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| inchange semiconductor product specification silicon pnp power transistors BD910 bd912 description ? ? with to-220c package ? complement to type bd909 bd911 applications ? intented for use in power linear and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit BD910 -80 v cbo collector-base voltage bd912 open emitter -100 v BD910 -80 v ceo collector-emitter voltage bd912 open base -100 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -5 a p c collector power dissipation t c ? 25 ?? 90 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.4 ?? /w f
inchange semiconductor product specification 2 silicon pnp power transistors BD910 bd912 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BD910 -80 v ceo(sus) collector-emitter sustaining voltage bd912 i c =-0.1a; i b =0 -100 v v cesat-1 collector-emitter saturation voltage i c =-5 a;i b =-0.5 a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-10a;i b =-2.5 a -3.0 v v besat base-emitter saturation voltage i c =-10a;i b =-2.5 a -2.5 v v be base-emitter voltage i c =-5a ; v ce =-4v -1.5 v BD910 v cb =-80v; i e =0 t c =25 ?? -0.5 -5.0 i cbo collector cut-off current bd912 v cb =-100v; i e =0 t c =25 ?? -0.5 -5.0 ma BD910 v ce =-40v; i b =0 i ceo collector cut-off current bd912 v ce =-50v; i b =0 -1.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-0.5a ; v ce =-4v 40 250 h fe-2 dc current gain i c =-5a ; v ce =-4v 15 150 h fe-3 dc current gain i c =-10a ; v ce =-4v 5 f t transition frequency i c =-0.5a ; v ce =-4v 3 mhz inchange semiconductor product specification 3 silicon pnp power transistors BD910 bd912 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon pnp power transistors BD910 bd912 inchange semiconductor product specification 5 silicon pnp power transistors BD910 bd912 |
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