november 2009 fdd5n50nzf n-channel mosfet ?2009 fairchild semiconductor corporation fdd5n50nzf rev. a www.fairchildsemi.com 1 unifet-ii tm mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter fdd5n50nzf units v dss drain to source voltage 500 v v gss gate to source voltage 25 v i d drain current -continuous (t c = 25 o c) 3.7 a -continuous (t c = 100 o c) 2.2 i dm drain current - pulsed (note 1) 14 a e as single pulsed avalanche energy (note 2) 165 mj i ar avalanche current (note 1) 3.3 a e ar repetitive avalanche energy (note 1) 6.25 mj dv/dt peak diode recovery dv/dt (note 3) 15 v/ns p d power dissipation (t c = 25 o c) 62.5 w - derate above 25 o c0.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter fdd5n50nzf units r jc thermal resistance, junction to case 2 o c/w r ja thermal resistance, junction to ambient 62.5 fdd5n50nzf n-channel mosfet 500v, 3.7a, 1.75 ? features ?r ds(on) = 1.47 ? ( typ.)@ v gs = 10v, i d = 1.85a ? low gate charge ( typ. 9nc) ?low c rss ( typ. 4pf) ? fast switching ? 100% avalanche tested ? improved dv/dt capability ? esd imoroved capability ?rohs compliant description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advance technology has been es pecially tailored to minimize on-state resistance, prov ide superior switching performance, and withstand high en ergy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switching mode power supplies and active power factor correction. g s d g s d g s d d-pak *drain current limited by maximum junction temperature
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity fdd5n50nzf FDD5N50NZFTM d-pak 380mm 16mm 2500 symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 a, v gs = 0v, t c = 25 o c 500 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.5-v/ o c i dss zero gate voltage drain current v ds = 500v, v gs = 0v - - 10 a v ds = 400v, v gs = 0v,t c = 125 o c - - 100 i gss gate to body leakage current v gs = 25v, v ds = 0v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10v, i d = 1.85a - 1.47 1.75 ? g fs forward transconductance v ds = 20v, i d = 1.85a (note 4) -4.2-s c iss input capacitance v ds = 25v, v gs = 0v f = 1mhz - 365 485 pf c oss output capacitance - 50 65 pf c rss reverse transfer capacitance - 4 8 pf q g(tot) total gate charge at 10v v ds = 400v i d = 3.7a v gs = 10v (note 4, 5) - 9 12 nc q gs gate to source gate charge - 2 - nc q gd gate to drain ?miller? charge - 4 - nc t d(on) turn-on delay time v dd = 250v, i d = 3.7a v gs = 10v, r gen = 25 ? (note 4, 5) -1235ns t r turn-on rise time - 19 50 ns t d(off) turn-off delay time - 31 70 ns t f turn-off fall time - 22 55 ns i s maximum continuous drain to source diode forward current - - 3.7 a i sm maximum pulsed drain to source diode forward current - - 14 a v sd drain to source diode forward voltage v gs = 0v, i sd = 3.7a - - 1.5 v t rr reverse recovery time v gs = 0v, i sd = 3.7a di f /dt = 100a/ s (note 4) -87-ns q rr reverse recovery charge - 0.15 - c notes: 1. repetitive rating: pulse width limi ted by maximum junction temperature 2. l = 23mh, i as = 3.7a, v dd = 50v, r g = 25 ? , starting t j = 25 c 3. i sd 3.7a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 300 s, dual cycle 2% 5. essentially independent of operating temperature typical characteristics
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.1 1 10 0.03 0.1 1 10 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v i d , drain current[a] v ds , drain-source voltage[v] 25 345678 0.1 1 10 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.4 0.8 1.2 1.6 1 10 50 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0246810 1.2 1.6 2.0 2.4 2.8 3.2 3.6 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ? ] , drain-source on-resistance i d , drain current [a] 0246810 0 2 4 6 8 10 *note: i d = 3.3a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 30 0 200 400 600 800 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -75 -50 0 50 100 150 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] 1 10 100 1000 0.01 0.1 1 10 20 30 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 25 50 75 100 125 150 0 1 2 3 4 5 i d , drain current [a] t c , case temperature [ o c ] 10 -5 10 -4 10 -3 10 -2 10 -1 1 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 5 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 6 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( dut ) v dd body d iode forw ard volta g e d rop v sd i fm , body d iode forw ard c urrent body d iode r everse c urrent i rm body d iode r ecovery dv/dt di/dt d = g ate pulse w idth gate pulse period -------------------------- d = g ate pulse w idth gate pulse period --------------------------
fdd5n50nzf n-channel mosfet fdd5n50nzf rev. a www.fairchildsemi.com 7 mechanical dimensions d-pak dimensions in millimeters
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