document number: 93912 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a GB05XP120KTPBF vishay semiconductors features ? generation 5 npt 1200 v igbt technology ?hexfred ? diode with ultrasoft reverse recovery ? very low conduction and switching losses ? optional smt thermistor (ntc) ? aluminum oxide dbc ? very low stray inductance desi gn for high speed operation ? short circuit 10 s ? square rbsoa ? operating frequencies 8 khz to 60 khz ? ul approved file e78996 ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level benefits ? optimized for inverter motor drive applications ? low emi, requires less snubbing ? direct mounting to heatsink ? pcb solderable terminals ? very low junction to case thermal resistance product summary v ces 1200 v v ce(on) typical at v ge = 15 v 2.90 v i c at t c = 100 c 5 a t sc at t j = 150 c > 10 s mtp absolute maximum ratings parameter symbol test conditions max. units collector to em itter voltage v ces 1200 v continuous coll ector current i c t c = 25 c 12 a t c = 100 c 5 pulsed collector current i cm 24 peak switching current i lm 24 diode continuous forward current i f t c = 100 c 5 peak diode forward current i fm 12 gate to emitter voltage v ge 20 v rms isolation voltage v isol any terminal to case, t = 1 min 2500 maximum power dissipation (including diode and igbt) p d t c = 25 c 76 w t c = 100 c 31
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93912 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB05XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units collector to emitte r breakdown voltage v (br)ces v ge = 0 v, i c = 250 a 1200 - - v temperature coefficient of v (br)ces ? v (br)ces / ? t j v ge = 0 v, i c = 1 ma (25 c to 125 c) - 1.14 - v/c collector to em itter voltage v ce(on) v ge = 15 v, i c = 6 a - 2.90 3.17 v v ge = 15 v, i c = 12 a - 4.04 4.46 v ge = 15 v, i c = 6 a, t j = 125 c - 3.45 3.60 v ge = 15 v, i c = 12 a, t j = 125 c - 5.07 5.32 gate threshold voltage v ge(th) i c = 250 a 4 - 6 temperature coefficient of threshold voltage ? v ge(th) / ? t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c forward transconductance g fe v ce = 25 v, i c = 6 a - 3.2 - s collector to emitte r leaking current i ces v ge = 0 v, v ce = 1200 v - - 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - - 1000 diode forward voltage drop v fm i f = 6 a, v ge = 0 v - 2.33 2.77 v i f = 12 a, v ge = 0 v - 3.01 3.63 i f = 6 a, v ge = 0 v, t j = 125 c - 2.55 2.98 i f = 12 a, v ge = 0 v, t j = 125 c - 3.45 4.07 gate to emitter leakage current i ges v ge = 20 v - - 250 na switching characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units total gate charge (turn-on) q g i c = 6 a v cc = 600 v v ge = 15 v -2741 nc gate to emitter charge (turn-on) q ge -3.75.6 gate to collector charge (turn-on) q gc -1421 turn-on switching loss e on i c = 6 a, v cc = 600 v, v ge = 15 v r g = 10 ? , l = 2.0 mh, t j = 25 c energy losses include tail and diode reverse recovery - 0.606 0.909 mj turn-off switching loss e off - 0.340 0.510 total switching loss e tot - 0.946 1.420 turn-on switching loss e on i c = 6 a, v cc = 600 v, v ge = 15 v r g = 10 ? , l = 2.0 mh, t j = 125 c energy losses include tail and diode reverse recovery - 0.779 1.170 mj turn-off switching loss e off - 0.403 0.605 total switching loss e tot - 1.182 1.775 turn-on delay time t d(on) i c = 6 a, v cc = 600 v, v ge = 15 v l = 2.0 mh, l s = 100 nh r g = 10 ? , t j = 125 c -4771 ns rise time t r -1726 turn-off delay time t d(off) - 99 150 fall time t f - 362 543 reverse bias safe operating area rbsoa t j = 150 c, i c = 24 a r g = 10 ? , v ge = 15 v to 0 fullsquare short circuit safe operating area scsoa v cc = 600 v, v ge = + 15 v to 0 t j = 150 c, v p = 1200 v, r g = 10 ? 10 - - s input capacitance c ies v ge = 0 v v cc = 30 v f = 1 mhz - 369 554 pf output capacitance c oes - 244 366 reverse transfer capacitance c res -1218 diode reverse recovery energy e rec i c = 6 a, v cc = 600 v, v ge = 15 v l = 2.0 mh, l s = 100 nh r g = 10 ? , t j = 125 c - 334 - j diode reverse recovery time t rr -54-ns diode peak reverse current i rr -17- a
document number: 93912 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 GB05XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a vishay semiconductors notes (1) t 0 , t 1 are thermistors temperatures (2) fig. 1 - typical output characteristics t j = 25 c fig. 2 - typical output characteristics t j = 125 c thermistor specifications (t code only) parameter symbol test cond itions min. typ. max. units resistance r 0 (1) t 0 = 25 c - 30 - k ? sensitivity index of the thermistor material ? (1)(2) t 0 = 25 c t 1 = 85 c - 4000 - k r 0 r 1 ------ - ? 