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| inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1126 description collector-emitter breakdown voltage- : v (br)ceo = 120v(min) high dc current gain : h fe = 1000(min) @i c = 5a low saturation voltage applications designed for power switching applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 120 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i cp collector current-peak 15 a p c collector power dissipation @ t c =25 50 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1126 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; r be = 120 v v (br)ebo emitter-base breakdown voltage i e = 200ma; i c = 0 7 v v ce( sat )-1 collector-emitter saturation voltage i c = 5a; i b = 10ma b 1.5 v v ce( sat )-2 collector-emitter saturation voltage i c = 10a; i b = 0.1a 3.0 v v be( sat )-1 base-emitter saturation voltage i c = 5a; i b = 10ma b 2.0 v v be( sat )-2 base-emitter saturation voltage i c = 10a; i b = 0.1a 3.5 v i cbo collector cutoff current v cb = 120v; i e =0 100 a i ceo collector cutoff current v ce = 100v; r be = 10 a h fe dc current gain i c = 5a; v ce = 3v 1000 20000 v ecf c-e diode forward voltage i f = 10a 3.0 v switching times t on turn-on time 0.8 s t off turn-off time i c = 5a, i b1 = -i b2 = 10ma 8.0 s isc website www.iscsemi.cn 2 |
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