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| the specifications and curves 200v 1.5a BYW100-200 web site: www.taychipst.com 1 of 2 features e-mail: sales@taychipst.com maximum ratings and electrical characteristics . high efficiency fast recovery rectifier diodes very low conduction losses negligible switching losses low forward and reverse recovery times enable the determination of trr and i rm at 100 c under users conditions symbol parameter value unit v rrm repetitive peak reverse voltage 200 v i frm repetitive peak forward current * tp = 5 m s f = 1khz 80 a i f(av) average forward current * ta = 95 c d = 0.5 1.5 a i fsm surge non repetitive forward current tp=10 ms sinusoidal 50 a t stg storage temperature range -65 +150 c tj maximum operating junction temperature + 150 c t l maximum lead temperature for soldering during 10s at 4mm from case 230 c absolute ratings (limiting values) symbol parameter tests conditions min. typ. max. unit i r * reverse leakage current v r = v rrm tj = 25 c 10 m a tj = 100 c 0.5 ma v f ** forward voltage drop i f = 4.5 a tj = 25 c 1.2 v i f = 1.5 a tj = 100 c 0.78 0.85 static electrical characteristics (per diode) symbol tests conditions min. typ. max. unit trr i f = 1 a di f /dt = - 50 a/ m s v r = 30 v tj = 25 c 35 ns tfr i f = 1.5 a di f /dt = -50 a/ m s measured at 1.1 x v f max. tj = 25 c 30 ns v fp i f = 1.5 a di f /dt = -50 a/ m s tj = 25 c 5v qrr i f = 1.5 a di f /dt = -20 a/ m s v r 30 v tj = 25c 10 nc recovery characteristics
ratings and characteristic curves BYW100-200 e-mail: sales@taychipst.com web site: www.taychipst.com 2 of 2 high efficiency fast recovery rectifier diodes 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 pf(av)(w) d = 0.2 d = 0.5 d = 1 d = 0.05 d = 0.1 t d =tp/t tp if(av) (a) fig. 1: average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 if(av)(a) rth(j-a)=100c/w rth(j-a)=rth(j-l) tamb(c) fig. 2: average forward current versus ambient temperature ( d =0.5). 5 10152025 0 10 20 30 40 50 60 70 80 90 100 110 rth(c/w) rth(j-a) rth(j-l) lleads(mm) fig. 3: thermal resistance versus lead length. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.10 1.00 10.00 50.00 ifm(a) tj=25c tj=100c tj=100c (typical values) vfm(v) fig. 5: forward voltage drop versus forward current (maximum values). 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) single pulse d = 0.1 d = 0.2 d = 0.5 tp(s) fig. 4: variation of thermal impedance junction to ambient versus pulse duration (recommended pad 1 10 100 200 1 2 5 10 20 vr(v) c(pf) f=1mhz tj=25c fig. 6: junction capacitance versus reverse voltage applied (typical values). 1 10 100 0 50 100 150 trr(ns) if=1.5a vr=30v 90% confidence tj=100c tj=25c dif/dt(a/s) fig. 7: reverse recovery time versus di f /dt . 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 irm(a) if=1.5a vr=30v 90% confidence tj=100c tj=25c dif/dt(a/s) fig. 8: peak reverse recovery current versus di f /dt. 200v 1.5a BYW100-200 |
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