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inchange semiconductor product specification silicon npn power transistors 2SC3409 description ? with to-3pn package ? high breakdown voltage ? fast switching speed ? wide area of safe operation applications ? for switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 10 v i c collector current 2 a p c collector power dissipation t c =25 ?? 80 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC3409 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ;r be = ?t 800 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 900 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 10 v v cesat collector-emitter saturation voltage i c =1.5a ;i b =0.3a 5.0 v v besat base-emitter saturation voltage i c =1.5a;i b =0.3a 1.5 v i cbo collector cut-off current v cb =800v; i e =0 10 | a i ebo emitter cut-off current v eb =5v; i c =0 10 | a h fe dc current gain i c =0.5a ; v ce =4v 15
inchange semiconductor product specification 3 silicon npn power transistors 2SC3409 package outline fig.2 outline dimensions

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