1 UM6016 n-ch 60v fast switching mosfets symbol parameter rating units v ds drain-source voltage 60 v v gs gate-sou r ce voltage 20 v i d @t a =25 continuous drain current, v gs @ 10v 1 8 a i d @t a =70 continuous drain current, v gs @ 10v 1 6.4 a i dm pulsed drain current 2 32 a eas single pulse avalanche energy 3 123 mj i as avalanche current 38 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w r jc thermal resistance junction-case 1 --- 24 /w id 60v 12m ? 8a the UM6016 is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . the UM6016 meet the rohs and green product requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z lcd/led back light absolute maximum ratings thermal data sop8 pin configuration product summery bv dss r ds(on)
2 n-ch 60v fast switching mosfets symbol parameter conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 60 --- --- v bv dss / t j bv dss temperature coefficient reference to 25 , i d =1ma --- 0.052 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =8a --- 10 12 m v gs =4.5v , i d =6a --- 12 15 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 --- 2.5 v v gs(th) v gs(th) temperature coefficient --- -5.76 --- mv/ i dss drain-source leakage current v ds =48v , v gs =0v , t j =25 --- --- 1 ua v ds =48v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs = 20v , v ds =0v --- --- 100 na gfs forward transconductance v ds =5v , i d =8a --- 45 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 1.5 3 q g total gate charge (4.5v) v ds =48v , v gs =4.5v , i d =8a --- 30 42 nc q gs gate-source charge --- 10.7 15 q gd gate-drain charge --- 9.4 13.2 t d(on) turn-on delay time v dd =30v , v gs =10v , r g =3.3 , i d =8a --- 10.6 21.2 ns t r rise time --- 9 16 t d(off) turn-off delay time --- 65.6 131 t f fall time --- 4.8 9.6 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 3240 4536 pf c oss output capacitance --- 210 294 c rss reverse transfer capacitance --- 146 204 symbol parameter conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =30a 77 --- --- mj symbol parameter conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 8 a i sm pulsed source current 2,6 --- --- 32 a v sd diode forward voltage 2 v gs =0v , i s =a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =8a , di/dt=100a/s , t j =25 --- 18 --- ns q rr reverse recovery charge --- 15.6 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width Q 300us , duty cycle Q 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =38a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) guaranteed avalanche characteristics diode characteristics UM6016
3 n-ch 60v fast switching mosfets 0 8 16 24 32 0 0.1 0.2 0.3 0.4 0.5 v ds , drain-to-source voltage (v) i d drain current (a) v gs =7v v gs =5v v gs =4.5v v gs =3v v gs =10v 10 10 11 11 12 46810 v gs (v) r dson (m ? ) i d =8a 0 2 4 6 8 10 12 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s source current(a) t j =150 t j =25 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( ) normalized v gs(th) 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance v.s gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j UM6016
4 n-ch 60v fast switching mosfets 10 100 1000 10000 1 5 9 13 17 21 25 v ds drain to source voltage(v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 1000 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform UM6016
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