100v-200v 1.2a erb32-01 thru ERB32-02 web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics m e c h a n i c a l d a t a low cost diffused junction low leakage low forward voltage drop high current capability and s im ilar s olvents easily cleaned with freon,alcohol,isopropanol the plastic material carries u/l recognition 94v-0 high efficiency rectifier case:jedec do--15,molded plastic terminals: axial lead ,solderable per polarity: color band denotes cathode weight: 0.014 ounces,0.39 grams mounting position: any mil- std-202,method 208 ratings at 25 ambient temperature unless otherwise specified. single phase,half wave,60 hz,resistive or inductive load. for capacitive load,derate by 20%. units maximum recurrent peak reverse voltage v rrm v max imum rms v olt age v rms v max imum dc bloc king v olt age v dc v maximum average forw ard rectif ied current 9.5mm lead length, @t a =75 peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @t j =125 max imum ins t ant aneous f or w ar d v olt age @ 1.2a v f v maximum reverse current @t a =25 at rated dc blocking voltage @t a =100 max imum r ev er s e r ec ov er y t ime ( not e1) t rr ns typical junction capacitance (note2) c j pf typical thermal resistance (note3) r ja /w operating junction temperature range t j storage temperature range t stg 100 erb32 - 01 100 70 3. thermal resistance f rom junction to ambient. a 50.0 i r i fsm note: 1. measured with i f =0.5a, i r =1a, i rr =0.25a. 2. measured at 1.0mh z and applied rev erse v oltage of 4.0v dc. - 55 ----- + 150 - 55 ----- + 150 50 i f(av) 1.2 50 200 200 140 erb32 - 02 50 a 5.0 50.0 a 0.92
ratings and characteristic curves erb32-01 thru ERB32-02 e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 100v-200v 1.2a erb32-01 thru ERB32-02 high efficiency rectifier amperes amperes amperes n u m be r o f c y c l e s a t 60 h z instantaneous forward voltage, volts peak forward surge current. reverse voltage,volts fig.5 -- typical forward characteristic fig.4--peak forward surge current instantaneous forward current average forward rectified current. ambient temperature. fig.1--test circuit diagram and reverse recovery time characteristic junction capacitance,pf set time ba se for 20/30 ns /c m notes: 1.rise time=7ns ma x. input impeda nce=1m .22pf 2.rise time=10ns max.source impedance=50 . fig.3--typical junction capacitance fig.2 --forward derating curve 0 0 . 01 0 . 1 1 . 0 10 t j =25 pulse width=300 s 0 . 2 0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6 1 . 8 2 0 40 20 60 0.6 0 0.2 0.4 80 100 120 0.8 1 1.2 1.4 single phase half wave 60hz resistive or inductive load 140 150 t j =25 1 2 4 10 20 40 60 100 200 0 . 1 0 . 2 0 . 4 1 2 4 10 40 1 0 0 20 1 0 20 t j =125 8.3ms single half sine-wave 24 10 81 0 0 40 60 80 10 20 30 40 50 60 70 80 10 n 1. 1 noni n- ducti ve 50 n 1. (+) 25vdc (approx) (-) d. u. t. (+) pulse generator (note2) (-) osci lloscope (note 1) t rr -1.0a -0.25a 0 +0.5a 1cm
|
