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  high-current complementary silicon transistors . . . for use as output devices in complementary general purpose amplifier applications. ? high dc current gain e h fe = 1000 (min) @ i c = 25 adc h fe = 400 (min) @ i c = 50 adc ? curves to 100 a (pulsed) ? diode protection to rated i c ? monolithic construction with builtin baseemitter shunt resistor ? junction temperature to +200  c ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ???? ? ?? ? ???? mj11028 mj11029 ???? ? ?? ? ???? mj11032 mj11033 ??? ? ? ? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 60 ???? ???? 120 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ???? ???? 60 ???? ???? 120 ??? ??? vdc ???????????? ???????????? emitterbase voltage ???? ???? v eb ??????? ??????? 5 ??? ??? vdc ???????????? ???????????? collector current e continuous peak ???? ???? i c i cm ??????? ??????? 50 100 ??? ??? adc ???????????? ???????????? base current e continuous ???? ???? i b ??????? ??????? 2 ??? ??? adc ???????????? ? ?????????? ? ???????????? total power dissipation @ t c = 25  c derate above 25  c @ t c = 100  c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 300 1.71 ??? ? ? ? ??? watts w/  c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 55 to +200 ??? ? ? ? ???  c ??????????????????????? ??????????????????????? thermal characteristics ????????????? ????????????? characteristic ???? ???? symbol ?????? ?????? max ??? ??? unit ????????????? ? ??????????? ? ????????????? maximum lead temperature for soldering purposes for  10 seconds ???? ? ?? ? ???? t l ?????? ? ???? ? ?????? 275 ??? ? ? ? ???  c ????????????? ????????????? thermal resistance junction to case ???? ???? r q jc ?????? ?????? 0.584 ??? ???  c figure 1. darlington circuit schematic base emitter collector 3.0 k 25 pnp mj11029 mj11033 base emitter collector 3.0 k 25 npn mj11028 mj11032 preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor  ? semiconductor components industries, llc, 2001 may, 2001 rev. 3 1 publication order number: mj11028/d mj11028 mj11032 mj11029 mj11033 50 ampere complementary silicon darlington power transistors 60120 volts 300 watts *on semiconductor preferred device npn pnp * * case 197a05 to204ae (to3)
mj11028 mj11032 mj11029 mj11033 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25  c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ?????????????????????? collectoremitter breakdown voltage (1) mj11028, mj11029 (i c = 1 00 madc, i b = 0) mj11032, mj11033 ????? ????? v (br)ceo ??? ??? 60 120 ???? ???? e e ??? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter leakage current (v ce = 60 vdc, r be = 1 k ohm) mj11028, mj11029 (v ce = 120 vdc, r be = 1 k ohm) mj11032, mj11033 (v ce = 60 vdc, r be = 1 k ohm, t c = 150  c) mj11028, mj11029 (v ce = 120 vdc, r be = 1 k ohm, t c = 150  c) mj11032, mj11033 ????? ? ??? ? ? ??? ? ? ??? ? ????? i cer ??? ? ? ? ? ? ? ? ? ? ??? e e e e ???? ? ?? ? ? ?? ? ? ?? ? ???? 2 2 10 10 ??? ? ? ? ? ? ? ? ? ? ??? madc ?????????????????????? ?????????????????????? emitter cutoff current (v be = 5 vdc, i c = 0) ????? ????? i ebo ??? ??? e ???? ???? 5 ??? ??? madc ?????????????????????? collectoremitter leakage current (v ce = 50 vdc, i b = 0) ????? i ceo ??? e ???? 2 ??? madc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 25 adc, v ce = 5 vdc) (i c = 50 adc, v ce = 5 vdc) ????? ? ??? ? ????? h fe ??? ? ? ? ??? 1 k 400 ???? ? ?? ? ???? 18 k e ??? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 25 adc, i b = 250 madc) (i c = 50 adc, i b = 500 madc) ????? ? ??? ? ? ??? ? ????? v ce(sat) ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 2.5 3.5 ??? ? ? ? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ?????????????????????? baseemitter saturation voltage (i c = 25 adc, i b = 200 madc) (i c = 50 adc, i b = 300 madc) ????? ? ??? ? ????? v be(sat) ??? ? ? ? ??? e e ???? ? ?? ? ???? 3.0 4.5 ??? ? ? ? ??? vdc (1) pulse test: pulse width  300 m s, duty cycle  2.0%.
mj11028 mj11032 mj11029 mj11033 http://onsemi.com 3 i c , collector current (amp) 100 0.2 figure 2. dc safe operating area v ce , collector-emitter voltage (volts) 0.1 0.5 1 2 5 10 20 50 200 20 10 5 50 2 1 0.5 0.2 bonding wire limited thermally limited @ t c = 25 c second breakdown limited mj11028, 29 mj11032, 33 100 there are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 2 is based on t j(pk) = 200  c; t c is variable depending on conditions. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v ce , collector-emitter voltage (volts) i c , collector current (amp) h fe , dc current gain 100 k i c , collector current (amp) 50 k 20 k 10 k 5 k 2 k 500 figure 3. dc current gain 1 2 5 10 100 20 50 figure 4. aono voltage 100 v ce = 5 v t j = 25 c 1 k 200 mj11029, mj11033 pnp mj11028, mj11032 npn 5 4 3 2 1 1 2 5 10 100 20 50 0 3 t j = 25 c i c /i b = 100 v be(sat) 80 m s (pulsed) mj11029, mj11033 pnp mj11028, mj11032 npn 80 m s (pulsed) v ce(sat)
mj11028 mj11032 mj11029 mj11033 http://onsemi.com 4 package dimensions case 197a05 to204ae (to3) issue j notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. style 1: pin 1. base 2. emitter case: collector dim min max min max millimeters inches a 1.530 ref 38.86 ref b 0.990 1.050 25.15 26.67 c 0.250 0.335 6.35 8.51 d 0.057 0.063 1.45 1.60 e 0.060 0.070 1.53 1.77 g 0.430 bsc 10.92 bsc h 0.215 bsc 5.46 bsc k 0.440 0.480 11.18 12.19 l 0.665 bsc 16.89 bsc n 0.760 0.830 19.31 21.08 q 0.151 0.165 3.84 4.19 u 1.187 bsc 30.15 bsc v 0.131 0.188 3.33 4.77 a n e c k t seating plane 2 pl d m q m 0.30 (0.012) y m t m y m 0.25 (0.010) t q y 2 1 l g b v h u on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 13036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mj11028/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland


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