1 t 0 ------ 1 t 1 ------ ? ?? ?? exp = thermal and mechanical specifications parameter symbol test conditions min. typ. max. units operating junction temperature range t j - 40 - 150 c storage temperature range t stg - 40 - 125 junction to case igbt r thjc - - 2.68 c/w diode --4.2 case to sink per module r thcs heatsink compound thermal conductivity = 1 w/mk - 0.06 - mounting torque --4nm weight -65- g 0246 0 5 10 15 20 vge=18v vge=15v vge=12v vge=10v vge=8v ice (a) vce (v) 0246810 0 5 10 15 20 vge=18v vge=15v vge=12v vge=10v vge=8v vce (v) ice (a)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93912 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB05XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a fig. 3 - typical v ce vs. v ge t j = 25 c fig. 4 - typical v ce vs. v ge t j = 125 c fig. 5 - typical energy loss vs. i c t j = 125 c, l = 2 mh, v ce = 600 v r g = 10 ? ; v ge = 15 v fig. 6 - typical switching time vs. i c t j = 125 c, l = 2 mh, v ce = 600 v r g = 10 ? ; v ge = 15 v fig. 7 - typical energy loss vs. r g t j = 125 c, l = 2 mh, v ce = 600 v i c = 6 a; v ge = 15 v fig. 8 - typical switching time vs. r g t j = 125 c, l = 2 mh, v ce = 600 v i c = 6 a; v ge = 15 v 5101520 0 5 10 15 20 i ce=3a i ce=6a i ce=12a vge (v) vce (v) 5101520 0 5 10 15 20 i ce=3a i ce=6a i ce=12a vge (v) vce (v) ic (a) energy (mj) 36912 0 500 1000 1500 2000 2500 e tot e on e off 36912 1 10 100 1000 ic (a) swiching time (ns) t f td off td on t r rg ( ) energy (mj) 0 1020304050 200 500 800 1100 1400 e tot e off e on 0 1020304050 10 100 1000 rg ( ) swiching time (ns) t f td off td on t r
document number: 93912 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 GB05XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a vishay semiconductors fig. 9 - typical capacitance vs. v ce v ge = 0 v; f = 1 mhz fig. 10 - typical gate charge vs. v ge i ce = 5 a fig. 11 - maximum dc collector current vs. case temperature fig. 12 - power dissipation vs. case temperature (igbt only) fig. 13 - forward soa t c = 25 c, t j ?? 150 c fig. 14 - reverse bias soa t j = 150 c, v ge = 15 v 010203040 10 100 1000 vce (v) capacitance (pf) cies coes cres q g , total gate charge (nc) 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 600v v ge (v) 04080120160 0 3 6 9 12 15 ic (a) tc (c) 04080120160 0 10 20 30 40 50 tc (c) ptot (w) 1 10 100 1000 10000 0.01 0.1 1 10 100 vce (v) ic (a) 20 s 100 s 1 ms dc 10 100 1000 10000 1 10 100 vce (v) ic (a)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93912 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB05XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a fig. 15 - typical transfer characteristics v ce = 50 v; t p = 10 s fig. 16 - typical diode forward characteristics t p = 80 s fig. 17 - typical diode i rr vs. i f t j = 125 c fig. 18 - typical diode i rr vs. r g t j = 125 c; i f = 10 a fig. 19 - typical diode i rr vs. di f /dt; v cc = 600 v; v ge = 15 v; i ce = 10 a, t j = 125 c 0481216 0 10 20 30 40 50 vge (v) ice (a) tj = 25c tj = 125c 012345 0 5 10 15 20 vf (v) if (a) tj = 25c tj = 125c 2 4 6 8 10 12 14 16 6 11 16 21 26 if (a) irr (a) rg=4.7 rg= 10 rg= 22 rg=47 rg ( ) irr (a) 300360420480 9 11 13 15 17 19 dif/dt (a/s) irr (a)
document number: 93912 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 03-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 7 GB05XP120KTPBF three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a vishay semiconductors fig. 20 - maximum transient thermal impedance, junction to case (igbt) fig. 21 - maximum transient thermal impedance, junction to case (diode) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 0.660 0.536 1.483 i (sec) 0.00037 0.001664 0.037405 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 0.01 0.1 1 10 single pulse (thermal response) 0.5 0.3 0.1 0.05 0.02 0.01 ri (c/w) 1.684 1.683 0.833 i (sec) 0.001077 0.020815 0.040397 notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc t1 , rectangular pulse duration (sec) thermal response (zth jc ) 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93912 8 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 03-aug-10 GB05XP120KTPBF vishay semiconductors three phase inverter module in mtp package 1200 v npt igbt and hexfred ? diodes, 5 a ordering information table circuit configuration 1 - igbt module 2 - nominal current rating (05 = 5 a) 3 - circuit configuration (xp = sixpack mtp package) 4 - voltage code (120 = 1200 v) 5 - speed/type (k = ultrafast igbt/inverter motor drive application) 6 - special option: none = no special option t = thermistor 7 - pbf = lead (pb)-free device code 5 13 24 67 gb 05 xp 120 k t pbf 13 7 1 2 8 9 5 6 10 3 4 11 12 links to related documents dimensions www.vishay.com/doc?95175
document number: 95175 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 18-mar-08 1 mtp outline dimensions vishay semiconductors dimensions in millimeters note ? unused terminals are not assembled in the package ? 1.1 ? 5 3.5 33 31.8 12 0.5 4 20.5 2.5 87 6 543 2 1 13 9 10 11 12 1.8 8.1 45 5.4 0.1 5.7 0.1 1.2 0.1 7.2 0.1 7.8 0.1 3 0.1 27.5 11.35 0.1 11.35 0.1 r2.6 (x 3) r5.8 (x 2) 8.7 0.1 6 0.1 3 0.1 8.5 0.1 39.5 0.1 44.5 48.7 63.5 0.25 1.3
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