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| inchange semiconductor isc product specification isc silicon npn power transistor S2818 description high voltage high switching speed low saturation voltage built-in damper diode applications color tv horizontal output applications absolute maximum ratings (t =25 a ) symbol parameter value unit v ces collector-emitter voltage 1500 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-peak 7.5 a i bm base current-peak 4 a p c collector power dissipation @ t c 95 12.5 w t j junction temperature 115 t stg storage temperature range -65~115 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.6 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor S2818 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0; l= 25mh 700 v v (br)ebo emitter-base breakdown voltage i e = 200ma; i c = 0 5 v v ce (sat) collector-emitter saturation voltage i c = 4.5a; i b = 2a 5.0 v v be (sat) base-emitter saturation voltage i c = 4.5a; i b = 2a 1.5 v i ces collector cutoff current v ce = 1500v; v be = 0 1.0 ma h fe dc current gain i c = 4.5a; v ce = 5v 2.25 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 125 pf f t current-gain?bandwidth product i c = 0.1a; v ce = 5v 7 mhz v ecf c-e diode forward voltage i f = 5a 2.0 v switching times t s storage time 10 s t f fall time i c = 4.5a; i b( end ) = 1.8a 0.7 s isc website www.iscsemi.cn |
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