vishay g4a to G4J document number 86087 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 1 17133 standard sinterglass diode \ features ? high temperature metallurgically bonded con- structed rectifiers cavity-free glass passivated junction hermetically sealed package 3.0 ampere operation at t amb = 75 c with no ther- mal runaway mechanical data case: sintered glass case, g4 terminals: solder plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: 1040 mg parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part type differentiation package g4a v rrm = 50 v g4 g4b v rrm = 100 v g4 g4d v rrm = 200 v g4 g4g v rrm = 400 v g4 G4J v rrm = 600 v g4 parameter te s t c o n d i t i o n part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics g4a v r = v rrm 50 v see electrical characteristics g4b v r = v rrm 100 v see electrical characteristics g4d v r = v rrm 200 v see electrical characteristics g4g v r = v rrm 400 v see electrical characteristics G4J v r = v rrm 600 v maximum average forward rectified current 0.375 " (9.5 mm) lead length at t amb = 70 c i f(av) 3.0 a
www.vishay.com 2 document number 86087 rev. 2, 28-jan-03 vishay g4a to G4J vishay semiconductors maximum thermal resistance t amb = 25 c, unless otherwise specified 1) thermal resistance from junction to ambien t and from junction to lead at 0.375 " (9.5 mm) lead length, with both leads mounted between heatsinks electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (jedec method) i fsm 100 a maximum full load reverse current full cycle average 0.375 " (9.5 mm) lead length at t amb = 70 c i r(av) 200 a operating junction and storage temperature range t j , t stg - 55 to + 175 c parameter symbol value unit typical thermal resistance 1) r ja 22 k/w r jl 12 k/w parameter test condition symbol ty p. max unit maximum instantaneous forward voltage i f = 3.0 a v f 1.1 v maximum reverse current v r = v rrm , t amb = 25 c i r 1.0 a v r = v rrm , t amb = 100 c i r 100 a typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 3.0 s typical junction capacitance v r = 4.0 v, f = 1 mhz c j 40 pf parameter test condition part symbol value unit figure 1. forward current derating curve 0 4.0 2.0 3.0 25 0 50 75 100 125 150 175 average forward rectified current (a) ambient tem p erature ( c ) 1.0 60h z resistive or inductive load 0.375 (9.5mm) lead length gg4a_01 figure 2. maximum non-repetitive peak forward surge current peak forward surge current (a) 10 100 200 1 100 10 number of cycles at 60 h z t j =t j max. 8.3ms single half sine-wave (jedec method) gg4a_02
vishay g4a to G4J document number 86087 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 3 figure 3. typical instantaneous forward characteristics figure 4. typical reve rse characteristics figure 5. typical j unction capacitance 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.2 instantaneous forward voltage (v) 0.01 0.1 10 30 1 instantaneous forward current (a) t j =25 c t j = 150 c pulse width = 300 s 1% duty cycle gg4a_03 020 60 40 100 80 instantaneous reverse current ( a) percent of rated peak reverse voltage (%) t j = 125 c t j =25 c 0.01 0.1 10 20 1 t j =75 c 10 gg4a_04 reverse volta g e (v) junction capacitance (pf) 1 10 100 100 10 t j =25 c f = 1.0mh z v sig = 50mvp-p gg4a_05
www.vishay.com 4 document number 86087 rev. 2, 28-jan-03 vishay g4a to G4J vishay semiconductors package dimensions in inches (mm) 0.180 (4.6) 0.115 (2.9) 0.042 (1.07) 0.038 (0.962) dia. dia. max. 0.300 (7.6) 1.0 (25.4) min. 1.0 (25.4) min. 17032
vishay g4a to G4J document number 86087 rev. 2, 28-jan-03 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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