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| savantic semiconductor product specification silicon npn power transistors S2000N d escription with to-3p(h)is package high voltage,high speed low collector saturation voltage applications color tv horizontal output applications color tv switching regulator applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (t c =25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 15 a i b base current 4 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 2.5 /w fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors S2000N characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i b =500ma ;v be =-1.7v;l=40mh 700 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 5 v v ce (sat) -1 collector-emitter saturation voltage i c =4.5a ;i b =2.0a 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c =4.5a ;i b =1.0a 5.0 v v be (sat) base-emitter saturation voltage i c =4.5a ;i b =1.0a 1.2 v i cbo collector cut-off current v cb =1500v; v be =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 30 h fe-2 dc current gain i c =4.5a ; v ce =5v 4.5 9 c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 95 pf f t transition frequency i c =0.1a ; v ce =10v 2 mhz switching times t s storage time 8 12 s t f fall time i cp =4.5a;i b1( end ) =1.0a f h =15.75khz 0.4 0.7 s savantic semiconductor product specification 3 silicon npn power transistors S2000N package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm) |
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