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| inchange semiconductor isc product specification isc silicon npn power transistor 2SD1110 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) good linearity of h fe complement to type 2sb849 applications designed for audio frequency power amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 7 a i cp collector current-pulse 12 a p c collector power dissipation @ t c =25 80 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SD1110 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 5.0a; i b = 0.5a 2.0 v v be (sat) base -emitter saturation voltage i c = 5.0a; i b = 0.5a 2.0 v i cbo collector cutoff current v cb = 120v; i e = 0 50 a i ebo emitter cutoff current v eb = 3v; i c = 0 50 a h fe-1 dc current gain i c = 50ma; v ce = 5v 20 h fe-2 dc current gain i c = 1a; v ce = 5v 40 200 c ob output capacitance i e = 0; v cb = 10v; f test = 1.0mhz 190 pf f t current-gain?bandwidth product i c = 0.2a; v ce = 5v 15 mhz ? h fe- 2 classifications s r q 40-80 60-120 100-200 isc website www.iscsemi.cn 2 |
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