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  bas 79a ... bas 79d oct-07-1999 1 silicon switching diodes ? switching applications ? high breakdown voltage ? common cathode vps05163 1 2 3 4 eha00005 1 2, 4 3 type marking pin configuration package bas 79a bas 79b bas 79c bas 79d bas 79a bas 79b bas 79c bas 79d 1 = a1 1 = a1 1 = a1 1 = a1 2=c1/2 2=c1/2 2=c1/2 2=c1/2 3 = a2 3 = a2 3 = a2 3 = a2 4=c1/2 4=c1/2 4=c1/2 4=c1/2 sot-223 sot-223 sot-223 sot-223 maximum ratings parameter symbol bas 79 a bas 79 b bas 79 c bas 79d unit diode reverse voltage v r 50 100 200 400 v peak reverse voltage v rm 50 100 200 400 forward current i f 1 a peak forward current i fm 1 surge forward current, t = 1 s i fs 10 total power dissipation , t s = 114 c p tot 1.2 w junction temperature t j 150 c storage temperature t st g -65 ... 150 thermal resistance junction - ambient 1) 170 r thja k/w r thjs 30 junction - soldering point 1) package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bas 79a ... bas 79d oct-07-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 100 a bas 79a bas 79b bas 79c bas 79d v (br) 50 100 200 400 - - - - - - - - v forward voltage i f = 1 a i f = 2 a v f - - - - 1.6 2 reverse current v r = v rmax i r - - 1 a reverse current v r = v rmax , t a = 150 c i r - - 50 ac characteristics diode capacitance v r = 0 v, f = 1 mhz c d - 10 - pf reverse recovery time i f = 200 ma, i r = 200 ma, r l = 100 ? , measured at i r = 200ma t rr - 1 - s test circuit for reverse recovery time ehn00021 f dut 90% 10% r v r t t t t rr p r t = 20 ma f oscillograph pulse generator: t p = 100ns, d = 0.05, t r = 0.6ns, r i = 50 ? oscillograph: r = 50 ? , t r = 0.35ns, c 1pf
bas 79a ... bas 79d oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on epoxy 0 0.0 ehb00049 bas 79a...d f a t ; t s 50 100 ?c 150 t a s t 0.4 0.8 1.0 1.2 0.6 0.2 a forward current i f = f ( v f ) t a = 25c 0 ehb00050 bas 79a...d v f f 1v2 a 10 1 10 0 10 -1 -2 10 -3 10 reverse current i r = f ( t a ) v r = v rmax 0 50 100 150 bas 79a...d ehb00051 t a r ? c max typ. 5 5 10 1 10 2 10 3 10 4 5 10 5 na


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