transistors with built-in resistor 1 publication date: june 2002 sjh00052aed NP0G3D3 silicon pnp epitaxial planar transistor (tr1) silicon npn epitaxial planar transistor (tr2) for digital circuits features ? two elements incorporated into one package ? suitable for high density package and downsizing of the equipment ? automatic insertion with the taping is possible basic part number of element ? unr31a3 unr32at absolute maximum ratings t a = 25 c marking symbol: 3h internal connection unit: mm parameter symbol rating unit tr1 collector to base voltage v cbo ? 50 v collector to emitter voltage v ceo ? 50 v collector current i c ? 80 ma tr2 collector to base voltage v cbo 50 v collector to emitter voltage v ceo 50 v collector current i c 80 ma overall total power dissipation * p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c 1: base (tr1) 4: collector (tr2) 2: base (tr2) 5: emitter (tr1) 3: emitter (t r2) 6: collector (tr1) sssmini6-f1 package note) * : measuring on substrate at 17 mm 10 mm 1 mm 0 to 0.02 654 1 2 3 1.00 0.05 (0.10) 0.10 1.00 0.05 display at no.1 lead 0.80 0.05 0.10 (0.35) (0.35) 0.37 +0.03 - 0.02 0.12 +0.03 - 0.02 1 tr2 tr1 23 4 6 5
NP0G3D3 2 sjh00052aed electrical characteristics t a = 25 c 3 c ? tr1 ? tr2 parameter symbol conditions min typ max unit collector to base voltage v cbo i c = 10 a, i e = 050 v collector to emittter voltage v ceo i c = 2 ma, i b = 050v collector cutoff current i cbo v cb = 50 v, i e = 0 0.1 a i ceo v ce = 50 v, i b = 0 0.5 emitter cutoff current i ebo v eb = 6 v, i c = 0 0.2 ma forward current transfer ratio h fe v ce = 10 v, i c = 5 ma 80 400 ? collector to emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v high level output voltage v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v low level output voltage v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 22 + 30% k ? resistance ratio r 1 / r 2 0.47 ? gain bandwidth product f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz p t ? t a parameter symbol conditions min typ max unit collector to base voltage v cbo i c = ? 10 a, i e = 0 ? 50 v collector to emittter voltage v ceo i c = ? 2 ma, i b = 0 ? 50 v collector cutoff current i cbo v cb = ? 50 v, i e = 0 ? 0.1 a i ceo v ce = ? 50 v, i b = 0 ? 0.5 emitter cutoff current i ebo v eb = ? 6 v, i c = 0 ? 0.1 ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 5 ma 80 ? collector to emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v high level output voltage v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v low level output voltage v ol v cc = ? 5 v, v b = ? 3.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? resistance ratio r 1 / r 2 0.8 1.0 1.2 ? gain bandwidth product f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz common characteristics chart 0 140 60 20 80 120 40 100 0 140 120 100 60 80 40 20 total power dissipation p t ( mw ) ambient temperature t a ( c )
NP0G3D3 3 sjh00052aed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of tr1 0 ? 12 ? 10 ?8 ? 2 ? 6 ?4 0 ? 90 ? 80 ? 70 ? 60 ? 50 ? 30 ? 40 ? 20 ? 10 t a = 25 c i b = ? 10 ma ? 9 ma ? 8 ma ? 7 ma ? 6 ma ? 5 ma ? 4 ma ? 3 ma ? 2 ma ? 1 ma collector to emitter voltage v ce ( v ) collector current i c (m a ) ? 0.1 ? 1 ?1 0 ? 100 ? 0.01 ? 10 ? 1 ? 0.1 t a = 75 c 25 c ? 25 c i c / i b = 10 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) ? 1 ? 10 ? 100 0 250 200 150 100 50 t a = 75 c 25 c ? 25 c v ce = ? 10 v collector current i c ( ma ) forward current transfer ratio h fe 0 ? 40 ? 32 ? 8 ? 24 ? 16 1 10 f = 1 mhz t a = 25 c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 ? 1 ? 100 ? 10 v o = ? 5 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 100 ? 10 ? 1 v o = ? 0.2 v t a = 25 c output current i o ( ma ) input voltage v in ( v )
NP0G3D3 4 sjh00052aed i c ? v ce v ce(sat) ? i c h fe ? i c c ob ? v cb i o ? v in v in ? i o characteristics charts of tr2 012 10 8 26 4 0 90 80 70 60 50 30 40 20 10 t a = 25 c i b = 1.0 ma 0. 9 ma 0. 8 ma 0. 7 ma 0. 6 ma 0. 5 ma 0. 4 ma 0. 3 ma 0. 2 ma 0. 1 ma collector to emitter voltage v ce ( v ) collector current i c (m a ) 1 10 100 0.01 10 1 0.1 t a = 75 c 25 c ? 25 c i c / i b = 10 collector current i c ( ma ) collector to emitter saturation voltage v ce(sat) ( v ) 1 10 100 0 400 300 100 250 350 200 50 150 t a = 75 c 25 c ? 25 c v ce = 10 v collector current i c ( ma ) forward current transfer ratio h fe 040 10 30 20 35 525 15 1 10 f = 1 mhz t a = 25 c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 100 10 1 0 2.5 2.0 0.5 1.5 1.0 v o = 5 v t a = 25 c input voltage v in ( v ) output current i o ( ma ) 0.1 1 10 100 0.1 10 1 v o = 0.2 v t a = 25 c output current i o ( ma ) input voltage v in ( v )
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