n2206 / 83105 ms ot b8-5998,b8-5997 noa0006-1/8 la7161bm/bv overview the la7161bm/bv is a vhf band rf module. it supports us3, 4ch, jpn1, 2ch, twn13ch. functions ? rf vco (agc). ? rf mixer. ? rf buffer. ? video clamp. ? white clip. ? audio fm. ? 4v regulator. ? reference osc. specifications maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 7.0 v allowable power dissipation pd max ta 75 c 350* mw operating temperature topr -20 to +75 c storage temperature tstg -55 to +150 c * mounted to the glass epoxy resin made board (114.3mm 76.1mm 1.6mm) operating conditions at ta = 25 c parameter symbol conditions ratings unit recommended operating voltage v cc 5.0 v operating voltage range v cc op 4.5 to 5.5 v ordering number : ena0006 monolithic linear ic vhf band rf modulator (us3, 4ch, jpn1, 2ch, twn13ch compatible) any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
la7161bm/bv no.a0006-2/8 electrical characteristics/operating characteristics at ta = 25 c, v cc = 5.0v, measured with us3ch unless otherwise specified parameter symbol conditions ratings unit min typ max current drain 1 i cc 1 no signal, pin 6 high 26 37 48 ma current drain 2 i cc 2 no signal, pin 6 low 17 25 33 ma regulator voltage vreg no signal 3.7 3.9 4.1 v antenna driver voltage vanton pin 6 high, 220 load 3.2 3.5 3.8 v rf type video carrier output us pus no signal (note 1) 85 87 89 db video carrier output jp pjp no signal (note 1) 84.5 86.5 88.5 db video carrier output tw ptwn no signal (note 1) 84 86 88 db audio carrier output ratio p/s s: fp+4.5mhz 14.5 16 17.5 db audio 2 nd harmonic distortion p/s2 s2: fp+2 4.5mhz 50 65 db audio 3 rd harmonic distortion p/s3 s3: fp+3 4.5mhz 45 55 db chroma beat p/cb vin = 3.58mhz , 0.6vp-p cb: fp+920khz 65 72 db video harmonic distortion p/v2 vin = 1mhz , 1vp-p v2: fp+2mhz 45 65 db video type video modulation mp vin = stair step, 1vp-p 75 80 85 % white clip level (max video modulation) wcl vin = stair step, 1.5vp-p 88 93 98 % differential gain dg vin = 10-stair step, 1vp-p -5 5 % differential phase dp vin = 10-stair step, 1vp-p -5 5 deg audio type audio modulation ms ain = 1khz, 1vp-p (note 2) 90 100 110 % maximum audio modulation msmx thd<3% 400 % audio distortion thd ain = 1 khz, 1vp-p 0.4 2 % audio s/n as/n ain = 1 khz, 1vp-p vin = color bar, 1vp-p 45 52 db note 1: 9.5db added to the rfout value measured with a analyzer of the input impedance of 50 . note 2: 100% = 25khz modulation. cautions for use ? set the variable l (between pins 9 and 10) of rfvco so that the rf output frequency becomes 67.25mhz when 2.7 v is applied to v12 (pin 12) in the us4ch mode for the us specifications, 97.25mhz when 2.6v is applied to v12 (pin 12) in the jpn2ch mode for the jpn specifications, and 211.25mhz when 2.5v is applied to v12 (pin 12) in the twn13ch mode for the twn specifications. set the c (pins 9-10) value of rf vco, so that the v12 (pin 12) voltage difference v12 ch between us 4ch and us3ch in the us specification and the v12 (pin 12) voltage difference v12ch between jpn2ch and jpn1ch in the jpn specification becomes v12ch ? 0.25v. (this is necessary because the oscillation frequency during free run (without pll control) of pf vco differs due to the floating capacity of pattern.) ? handle pins 9 and 10 with care to prevent electrostatic br eakdown because their high frequency characteristics are extremely important.
la7161bm/bv no.a0006-3/8 package dimensions block diagram unit: mm 3035b [la7161bm] unit: mm 3178b [LA7161BV]
la7161bm/bv no.a0006-4/8 pin equivalent circuit pin no. symbol voltage e quivalent circuit remarks 1 p/s adj 2.7 capacitor and additionally a resistor may be inserted between the circuit and gnd to attenuate the audio inter-carrier level. 2 audio in 0 fm audio input 3 fm lpf 2.2 control pin of output fm oscillator for the pll phase detector charge pump. 4 gnd 0 5 video in 2.6 video input clamped with sink chip 6 carr off - hi:14pin hi rf operating lo:14pin lo rf stop continued on next page. 1 10k 500 2k 20pf 100k 3k 2 1k 1k 3 2.2v 1k 500 100 5 6 100k 25k 20k
la7161bm/bv no.a0006-5/8 continued from preceding page. pin no. symbol voltage e quivalent circuit remarks 7 in xtal 3.5 4mhz ossilator inserted between the circuit and gnd. external input of the 4mhz signal possible. insertion of about 270k resister between the circuit and gnd ensures compatibility with 3.58mhz of vtr chroma. twn ch selector pininsert a 270k resistor in a circuit to v cc . 8 ch 1.7 ch selector pin jp1:1.2v to 2.3v 0.8 or less 4.2 or more us4:2.7v to 3.8v *twn ch open: ref osc 4mhz gnd: ref osc 3.58mhz 9 osc1 osc2 3.7 rf osillator pin 10 v cc 2 5.0 rf vco typ v cc 11 rf lpf 2.6 control pin of output rf oscillator for the pll phase detector charge pump. 12 v cc 1 5.0 continued on next page. 5pf 100 500 7 33k 17k 5k 8 100 9 10 100 10pf 10pf 3.5k 3.5k 12 1k 2.2v 2.8 v 1k 2k
la7161bm/bv no.a0006-6/8 continued from preceding page. pin no. symbol voltage e quivalent circuit remarks 13 ant drv 3.5 antena driver pin 15ma drive 14 rf out 3.0 rf mixed signal output 15 reg 3.9 regulator output 1k 50k 14 100k 15 1.5k 56.6k 25k 16
la7161bm/bv no.a0006-7/8 test circuit (usch) sample application circuit 1 (us, jpn ch)
la7161bm/bv ps no.a0006-8/8 sample application circuit 2 (twn ch) specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of august, 2004. specifications and information herein are subject to change without notice.
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