0 a b 14 2 80 c reel barc od e lab e l quantity : xxxx rank : outer box st ru c t u r e xxx hu mi d i ty i n di cat o r d e s i c can t al uminum vinyl bag sz af0b x lot number the lot number is comp osed of the f o llowing char acters; SZAF0B ye a r 8 f o r 2008, 9 f o r 2009 EE month 01 f o r jan. , 0 2 f o r f e b . , EE 12 f o r dec. day 01, 02, 03, 0 4 , 05, EE 2 7 , 28, 29, 30 , 31 number 001, 002, 00 3, 004 , 005, 006, 007 EE seoul semiconduc t or co., ltd. 13 ssc-qp - 7 - 03 -44( e )
rev. 1.00 szaf0 b 13. histor y rev. no. contents date 1.00 - the in stituti o n of new sp ec. 2008.06.03 published by seoul semiconductor co., ltd. http://www.seoulsem i con.com 148-29, ga san-dong, geumcheon-gu, seoul, 153-801. south korea ? all right reserved. seoul semiconduc t or co., ltd. 14 ssc-qp - 7 - 03 -44( ?

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