sot23 pnp silicon planar high voltage transistor issue 2 - november 1995 j features * 350 volt v ceo * gain of 15 at i c =-100ma applications * suitable for amplifier and switching products complementary type fmmt6517 partmarking detail ? 520 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -350 v collector-emitter voltage v ceo -350 v emitter-base voltage v ebo -5 v continuous collector current i c -500 ma power dissipation at t amb = 25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. breakdown voltages v (br)cbo -350 v i c =-100 m a, i e =0 v (br)ceo -350 v i c =-1ma, i b =0* v (br)ebo -5 v i e =-10 m a, i c =0 cut-off currents i cbo -50 na v cb =-250v, i e =0 i ebo -50 na v eb =-3v, i c =0 collector-emitter saturation voltage v ce(sat) -0.3 -0.35 -0.5 -1.0 v v v v i c =-10ma, i b =-1ma* i c =-20ma, i b =-2ma* i c =-30ma, i b =-3ma* i c =-50ma, i b =-5ma* base-emitter saturation voltage v be(sat) -0.75 -0.85 -0.90 v v v i c =-10ma, i b =-1ma* i c =-20ma, i b =-2ma* i c =-30ma, i b =-3ma* base-emitter turn-on voltage v be(on) -2.0 v i c =-100ma, v ce =-10v* static forward current transfer ratio h fe 20 30 30 20 15 200 200 i c =-1ma, v ce =-10v i c =-10ma, v ce =-10v* i c =-30ma, v ce =-10v* i c =-50ma, v ce =-10v* i c =-100ma, v ce =-10v* output capacitance c obo 6pfv cb =20v, f=1mhz transition frequency f t 50 mhz i c =-10ma, v ce =-20v, f=20mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% FMMT6520 c b e sot23 3 - 172
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