document number: 86051 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 161 standard avalanche sinterglass diode BYW82, byw83, byw84, byw85, byw86 vishay semiconductors mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? glass passivated junction ? hermetically sealed package ? controlled avalanche characteristics ? low reverse current ? high surge current loading ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? rectification, general purpose 949588 parts table part type differe ntiation package BYW82 v r = 200 v; i fav = 3 a sod-64 byw83 v r = 400 v; i fav = 3 a sod-64 byw84 v r = 600 v; i fav = 3 a sod-64 byw85 v r = 800 v; i fav = 3 a sod-64 byw86 v r = 1000 v; i fav = 3 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics BYW82 v r = v rrm 200 v byw83 v r = v rrm 400 v byw84 v r = v rrm 600 v byw85 v r = v rrm 800 v byw86 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 100 a repetitive peak forward current i frm 18 a average forward current i fav 3a pulse avalanche peak power t p = 20 s, half sine wave, t j = 175 c p r 1000 w pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, t j = 175 c e r 20 mj i 2 t-rating i 2 t40a 2 s junction and storage temperature range t j = t stg - 55 to + 175 c maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86051 162 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 BYW82, byw83, byw84, byw85, byw86 vishay semiconductors standard avalanche sinterglass diode typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - max. average forward current vs. ambient temperature fig. 3 - forward current vs. forward voltage fig. 4 - max. reverse power dissipation vs. junction temperature electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max unit forward voltage i f = 3 a v f --1v reverse current v r = v rrm i r -0.11a v r = v rrm , t j = 100 c i r - 5 10 a breakdown voltage i r = 100 a, t p /t = 0.01, t p = 0.3 ms v (br) - - 1600 v diode capacitance v r = 4 v, f = 1 mhz c d -4060pf reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr -3.55s i f = 1 a, di/dt = 5 a/s, v r = 50 v t rr -4.57.5s reverse recovery charge l f = 1 a, di/dt = 5 a/s q rr - 8 12 c 0 5 10 15 25 0 10 20 30 40 r thja - therm. re s i s t. junction/ambient (k/w) i - lead length (mm) 30 94 9563 20 ll t l = con s tant 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 16361 i fav - average forward current (a) r thja = 70 k/w pcb: d = 25 mm v r = v rrm half sinewave r thja = 25 k/w i = 10 mm i f - forward current (a) 0.001 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 2.0 v f - forward voltage (v) 16360 t j = 25 c t j = 175 c 0 50 100 150 200 250 300 350 25 50 75 100 125 150 175 t j - junction temperature (c) 16363 v r = v rrm p r - reverse power dissipation (mw) p r -limit at 100 % v r p r -limit at 80 % v r
BYW82, byw83, byw84, byw85, byw86 standard avalanche sinterglass diode vishay semiconductors document number: 86051 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 163 fig. 5 - reverse current vs. junction temperature fig. 6 - diode capacitance vs. reverse voltage fig. 7 - thermal response package dimensions in millimeters (inches): sod-64 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16362 v r = v rrm i r - reverse current (a) 0 20 40 60 80 100 0.1 1 10 100 v r - reverse voltage (v) 16364 c d - diode capacitance (pf) f = 1 mhz 1 10 100 1000 z thp - thermal resistance for pulse cond. (k/w) t p - pulse length (s) 94 9568 i frm - repetitive peak forward current (a) 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 10 1 t p /t = 0.05 v rrm = 1000 v r thja =70k/w t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t = 0.01 t amb =25c 45 c 70c 100c 60 c t p /t = 0.02 cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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