click to buy information furnished by linear integrated systems and micross components is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of linear integrated systems. features ? tight ? matching ?? 5mv ? thermal ? tracking ?? 5v ? / ? c absolute ? maximum ? ratings ? 1 ? @ ? 25c ? (unless ? otherwise ? noted) ? maximum ? temperatures ? storage ? temperature ?\ 65c ? to ? +150c ? operating ? junction ? temperature ?\ 55c ? to ? +150c ? maximum ? power ? dissipation ? continuous ? power ? dissipation ?? tbd ? maximum ? currents ? collector ? current ? 50ma ? maximum ? voltages ? collector ? to ? collector ? voltage ? 80v ? ?? matching ? characteristics ? @ ? 25c ? (unless ? otherwise ? stated) ? symbol ? characteristic ? min ? typ ? max ? units ? conditions ? |v be1 ? ? ? v be2 ? | ? base ? emitter ? voltage ? differential ? \\? \\ ? 5 ? mv ? i c ? = ? 10ma, ? v ce ? = ? 5v ? ? |(v be1 ? ? ? v be2 )| ? / ?? t ? ? base ? emitter ? voltage ? differential ? change ? with ? temperature ? \\? \? 5 ? v/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 40c ? to ? +85c ? |i b1 ? ? ? i b2 ? | ? base ? current ? differential ? \\? \\? 10 ? na ? i c ? = ? 10a, ? v ce ? = ? 5v ? | ?? (i b1 ? ? ? i b2 )|/ ?? t ? base ? current ? differential ? ? change ? with ? temperature ? \\? \\? 0.5 ? na/c ? i c ? = ? 10a, ? v ce ? = ? 5v ? t a ? = ?\ 40c ? to ? +85c ? h fe1 ? /h fe2 ? dc ? current ? gain ? differential ? \\? \\? 10 ? % ? i c ? = ? 10a, ? v ce ? = ? 5v ? ? electrical ? characteristics ? @ ? 25c ? (unless ? otherwise ? noted) symbol ? characteristics ? min. ? typ. ? max. ? units ? conditions ? bv cbo ? collector ? to ? base ? voltage ? 40 ? \\? \\? v ? i c ? = ? 10ma, ? i e ? = ? 0 ? bv ceo ? collector ? to ? emitter ? voltage ? 40 ? \\? \\? v ? i c ? = ? 10a, ? i b ? = ? 0 ? bv ebo 2 ? emitter \ base ? breakdown ? voltage ? 6.2 ? \\? \\? v ? i e ? = ? 10a, ? i c ? = ? 0 ? bv cco ? collector ? to ? collector ? voltage ? 80 ? \\? \\? v ? i c ? = ? 10a, ? i e ? = ? 0 ? ? h fe ? ? dc ? current ? gain ? 100 ? \\? \\? ? i c ? = ? 10a, ? v ce ? = ? 5v ? 80 ? \\? \\? ? i c ? = ? 100a, ? v ce ? = ? 5v ? 80 ? \\? \\? ? i c ? = ? 1ma, ? v ce ? = ? 5v ? v ce (sat) ? collector ? saturation ? voltage ? \\? \\? 0.25 ? v ? i c ? = ? 100ma, ? i b ? = ? 10ma ? i ebo ? emitter ? cutoff ? current ? \\? \\? 0.2 ? na ? i c ? = ? 0a, ? v cb ? = ? 3v ? i cbo ? collector ? cutoff ? current ? \\? \\? 0.2 ? na ? i e ? = ? 0a, ? v cb ? = ? 20v ? c obo ? output ? capacitance ? \\? \\? 2 ? pf ? i e ? = ? 0a, ? v cb ? = ? 10v ? i c1c2 ? collector ? to ? collector ? leakage ? current ? \\? \\? 1 ? na ? v cc ? = ? 80v ? f t ? current ? gain ? bandwidth ? product ? \\? \\? 600 ? mhz ? i c ? = ? 1ma, ? v ce ? = ? 5v ? nf ? narrow ? band ? noise ? figure ? \\? \\? 3 ? db ? i c ? = ? 100a, ?? v ce ? = ? 5v, ? bw=200hz, ? r b = ? 10 , ?? f ? = ? 1khz ? notes: ? 1. ? absolute ? maximum ? ratings ? are ? limiting ? values ? above ? which ? serviceability ? may ? be ? impaired 2. ? the ? reverse ? base \ to \ emitter ? voltage ? must ? never ? exceed ? 6.2 ? volts; ? the ? reverse ? base \ to \ emitter ? current ? must ? never ? exceed ? 10a. ? ? ? ? ? ls3250b monolithic dual npn transistor ls3250b features: ? tight matching ? low output capacitance the ls3250b is a monolithic pair of npn transistors mounted in a single p-dip package. the monolithic dual chip design reduces parasitics and is ideal for use in tracking applications. the 8 pin p-dip provides ease of manufacturing, and the symmetrical pinout prev ents improper orientation. (see packaging information). linear s y stems lo g conformance monolithic dual npn available packages: ls3250b in p-dip ls3250b available as bare die please contact micross for fu ll package and die dimensions: email: chipcomponents@micross.com web: www.micross.com/distribution.aspx p-dip (top view)
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