absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 12 * i d @ v gs = 12v, t c = 100c continuous drain current 10 i dm pulsed drain current 48 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 270 mj i ar avalanche current 12 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt a 9.6 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHF57034 power mosfet 12/01/99 www.irf.com 1 60v, n-channel ? technology product summary part number radiation level r ds(on) i d IRHF57034 100k rads (si) 0.048 w 12*a irhf53034 300k rads (si) 0.048 w 12*a irhf54034 600k rads (si) 0.048 w 12*a irhf58034 1000k rads (si) 0.060 w 12*a features: n single event effect (see) hardened n ultra low r ds(on) n neutron tolerant n identical pre- and post-electrical test conditions n repetitive avalanche ratings n dynamic dv/dt ratings n simple drive requirements n ease of paralleling n hermetically sealed for footnotes refer to the last page r r 5 to-39 * current is limited by internal wire diameter thru-hole (to-39) pd - 93791
IRHF57034 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175 typical socket mount c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) 12* i sm pulse source current (body diode) 48 v sd diode forward voltage 1.5 v t j = 25c, i s = 12a, v gs = 0v ? t rr reverse recovery time 100 ns t j = 25c, i f = 12a, di/dt 3 100a/ m s q rr reverse recovery charge 300 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by internal wire diameter electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 60 v v gs = 0v, i d = 1.0ma d bv dss / d t j temperature coefficient of breakdown 0.062 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state 0.048 w v gs = 12v, i d = 10a resistance v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 12 s ( )v ds > 15v, i ds = 10a ? i dss zero gate voltage drain current 10 v ds = 48v ,v gs =0v 25 v ds = 48v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 45 v gs =12v, i d = 12a q gs gate-to-source charge 10 nc v ds = 30v q gd gate-to-drain (miller) charge 15 t d (on) turn-on delay time 25 v dd = 30v, i d = 12a t r rise time 100 r g = 7.5 w t d (off) turn-off delay time 35 t f fall time 30 l s + l d total inductance 7.0 measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance 1160 v gs = 0v, v ds = 25v c oss output capacitance 530 pf f = 1.0mhz c rss reverse transfer capacitance 18 na w ? nh ns m a
www.irf.com 3 pre-irradiation IRHF57034 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 60 ? 60 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage ? 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 10 a v ds = 48v, v gs =0v r ds(on) static drain-to-source ? ? 0.034 ? 0.043 w v gs = 12v, i d =10a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.048 ? 0.060 w v gs = 12v, i d =10a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHF57034, irhf53034 and irhf54034 2. part number irhf58034 fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.5 ? 1.5 v v gs = 0v, i s = 12a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page 0 10 20 30 40 50 60 70 0 -5 -10 -15 -20 vgs vds kr xe au ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v kr 39.2 300 37.4 60 60 60 52 34 xe 63.3 300 29.2 46 46 35 25 15 au 86.6 2068 106 35 35 27 20 14
IRHF57034 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 12a
www.irf.com 5 pre-irradiation IRHF57034 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 12v ds v = 30v ds v = 48v ds 1 10 100 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms 0.1 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j
IRHF57034 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 12v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHF57034 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 12v 25 50 75 100 125 150 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.4a 7.6a 12a .
IRHF57034 pre-irradiation 8 www.irf.com ? pulse width 300 m s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 48 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 3.74 mh peak i l = 12a, v gs = 12v a i sd 12a, di/dt 244a/ m s, v dd 60v, t j 150c case outline and dimensions to-205af (modified to-39) world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 data and specifications subject to change without notice. 12/99 footnotes: legend 1- source 2- gate 3- drain
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