features ? low collector to emitter saturation voltage ? mini type package m aximum r atings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 30 v v ceo collector - emitter voltage 25 v v ebo emitter - base voltage 5 v i c collector current 500 m a p c collector power dissipation 200 m w r ja thermal resistance from j u nction to a mbient 625 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 10 a , i e =0 30 v collector - emitter breakdown voltage v (br) c e o i c = 10 ma, i b =0 25 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 5 v collector cut - off current i cbo v cb = 20 v, i e =0 0.1 a emitter cut - off current i ebo v eb = 5 v, i c = 0 0.1 a h fe (1) * v ce = 10 v, i c = 0.15 a 85 340 dc current gain h fe (2) * v ce = 10 v, i c = 0.5 a 40 collector - emitter saturation voltage v ce(sat) * i c = 0.3 a, i b = 0.03 a 0.6 v transition frequency f t v ce = 10 v,i c = 0.05a, f= 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e =0, f=1mhz 15 pf * p ulse test: p ulse w idth 3 50 s, d uty c ycle 2.0%. classification of h fe ( 1 ) rank q r s range 85 C 170 120 C 240 170 C 340 marking wq1 wr1 ws1 so t C 23 1. base 2. emitter 3. col lector 1 www.htsemi.com semiconductor jinyu transistor (npn) 2s d0602
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