document number: 94392 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-sep-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 phase control thyristors (stud version), 80 a 80ria...pbf, 81ria...pbf, 82ria...pbf series vishay semiconductors features ? hermetic glass-metal seal ? international standard case to-209ac (to-94) ? compliant to rohs directive 2002/95/ec ? designed and qualified for industrial level typical applications ? dc motor controls ? controlled dc power supplies ? ac controllers electrical specifications product summary i t(av) 80 a to-209ac (to-94) major ratings and characteristics parameter test conditions values units i t(av) 80 a t c 85 c i t(rms) 125 a i tsm 50 hz 1900 60 hz 1990 i 2 t 50 hz 18 ka 2 s 60 hz 16 v drm /v rrm 400 to 1200 v t q typical 110 s t j - 40 to 125 c voltage ratings type number voltage code v drm /v rrm , maximum repetitive peak and off-state voltage v v rsm , maximum non-repetitive peak voltage v i drm /i rrm maximum at t j = 125 c ma 80ria 81ria 40 400 500 15 80 800 900 120 1200 1300
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94392 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-sep-10 80ria...pbf, 81ria...pbf, 82ria...pbf series vishay semiconductors phase control thyristors (stud version), 80 a absolute maximum ratings parameter symbol test conditions values units maximum average on-state current at case temperature i t(av) 180 conduction, half sine wave 80 a 85 c maximum rms on-state current i t(rms) dc at 75 c case temperature 125 a maximum peak, one-cycle non-repetitive surge current i tsm t = 10 ms no voltage reapplied sinusoidal half wave, initial t j = t j maximum 1900 t = 8.3 ms 1990 t = 10 ms 100 % v rrm reapplied 1600 t = 8.3 ms 1675 maximum i 2 t for fusing i 2 t t = 10 ms no voltage 18 ka 2 s t = 8.3 ms 16 t = 10 ms 100 % v rrm reapplied 12.7 t = 8.3 ms 11.7 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 180.5 ka 2 ? s low level value of threshold voltage v t(to)1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 0.99 v high level value of threshold voltage v t(to)2 (i > ? x i t(av) ), t j = t j maximum 1.13 low level value of on-state slope resistance r t1 (16.7 % x ? x i t(av) < i < ? x i t(av) ), t j = t j maximum 2.29 m ? high level value of on-state slope resistance r t2 (i > ? x i t(av) ), t j = t j maximum 1.84 maximum on-state voltage v tm i pk = 250 a, t j = 25 c, t p = 10 ms sine pulse 1.60 v maximum holding current i h t j = 25 c, anode supply 12 v resistive load 200 ma typical latching current i l 400 switching parameter symbol test conditions values units maximum non-repe titive rate of rise of turned-on current di/dt t j = 125 c, v d = rated v drm , i tm = 2 x di/dt snubber 0.2 f, 15 ? , gate pulse: 20 v, 65 ? , t p = 6 s, t r = 0.5 s per jedec standard rs-397, 5.2.2.6. 300 a/s typical delay time t d gate pulse: 10 v, 15 ? source, t p = 6 s, t r = 0.1 s, v d = rated v drm , i tm = 50 adc, t j = 25 c 1 s typical turn-off time t q i tm = 50 a, t j = t j maximum, di/dt = - 5 a/s, v r = 50 v, dv/dt = 20 v/s, gate bias: 0 v 25 ? , t p = 500 s 110 blocking parameter symbol test conditions values units maximum critical rate of rise of off-state voltage dv/dt t j = 125 c exponential to 67 % rated v drm 500 v/s maximum peak reverse and off-state leakage current i rrm , i drm t j = 125 c rated v drm /v rrm applied 15 ma
document number: 94392 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-sep-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 80ria...pbf, 81ria...pbf, 82ria...pbf series phase control thyristors (stud version), 80 a vishay semiconductors triggering parameter symbol test co nditions values units maximum peak gate power p gm t j = t j maximum, t p ? 5 ms 12 w maximum average gate power p g(av) t j = t j maximum, f = 50 hz, d% = 50 3 maximum peak positi ve gate current i gm t j = t j maximum, t p ? 5 ms 3a maximum peak positive gate voltage + v gm 20 v maximum peak negative gate voltage - v gm 10 maximum dc gate curren t required to trigger i gt t j = - 40 c maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 6 v anode to cathode applied 270 ma t j = 25 c 120 t j = 125 c 60 maximum dc gate voltag e required to trigger v gt t j = - 40 c 3.5 v t j = 25 c 2.5 t j = 125 c 1.5 dc gate current not to trigger i gd t j = t j maximum maximum gate curren t/voltage not to trigger is the ma ximum value which will not trigger an y unit with rated v drm anode to cathode applied 6ma dc gate voltage not to trigger v gd 0.25 v thermal and mechanical specifications parameter symbol test conditions values units maximum operating junction temperature range t j - 40 to 125 c maximum storage temperature range t stg - 40 to 150 maximum thermal resistance, junction to case r thjc dc operation 0.30 k/w maximum thermal resistance, case to heatsink r thcs mounting surface, smooth, flat and greased 0.1 mounting torque, 10 % non-lubricated threads 15.5 (137) n m (lbf in) lubricated threads 14 (120) approximate weight 130 g case style