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| 1 . 9 2. 80? 0. 05 1. 60? 0. 05 0 . 3 5 2 . 9 2 ? 0 . 0 5 0 . 9 5 ? 0 . 0 2 5 1 . 0 2 transistor (npn) features power dissipation p cm : 0.2 w (tamb=25 ) collector current i cm : 0.1 a collector-base voltage v (br)cbo : 20 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic=10 a, i e =0 20 v collector-emitter breakdown voltage v (br)ceo ic= 1ma, i b =0 12 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c =0 3 v collector cut-off current i cbo v cb = 10 v, i e =0 1 a emitter cut-off current i ebo v eb = 1v , i c =0 1 a dc current gain h fe v ce = 10v, i c = 20ma 50 300 transition frequency f t v ce =10v, i c = 20ma 6 ghz noise figure nf v ce =10v, i c = 7ma, f = 1ghz 2 db classification of h fe marking r23 r24 r25 rank q r s range 50-100 80-160 125-250 sot-23-3l 1. base 2. emitter 3. collector 2SC3356 1 date:2011/05 www.htsemi.com semiconductor jinyu
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