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| savantic semiconductor product specification silicon npn power transistors BUX11 description with to-3 package high current capability fast switching speed applications for use in switching and linear applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 200 v v ebo emitter-base voltage open collector 7 v i c collector current 20 a i cm collector current-peak t p =10ms 25 a i b base current 4 a p t total power dissipation t c =25 150 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.17 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUX11 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2ma; i b =0 200 v v (br)ebo emitter-base breakdown voltage i e =50ma; i c =0 7 v v cesat-1 collector-emitter saturation voltage i c =6 a;i b =0.6a 0.6 v v cesat-2 collector-emitter saturation voltage i c =12 a;i b =1.5 a 1.5 v v besat base-emitter saturation voltage i c =12 a;i b =1.5 a 1.5 v i cex collector cut-off current v ce =250v;v be =-1.5v t c =125 1.5 6.0 ma i ceo collector cut-off current v ce =160v;i b =0 1.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =6a ; v ce =2v 20 60 h fe-2 dc current gain i c =12a ; v ce =4v 10 f t transition frequency i c =1a ; v ce =15v; f=10mhz 8.0 mhz switching times t on turn-on time i c =12a ;i b1 =1.5a v cc =150v 1.0 s t s storage time 1.8 s t f fall time i c =12a ;i b1 =-i b2 =1.5a v cc =150v 0.4 s savantic semiconductor product specification 3 silicon npn power transistors BUX11 package outline fig.2 outline dimensions |
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