see dimensions - link at the end of datasheet to-209ac (to-94)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94392 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-sep-10 80ria...pbf, 81ria...pbf, 82ria...pbf series vishay semiconductors phase control thyristors (stud version), 80 a note ? the table above shows the increment of thermal resistance r thjc when devices operate at different conduction angles than dc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics fig. 3 - on-state po wer loss characteristics ? r thjc conduction conduction angle sinusoidal conduction rectangular conduction test conditions units 180 0.042 0.030 t j = t j maximum k/w 120 0.050 0.052 90 0.064 0.070 60 0.095 0.100 30 0.164 0.165 80 90 100 110 120 130 0 102030405060708090 maximum allowable case temperature (c) 30 60 90 120 180 average on-state current (a) conduc tion angle 80ria series r (dc) = 0.30 k/w thjc 70 80 90 100 110 120 130 020406080100120140 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature (c) conduction period 80ria series r (dc) = 0.30 k/w thjc 0255075100125 maximum allowable ambient temperature (c) 0 . 6 k / w 1 k / w 2 k / w 5 k / w 3 k / w 1 . 4 k / w r = 0 . 4k / w - d e l t a r t h s a 0 10 20 30 40 50 60 70 80 90 100 110 120 0 10 20 30 40 50 60 70 80 180 120 90 60 30 rm s li m i t conduction angle maximum average on-st ate pow er loss (w) average on-state current (a) 80ria series t = 125c j
document number: 94392 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 17-sep-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 80ria...pbf, 81ria...pbf, 82ria...pbf series phase control thyristors (stud version), 80 a vishay semiconductors fig. 4 - on-state power loss characteristics fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current fig. 7 - on-state volt age drop characteristics 0255075100125 maximum allowable ambient temperature (c) r = 0 . 4 k / w - d e l t a r t h s a 0 . 6 k / w 1 k / w 1 . 4 k / w 2 k / w 3 k / w 5 k / w 0 20 40 60 80 100 120 140 160 180 0 20406080100120140 dc 180 120 90 60 30 rm s li m i t conduction period maximum average on-state power loss (w) average on-state current (a) 80ria serie s t = 125c j 800 1000 1200 1400 1600 1800 110100 number of eq ua l amp litud e half cyc le current pulses (n) peak half sine wave on-state current (a) at 60 hz 0.0083 s at 50 hz 0.0100 s 80ria series at any rated load condition and with rated v applied following surge. rrm initial t j = 125c 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 0.01 0.1 1 pu lse tra in du ra t io n ( s) versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125c no voltage reapplied rated v reapplied rrm j 80ria series maximum non repetitive surge current 1 10 100 1000 10000 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 25c j instantaneous on-state current (a) in st a n t a n e o u s o n - st a t e v o lt a g e ( v ) t = 125c j 80ria series
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94392 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 17-sep-10 80ria...pbf, 81ria...pbf, 82ria...pbf series vishay semiconductors phase control thyristors (stud version), 80 a fig. 8 - thermal impedance z thjc characteristics fig. 9 - gate characteristics ordering information table links to related documents dimensions www.vishay.com/doc?95362 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 sq uare wave pulse duration (s) thjc 80ria series steady state value r = 0.30 k/w (dc operation) transient thermal impedance z (k/w) thjc 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) rectangular gate pulse a) recommended load line for b) recommended load line for frequency limited by pg(av) tr<=1 s rated di/dt : 20v, 30ohms; tr<=0.5 s <=30% rated di/dt : 20v, 65ohms (1) pgm = 100w, tp = 500s (2) pgm = 50w, tp = 1ms (3) pgm = 20w, tp = 2.5ms (4) pgm = 10w, tp = 5ms device: 80ria series (4) 1 -i tav x 10 a 3 - ria = essential part number 4 6 - lead (pb)-free - voltage code x 100 = v rrm (see voltage ratings table) 5 - none = stud base 1/2"-20unf- 2 a threads m = stud base metric threads m12 x 1.75 e 6 2 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast-on terminals (gate and auxiliary cathode leads) 2 = flag terminals (gate and auxiliary cathode terminals) device code 5 1 3 2 4 6 8 0 ria 120 m pbf
document number: 95362 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 17-sep-10 1 to-209ac (to-94) for 80ria series outline dimensions vishay semiconductors dimensions in millimeters (inches) fast-on terminals c.s. 0.4 mm 2 white shrink red shrink red cathode red silicon rubber ? 4.3 (0.17) 10.0 (0.39) max. (0.0006 s.i.) glass metal seal ? 8.5 (0.33) 16.5 (0.65) max. ? 23.5 (0.92) max. c.s. 16 mm 2 (0.025 s.i.) flexible lead 2.5 (0.10) max. 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9.5 (0.37 ) min. white gate amp. 280000-1 ref-250 20 (0.79) min. 24 (0.94) max. 21 (0.83) max. 157 (6.18) 170 (6.69) 55 (2.17) min. 215 10 (8.46 0.39)
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